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US 11,916,135 B2Granted
Bipolar transistor
AssigneeGlobalFoundries U.S. Inc.
InventorsViorel Ontalus, Justin C. Long, Robert K. Baiocco
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor and methods of manufacture. The structure includes: a collector region in a semiconductor substrate; a base region adjacent to the collector region; and an emitter extending above the base region and comprising semiconductor material and a hardmask surrounding a lower portion of the semiconductor material.
Claims20
A structure comprising:
- a collector region in a semiconductor substrate;
- a base region adjacent to the collector region;
- an emitter extending above the base region and comprising semiconductor material and hardmask material surrounding a lower portion of the semiconductor material and at a top surface of the semiconductor material of the emitter;
- a sidewall spacer surrounding the semiconductor material of the emitter and the hardmask material at both the lower portion and the top surface;
- and
- interlevel dielectric material over the hardmask material and the sidewall spacer.
3 more elements
A structure comprising:
- a collector region in a semiconductor substrate;
- a base region adjacent to the collector region;
- and
- a vertical emitter extending above the base region and comprising a stepped region with a reduced cross-sectional area at a lower portion and which contacts the base region;
- a sidewall spacer extending along a height of the sidewall of the vertical emitter to a top surface thereof;
- and
- interlevel dielectric material over the sidewall spacer along the height of the sidewall to the top surface and over the vertical emitter.
4 more elements
A method comprising:
- forming a collector region in a semiconductor substrate;
- forming a base region adjacent to the collector region;
- and
- forming an emitter extending above the base region and comprising semiconductor material and hardmask material surrounding a lower portion of the semiconductor material and at a top surface of the semiconductor material of the emitter;
- forming a sidewall spacer surrounding the semiconductor material of the emitter and the hardmask material at both the lower portion and the top surface;
- and
- forming interlevel dielectric material over the hardmask material and the sidewall spacer.
4 more elements
Dependencies are inferred from the claim text.