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US 11,923,837 B2Granted
Load switch including back-to-back connected transistors
AssigneeNuVolta Technologies (Hefei) Co., Ltd.
InventorsJohn Lin, Jinbiao Huang
Life of this patent
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Abstract
An apparatus includes a first drain/source region and a second drain/source region over a substrate, and a first gate adjacent to the first drain/source region and a second gate adjacent to the second drain/source region, wherein the first gate and the second gate are separated from each other, wherein the first drain/source region, the second drain/source region, the first gate and the second gate form two back-to-back connected transistors.
Claims10
An apparatus comprising:
- a first drain/source region and a second drain/source region over a substrate;
- a first gate adjacent to the first drain/source region and a second gate adjacent to the second drain/source region, wherein the first gate and the second gate are separated from each other, and bottommost surfaces of the first gate and the second gate are over a top surface of the substrate, and wherein the first drain/source region, the second drain/source region, the first gate and the second gate form two back-to-back connected transistors;
- a high voltage oxide region, wherein from a top view, a first edge of the high voltage oxide region is aligned with a middle line of the first gate, and a second edge of the high voltage oxide region is aligned with a middle line of the second gate;
- and
- an active region formed between the first drain/source region and the second drain/source region, wherein from the top view, the active region is orthogonal to the high voltage oxide region.
2 more elements
A load switch comprising:
- a first transistor;
- and
- a second transistor being back-to-back connected to the first transistor, wherein:
- a source of the first transistor and a source of the second transistor are formed over a substrate;
- a gate of the first transistor is adjacent to the source of the first transistor;
- a gate of the second transistor is adjacent to the source of the second transistor, wherein the gate of the first transistor and the gate of the second transistor are separated from each other, and wherein bottommost surfaces of the gate of the first transistor and the gate of the second transistor are over a top surface of the substrate;
- a high voltage oxide region, wherein from a top view, a first edge of the high voltage oxide region is aligned with a middle line of the gate of the first transistor, and a second edge of the high voltage oxide region is aligned with a middle line of the gate of the second transistor;
- and
- an active region formed between the source of the first transistor and the source of the second transistor, wherein from the top view, the active region is orthogonal to the high voltage oxide region.
6 more elements
Dependencies are inferred from the claim text.