Magnetic memory device using doped semiconductor layer
AssigneeNorthwestern University
InventorsPedram Khalili Amiri, Manijeh Razeghi
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Abstract
Magnetic memory devices are provided. The devices comprise a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer composed of a doped semiconductor (instead of an insulator or a dielectric) between the first and second ferromagnetic layers and forming at least one ferromagnetic-doped semiconductor interface.
Claims20
A magnetic memory device comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer composed of a doped semiconductor between the first and second ferromagnetic layers and forming at least one ferromagnetic-doped semiconductor interface, wherein the doped semiconductor is characterized by a carrier concentration of at least 1015 cm−3.
A magnetic memory device comprising a first ferromagnetic layer composed of CoFeB, a second ferromagnetic layer composed of CoFeB, and a tunnel barrier layer composed of a doped semiconductor between the first and second ferromagnetic layers and forming at least one ferromagnetic-doped semiconductor interface, wherein the doped semiconductor is n-type Si-doped Ga2O3 or p-type Si-doped Ga2O3.
Dependencies are inferred from the claim text.