Device and method for measuring thermal load caused by energy transfer upconversion in laser gain crystal
AssigneeShanxi University
InventorsJing Su, Huiqi Yang, Huadong Lu, Kunchi Peng
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AssigneeShanxi University
InventorsJing Su, Huiqi Yang, Huadong Lu, Kunchi Peng
Estimating the term…
A device and a method for measuring a thermal load caused by energy transfer upconversion in a laser gain crystal. Increasing the pump power multiple times so that the power meter obtains multiple thresholds for a single-frequency laser; obtaining an average pump threshold of the output laser; obtaining cavity parameters of the single-frequency laser; obtaining thermal focal lengths on the tangential and sagittal planes of the laser gain crystal inside the single-frequency laser; obtaining individual ABCD matrices of the laser system on the tangential and the sagittal planes; obtaining a thermal load at the threshold based on the ABCD transfer matrix of the laser gain crystal on the tangential plane, the ABCD transfer matrix of the laser gain crystal on the sagittal plane, and the average pump threshold of the laser system; obtaining a thermal load caused by ETU at threshold based on the thermal load at the threshold.
A method for measuring a thermal load caused by ETU in a laser gain crystal, wherein the method uses a device for measuring a thermal load caused by ETU in a laser gain crystal, and the device comprises a single-frequency laser and a power meter, wherein an output from the single-frequency laser is injected into the power meter, and an output power of the single-frequency laser be measured by the power meter;
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