US 11,913,971 B2 · Motion-sensitive field effect transistor, motion detection system, and method

Abstract

Disclosed are a motion-sensitive field effect transistor (MSFET), a motion detection system, and a method. The MSFET includes a gate structure with a reservoir containing conductive fluid and gate electrode(s). Given position(s) of the gate electrode(s) and a fill level of the fluid within the reservoir, contact between the gate electrode(s) and the fluid depends upon the orientation the MSFET channel region relative to the top surface of the conductive fluid and the orientation of the MSFET channel region relative to the top surface of the conductive fluid depends upon position in space and/or movement of the MSFET and, particularly, position in space and/or movement of the chip on which the MSFET is formed. An electrical property of the MSFET in response to specific bias conditions varies depending on whether or not or to what extent the gate electrode(s) contact the fluid and is, thus, measurable for sensing chip motion.

Claims20

Dependent claims

A transistor comprising:

a channel region;
and
a gate structure adjacent to the channel region and comprising:
a reservoir configured to contain a conductive fluid;
and
at least one gate electrode at a fixed location within the reservoir, wherein an orientation of the channel region relative to a top surface of the conductive fluid depends on movement of the transistor and wherein contact between the at least one gate electrode and the conductive fluid depends upon the orientation of the channel region relative to the top surface of the conductive fluid.

3 more elements

A system comprising:

a transistor on a chip, wherein the transistor comprises:
a channel region;
and
a gate structure adjacent to the channel region and comprising:
a reservoir configured to contain a conductive fluid;
and
at least one gate electrode at a fixed location within the reservoir, wherein an orientation of the channel region relative to a top surface of the conductive fluid depends on movement of the transistor and wherein contact between the at least one gate electrode and the conductive fluid depends upon the orientation of the channel region relative to the top surface of the conductive fluid;
a bias circuit electrically connected to the transistor, wherein the bias circuit is configured to apply specific bias conditions to the transistor;
and
a sense circuit electrically connected to the transistor, wherein the sense circuit is configured to sense at least one electrical property of the transistor in response to the specific bias conditions.

7 more elements

A method comprising:

applying, by a bias circuit, specific bias conditions to a transistor on a chip, wherein the transistor comprises:
a channel region;
and
a gate structure adjacent to the channel region and comprising:
a reservoir configured to contain a conductive fluid;
and
at least one gate electrode at a fixed location within the reservoir, wherein an orientation of the channel region relative to a top surface of the conductive fluid depends on movement of the chip and wherein contact between the at least one gate electrode and the conductive fluid depends upon the orientation of the channel region relative to the top surface of the conductive fluid;
and
sensing, by a sense circuit, at least one electrical property of the transistor in response to the specific bias conditions.

6 more elements

Dependencies are inferred from the claim text.

Motion-sensitive field effect transistor, motion detection system, and method

Life of this patent

Motion-sensitive field effect transistor, motion detection system, and method

Life of this patent

Abstract

Claims20