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US 11,915,934 B2Granted
Diamond semiconductor system and method
AssigneeAkhan Semiconductor, Inc.
InventorAdam Khan
Life of this patent
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Abstract
Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.
Claims10
A doped diamond film structure, comprising:
- a polycrystalline diamond material having less than micrometer grain size;
- a first set of dopant atoms positioned within at least one layer of less than 900 nm thickness of the polycrystalline diamond;
- a plurality of pathways created by positioning of the first set of dopant atoms within the at least one layer of less than 900 nm thickness;
- and
- a second set of dopant atoms larger than the first set of dopant atoms positioned within the polycrystalline diamond material at least in part by passage through the plurality of pathways.
2 more elements
Dependencies are inferred from the claim text.