# US 11,930,255 B2 · Color and infrared image sensor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,930,255 B2 - Document ID: US11930255B2 - Status: Granted - Kind: B2 - Application number: 17/435,339 - Filed: 2020-02-21 - Published: 2022-05-05 - Granted: 2024-03-12 - Earliest claimed: 2019-03-01 - Assignees: Isorg - Applicants: Isorg - Inventors: Camille Dupoiron; Benjamin Bouthinon - Web page: https://patentgrep.com/patent/US11930255B2 ## CPC - H10F 39/192: {Colour image sensors} - H10K 39/32: Organic image sensors - H04N 25/131: including elements passing infrared wavelengths - H04N 25/17: Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location - H04N 25/65: applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H04N 25/778: comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H10F 39/8053: {Colour filters} - H10F 39/8063: {Microlenses} - H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION ## Abstract A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate and on the substrate, first photodiodes at least partly formed in the substrate, a photosensitive layer covering the substrate, and color filters, the photosensitive layer being interposed between the substrate and the color filters. The image sensor further includes first and second electrodes on either side of the photosensitive layer and delimiting second photodiodes in the photosensitive layer, the first photodiodes being configured to absorb the electromagnetic waves of the visible spectrum and of a first portion of the infrared spectrum and the photosensitive layer being configured to absorb the electromagnetic waves of the visible spectrum and to give way to the electromagnetic waves of said first portion of the infrared spectrum. ## Claims ### Claim 1 A color and infrared image sensor comprising a silicon substrate, MOS transistors formed in the substrate and on the substrate, first photodiodes at least partly formed in the substrate, a photosensitive layer covering the substrate, and color filters, the photosensitive layer being interposed between the substrate and the color filters, the image sensor further comprising first and second electrodes on either side of the photosensitive layer and delimiting second photodiodes in the photosensitive layer, the first photodiodes being configured to absorb the electromagnetic waves of the visible spectrum and of a first portion of the infrared spectrum and the photosensitive layer being configured to absorb the electromagnetic waves of the visible spectrum and to give way to the electromagnetic waves of said first portion of the infrared spectrum, the image sensor comprising, for each pixel of the color image to be acquired, at least first, second, and third sub-pixels each comprising one of the second photodiodes, one of the first photodiodes, and one of the color filters, the color filters of the first, second, and third sub-pixels giving way to electromagnetic waves in different frequency ranges of the visible spectrum, the image sensor comprising, for each pixel of the color image to be acquired, at least one fourth sub-pixel comprising one of the second photodiodes and one of the color filters, the color filter of the fourth sub-pixel being configured to block the electromagnetic waves of the visible spectrum and to give way to electromagnetic waves in a third portion of the infrared spectrum between the visible spectrum and the first portion of the infrared spectrum, the photosensitive layer being configured to absorb electromagnetic waves in said third portion of the infrared spectrum. ### Claim 2 (depends on 1) The image sensor according to claim 1, further comprising an infrared filter, the color filters being interposed between the photosensitive layer and the infrared filter, the infrared filter being configured to give way to the electromagnetic waves of the visible spectrum, to give way to the electromagnetic waves of said first portion of the infrared spectrum, and to block the electromagnetic waves of at least a second portion of the infrared spectrum between the visible spectrum and the first portion of the infrared spectrum. ### Claim 3 (depends on 2) The image sensor according to claim 2, further comprising an array of lenses interposed between the photosensitive layer and the infrared filter. ### Claim 4 (depends on 1) The image sensor according to claim 1, wherein, for each pixel of the color image to be acquired, the second electrode is common to the first, second, and third sub-pixels. ### Claim 5 (depends on 1) The image sensor according to claim 1, further comprising, for each first, second, and third sub-pixels, a readout circuit coupled to the second photodiode and to the first photodiode. ### Claim 6 (depends on 5) The image sensor according to claim 5, wherein the readout circuit is configured to transfer first electric charges generated in the first photodiode to a first electrically-conductive track and configured to transfer second charges generated in the second photodiode to the first electrically-conductive track or a second electrically-conductive track. ### Claim 7 (depends on 6) The image sensor according to claim 6, wherein the first photodiodes are arranged in rows and in columns and wherein the readout circuits are configured to control the generation of the first charges during first time intervals simultaneous for all the first photodiodes of the image sensor. ### Claim 8 (depends on 6) The image sensor according to claim 6, wherein the second photodiodes are arranged in rows and in columns and wherein the readout circuits are configured to control the generation of the second charges during second time intervals simultaneous for all the second photodiodes of the image sensor or shifted in time from one row of second photodiodes to another. ### Claim 9 (depends on 6) The image sensor according to claim 6, wherein the readout circuits are configured to control a first integration phase for the first photodiodes having a first duration and to control a second integration phase for the second photodiodes having a second duration different from the first duration. ### Claim 10 (depends on 6) The image sensor according to claim 6, wherein each readout circuit comprises at least one first follower-assembled MOS transistor, the second photodiode having a first electrode directly coupled to the gate of the first MOS transistor and the second photodiode having a second electrode coupled to the gate of the first MOS transistor, or to the gate of a second follower-assembled MOS transistor, via a third MOS transistor. ### Claim 11 (depends on 1) The image sensor according to claim 1, wherein the photosensitive layer is made of organic materials and/or contains quantum dots.