Method for fabricating semiconductor device with programmable unit
AssigneeNanya Technology Corporation
InventorTe-Yin Chen
Life of this patent
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Abstract
The present application discloses a method for fabricating a semiconductor device. The method includes providing a substrate, forming a first conductive layer above the substrate, concurrently forming a bottom conductive layer and a redistribution structure above the first conductive layer, forming a programmable insulating layer on the bottom conductive layer, and forming a top conductive layer on the programmable insulating layer. The bottom conductive layer, the programmable insulating layer, and the top conductive layer together configure a programmable unit. The bottom conductive layer and the redistribution structure are electrically coupled to the first conductive layer.
Claims11
A method for fabricating semiconductor device, comprising:
- providing a substrate;
- forming a first conductive layer above the substrate;
- forming a bottom conductive layer above the first conductive layer and electrically coupled to the first conductive layer;
- forming a programmable insulating layer on the bottom conductive layer;
- forming a top conductive layer on the programmable insulating layer;
- forming a redistribution structure above the first conductive layer and electrically coupled to the first conductive layer, wherein the bottom conductive layer, the programmable insulating layer, and the top conductive layer together configure a programmable unit, wherein the bottom conductive layer and the redistribution structure are formed at a same vertical level, wherein the bottom conductive layer and the programmable insulating layer have a same width;
- and
- forming a peak portion on the bottom conductive layer, wherein the programmable insulating layer is on the bottom conductive layer and the peak portion.
A method for fabricating semiconductor device, comprising:
- providing a substrate;
- forming a first conductive layer above the substrate;
- forming a bottom conductive layer above the first conductive layer and electrically coupled to the first conductive layer;
- forming a programmable insulating layer on the bottom conductive layer;
- forming a top conductive layer on the programmable insulating layer;
- and
- forming a redistribution structure above the first conductive layer and electrically coupled to the first conductive layer;
- wherein the bottom conductive layer, the programmable insulating layer, and the top conductive layer together configure a programmable unit, wherein the redistribution structure is at a vertical level higher than a vertical level of the programmable unit, wherein forming the redistribution structure comprises forming a redistribution conductive layer and forming a thermal release layer, the redistribution conductive layer is formed above the first conductive layer and electrically coupled to the first conductive layer, and the thermal release layer is on the redistribution conductive layer.
Dependencies are inferred from the claim text.