High-intensity light source with high CRI

A light generating device, wherein:

• the light generating device comprises:
• (a) a first light source configured to generate first light source light having a first light source light spectral power distribution, wherein the first light source comprises a first laser light source configured to generate first laser light source light;
• (b) a first luminescent material configured to convert at least part of the first light source light into first luminescent material light having a first luminescent material spectral power distribution having an emission at one or more wavelengths selected from the wavelength range of 590-780 nm, wherein the first luminescent material is configured in an optical resonator;
• (c) a second light source configured to generate second light source light having a second light source light spectral power distribution, wherein the second light source comprises a second laser light source configured to generate second laser light source light;
• and (d) a second luminescent material configured to convert at least part of one or more of (i) the first laser light source light and (ii) the second laser light source light to provide second luminescent material light;
• the first light source and the first luminescent material are configured to generate first luminescent material laser light having a first luminescent material laser light spectral power distribution comprising at least part of the first luminescent material light;
• the first light source light spectral power distribution and the first luminescent material laser light spectral power distribution mutually differ;
• the light generating device is configured to generate in one or more operational modes white device light comprising the first luminescent material laser light and the second luminescent material light;
• and wherein the second luminescent material comprises (Yx1-x2-x3Ax2Cex3)3(Aly1-y2By2)5O12, wherein x1+x2+x3=1, wherein x3>0, wherein 0<x2+x3≤0.2, wherein y1+y2=1, wherein 0≤y2≤0.2, wherein A comprises one or more elements selected from the group consisting of lanthanides and scandium, and wherein B comprises one or more elements selected from the group consisting of Ga and In, wherein at maximum 10% of Al-O may be replaced by Si-N.