Apparatus and method for metal contamination control in an ion implantation system using charge stripping mechanism

An ion implantation system, comprising:

• an ion source comprising arc chamber, the arc chamber having a trace amount of a contaminant species contained therein, wherein the contaminant species comprises titanium, and wherein the ion source is configured to generate arsenic ions at a first charge state of 3+ and trace metal ions of the contaminant species within the arc chamber, wherein a charge-to-mass ratio of the arsenic ions and the trace metal ions is equal;
• an extraction apparatus configured to extract the arsenic ions and the trace metal ions from the ion source to define a first ion beam;
• a mass analyzer configured to select the arsenic ions and the trace metal ions from the first ion beam, thereby defining a mass analyzed ion beam;
• an accelerator configured to accelerate the mass analyzed ion beam from a first energy to a second energy;
• a charge stripper configured to strip at least one electron from the arsenic ions, thereby defining a second ion beam comprising the arsenic ions at a second charge state and the trace metal ions;
• and
• a charge selector positioned downstream of the charge stripping apparatus, wherein the charge selector is configured to selectively pass only the arsenic ions at the second charge state therethrough, thereby defining a final ion beam comprising the arsenic ions at the second charge state and approximately zero trace metal ions.