# US 11,915,751 B2 · Nonvolatile phase change material logic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,915,751 B2 - Document ID: US11915751B2 - Status: Granted - Kind: B2 - Application number: 17/472,836 - Filed: 2021-09-13 - Published: 2023-03-16 - Granted: 2024-02-27 - Earliest claimed: 2021-09-13 - Assignees: International Business Machines Corporation - Applicants: International Business Machines Corporation - Inventors: Guy M. Cohen; Nanbo Gong; Takashi Ando - Web page: https://patentgrep.com/patent/US11915751B2 ## CPC - G11C 13/0069: {Writing or programming circuits or methods} - G11C 13/0004: {comprising amorphous/crystalline phase transition cells} - H10B 63/84: {arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays} - H10N 70/231: {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect} - H10N 70/801: {Constructional details of multistable switching devices} - H10N 70/823: {adapted for essentially horizontal current flow, e.g. bridge type devices} - H10N 70/8613: {Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel} - H10N 70/8828: {Tellurides, e.g. GeSbTe} - G11C 2013/008: {Write by generating heat in the surroundings of the memory material, e.g. thermowrite} - G11C 2213/55: Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer - G11C: STATIC STORES (semiconductor memory devices H10B) - H10B: ELECTRONIC MEMORY DEVICES - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR ## Abstract A method for forming a nonvolatile PCM logic device may include providing a PCM film component having a first end contact distally opposed from a second end contact, positing a first proximity adjacent to a first surface of the PCM film component, positing a second proximity heater adjacent to a second surface of the PCM film component, wherein the first proximity heater and the second proximity heater are electrically isolated from the PCM film component. The method may further include applying a combination of pulses to one or more of the first proximity heater and the second proximity heater to change a resistance value of the PCM film component corresponding to a logic truth table. Further, the method may include simultaneously applying a first combination of reset pulses to program, or set pulses to initialize, the PCM film component, to the first proximity heater and the second proximity heater. ## Claims ### Claim 1 A method comprising: providing a nonvolatile phase change material (PCM) film component having a first end contact distally opposed from a second end contact; positing a first proximity heater adjacent to a first surface of the PCM film component: positing a second proximity heater adjacent to a second surface of the PCM film component, wherein the first proximity heater and the second proximity heater are electrically isolated from the PCM film component; and applying a combination of pulses to one or more of the first proximity heater and the second proximity heater to change a resistance value of the PCM film component corresponding to a logic truth table. ### Claim 2 (depends on 1) The method of claim 1, further comprising: initializing the PCM film component by: simultaneously applying a first combination of set pulses to the first proximity heater and to the second proximity heater. ### Claim 3 (depends on 2) The method of claim 2, further comprising: programming the PCM film component by: simultaneously applying a first combination of reset pulses to the first proximity heater and to the second proximity heater to change the resistance value to correspond to a NAND truth table. ### Claim 4 (depends on 1) The method of claim 1, further comprising: initializing the PCM film component by: simultaneously applying a first combination of reset pulses to the first proximity heater and to the second proximity heater. ### Claim 5 (depends on 4) The method of claim 4, further comprising: programming the PCM film component by: simultaneously applying a first combination of set pulses to the first proximity heater and to the second proximity heater to change the resistance value to correspond to a NOR truth table. ### Claim 6 (depends on 1) The method of claim 1, further comprising: forming the PCM film component as a fin between the first end contact and the second end contact; forming the first proximity heater as a first side gate of the PCM film component; and forming the second proximity heater as a second side gate of the PCM film component. ### Claim 7 (depends on 1) The method of claim 1, wherein the PCM film component comprises a composition selected from the group consisting of Ge2Sb2Te5, GeTe, and Sb2Te3. ### Claim 8 (depends on 1) The method of claim 1, wherein the first proximity heater and the second proximity heater are at least partially overlapping. ### Claim 9 A device comprising: a phase change material (PCM) film component having a first end contact distally opposed from a second end contact; a first proximity heater adjacent to a first surface of the PCM film component and electrically isolated from the PCM film component; and a second proximity heater adjacent to a second surface of the PCM film component and electrically isolated from the PCM film component, wherein a resistance value of the PCM film component corresponding to a logic truth table is changed by applying a combination of pulses to the first proximity heater and the second proximity heater. ### Claim 10 (depends on 9) The device of claim 9, wherein the PCM film component is initialized by simultaneously applying a first combination of set pulses to the first proximity heater and to the second proximity heater. ### Claim 11 (depends on 10) The device of claim 10, wherein the PCM film component is programmed by simultaneously applying a first combination of reset pulses to the first proximity heater and to the second proximity heater to change the resistance value to correspond to a NAND truth table. ### Claim 12 (depends on 9) The device of claim 9, wherein the PCM film component is initialized by simultaneously applying a first combination of reset pulses to the first proximity heater and to the second proximity heater. ### Claim 13 (depends on 12) The device of claim 12, wherein the PCM film component is programmed by simultaneously applying a first combination of set pulses to the first proximity heater and to the second proximity heater to change the resistance value to correspond to a NOR truth table. ### Claim 14 (depends on 9) The device of claim 9, wherein the PCM film component is formed as a fin between the first end contact and the second end contact, wherein the first proximity heater is formed as a first side gate of the PCM film component, and the second proximity heater is formed as a second side gate of the PCM film component. ### Claim 15 (depends on 9) The device of claim 9, wherein the PCM film component comprises a composition selected from a group consisting of Ge2Sb2Te5, GeTe, and Sb2Te3. ### Claim 16 (depends on 9) The device of claim 9, wherein first proximity heater and second proximity heater are at least partially overlapping. ### Claim 17 A device comprising: a multi-facet phase change material (PCM) bar component having a plurality of sides and a first end contact distally opposed from a second end contact; and a plurality of proximity heaters each partially covering one of the plurality of sides of the multi-facet PCM bar component, wherein a resistance value of the multi-facet PCM bar component corresponding to a logic truth table is changed applying a combination of pulses to one or more of the plurality of proximity heaters. ### Claim 18 (depends on 17) The device of claim 17, wherein the multi-facet PCM bar component is initialized by simultaneously applying a first combination of set pulses to the plurality of proximity heaters, then programmed by simultaneously applying a first combination of reset pulses to the plurality of proximity heaters to change the resistance value corresponding to a NAND truth table, wherein each of the plurality of proximity heaters are electrically isolated from the multi-facet PCM bar component. ### Claim 19 (depends on 17) The device of claim 17, wherein the multi-facet PCM bar component is initialized by applying a combination of reset pulses to the plurality of proximity heaters, then programmed by applying a combination of set pulses to the plurality of proximity heaters to change the resistance value corresponding to a NOR truth table, wherein the multi-facet PCM bar component comprises a composition selection from a group consisting of Ge2Sb2Te5, GeTe, and Sb2Te3. ### Claim 20 (depends on 17) The device of claim 17, wherein the plurality of proximity heaters are at least partially overlapping.