Synthesis of anthracitic networks and ambient superconductors

A process for forming perimorphic frameworks, the process comprising:

• I. Forming a perimorphic wall around each template particle in a population of template particles, the forming of the perimorphic wall comprising:
• over a templating surface of a template particle, in the presence of a vapor comprising radicals, at a first temperature of at least 400° C.:
• growing graphenic structures via radical addition at edges of the graphenic structures;
• and
• at interfaces between the edges of graphenic structures, grafting the edges covalently by forming sp2-sp2 and sp3-sp3 bonds between them, the grafting of the graphenic structures coalescing them into a larger, coalesced graphenic layer generally encapsulating the templating surface and comprising both sp2- and sp3-hybridized states;
• and
• nucleating higher-layer graphenic regions above the coalesced graphenic layer, the higher-layer graphenic regions nematically aligned with the coalesced graphenic layer and growing via radical addition at their edges, the coalesced graphenic layer and higher-layer graphenic regions covalently connected and together comprising the perimorphic wall, the perimorphic wall rendering the template particle endomorphic and together with it comprising a perimorphic composite particle;
• and
• II. Exposing the perimorphic composite particles to a liquid to remove the endomorphic template particles from the perimorphic walls, the removing of the template particles forming perimorphic frameworks having a BET specific surface of at most 2,300 m2g−1 and an X-ray diffraction pattern with an unfitted peak in the 2θ range of 20° to 28°, each of the perimorphic frameworks a particle having a templated pore-and-wall architecture;
• and
• III. Heating the perimorphic frameworks to a second temperature, the second temperature higher than the first temperature and at least 800° C., to induce sp3-to-sp2 rehybridization in the perimorphic wall.