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US 11,932,715 B2Granted
Hardmask composition and method of forming patterns
AssigneeSamsung SDI Co., Ltd.
InventorsDonghoon Won, Yongsik Yoo, Hyunsoo Lee, Seil Choi, Huiseon Choe
Life of this patent
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Abstract
A hardmask composition and a method of forming patterns using the hardmask composition, the composition including a polymer including a moiety derived from a compound represented by Chemical Formula 1; and a solvent:
Claims17
A hardmask composition, comprising:
- a polymer including a moiety derived from a compound represented by Chemical Formula 2;
- and
- a solvent,
- wherein, in Chemical Formula 2,
- X3 to X3 are each independently N or CRa, in which Ra is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C2 to C40 heterocycle,
- B1 to B6 are each independently a C6 to C30 aromatic ring,
- L1 to L3 are each independently a single bond, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof,
- R1 to R3 are each independently a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C2 to C30 heterocyclic group, or a combination thereof,
- m1 to m6 are each independently 0 or 1, and
- n1 to n3 are each independently an integer of 0 to 4.
7 more elements
Dependencies are inferred from the claim text.