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US 11,913,134 B2Granted
Process for manufacturing a two-dimensional film of hexagonal crystalline structure using epitaxial growth on a transferred thin metal film
AssigneeSoitec
InventorsBruno Ghyselen, Jean-Marc Bethoux
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Abstract
A process for manufacturing a two-dimensional film of a group IV material having a hexagonal crystalline structure, in particular, graphene, comprises formation of a growth substrate, comprising the transfer of a single-crystal metal film suitable for the growth of the two-dimensional film on a support substrate, and epitaxial growth of the two-dimensional film on the metal film of the substrate.
Claims23
A process for manufacturing a two-dimensional film of a group-IV material having a hexagonal crystal structure, comprising:
- providing a single-crystal metal donor substrate;
- forming an embrittlement zone in the donor substrate so as to delimit a single-crystal metal film to be transferred;
- assembling the donor substrate with a support substrate;
- thinning the donor substrate so as to transfer the single-crystal metal film to the support substrate by detaching the donor substrate along the embrittlement zone so as to form a growth substrate comprising the transferred single-crystal metal film and the support substrate, the transferred single-crystal metal film having a thickness of 1 μm or less;
- and
- epitaxially growing the two-dimensional film on the transferred single-crystal metal film of the growth substrate.
3 more elements
Dependencies are inferred from the claim text.