# US 11,910,649 B2 · Display module with transistor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,910,649 B2 - Document ID: US11910649B2 - Status: Granted - Kind: B2 - Application number: 17/874,242 - Filed: 2022-07-26 - Published: 2022-11-17 - Granted: 2024-02-20 - Earliest claimed: 2019-03-19 - Assignees: Innolux Corporation - Applicants: InnoLux Corporation - Inventors: Tsang-Lung Chen; Jhe-Ciou Jhu; Jian-Yu Wang; Chia-Hao Hsieh - Web page: https://patentgrep.com/patent/US11910649B2 ## CPC - H10K 59/1213: {the pixel elements being TFTs} - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)} - H10K 59/123: Connection of the pixel electrodes to the thin film transistors [TFT] - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A substrate module includes a first substrate and a transistor unit. The transistor unit is disposed on the first substrate, and the transistor unit includes an active layer, a first electrode, and a second electrode. The active layer has a first surface and a second surface, and the first surface is opposite to the second surface. The first electrode and the second electrode at least partially overlap the active layer. The second surface contacts the first electrode and the second electrode. A first gallium concentration exists within a first range in the active layer, the first range is adjacent to the second surface of the active layer, a second gallium concentration exists within a second range in the active layer, the second range is adjacent to the first surface of the active layer, and the first gallium concentration is higher than the second gallium concentration. ## Claims ### Claim 1 A substrate module, comprising: a first substrate; and a transistor unit disposed on the first substrate, wherein the transistor unit comprises: an active layer, wherein the active layer has a first surface and a second surface, and the first surface is opposite to the second surface; and a first electrode and a second electrode, wherein the first electrode and the second electrode at least partially overlap the active layer, wherein the second surface contacts the first electrode and the second electrode, wherein a first gallium concentration and a first zinc concentration exist within a first range in the active layer, the first range is adjacent to the second surface of the active layer, a second gallium concentration exists within a second range in the active layer, the second range is adjacent to the first surface of the active layer, the first gallium concentration is higher than the second gallium concentration, and the first zinc concentration is higher than the first gallium concentration. ### Claim 2 (depends on 1) The substrate module according to claim 1, wherein a first indium concentration exists within the first range in the active layer, and the first gallium concentration is higher than the first indium concentration. ### Claim 3 (depends on 1) The substrate module according to claim 1, wherein a first indium concentration exists within the first range in the active layer, and the first zinc concentration is higher than the first indium concentration. ### Claim 4 (depends on 1) The substrate module according to claim 1, wherein a second zinc concentration exists within the second range in the active layer, and the first zinc concentration is higher than the second zinc concentration. ### Claim 5 (depends on 1) The substrate module according to claim 1, wherein a first indium concentration exists within the first range in the active layer, a second indium exists within the second range in the active layer, and the second indium concentration is higher than the first indium concentration. ### Claim 6 (depends on 1) The substrate module according to claim 1, further comprising: a second substrate; and a medium, wherein the medium is disposed between the first substrate and the second substrate. ### Claim 7 (depends on 6) The substrate module according to claim 6, wherein the medium is a liquid crystal medium. ### Claim 8 (depends on 1) The substrate module according to claim 1, wherein the first range in the active layer is closer to the second surface than the second range in the active layer. ### Claim 9 (depends on 8) The substrate module according to claim 8, wherein the second range in the active layer is closer to the first surface than the first range in the active layer. ### Claim 10 (depends on 1) The substrate module according to claim 1, wherein the active layer has a thickness, the first range in the active layer is from the second surface to a site located away from the second surface by a tenth of the thickness in the active layer. ### Claim 11 (depends on 10) The substrate module according to claim 10, wherein the second range in the active layer is from a site located away from the second surface by nine tenths of the thickness in the active layer to the first surface. ### Claim 12 A substrate module, comprising: a first substrate; and a transistor unit disposed on the first substrate, wherein the transistor unit comprises: an active layer, wherein the active layer has a first surface and a second surface, and the first surface is opposite to the second surface; and a first electrode and a second electrode, wherein the first electrode and the second electrode at least partially overlap the active layer, wherein the second surface contacts the first electrode and the second electrode, wherein a first gallium concentration, a first zinc concentration, and a first indium concentration exist within a first range in the active layer, the first range is adjacent to the second surface of the active layer, a second gallium concentration exists within a second range in the active layer, the second range is adjacent to the first surface of the active layer, the first gallium concentration is higher than the second gallium concentration, and the first zinc concentration is higher than the first indium concentration. ### Claim 13 A substrate module, comprising: a first substrate; and a transistor unit disposed on the first substrate, wherein the transistor unit comprises: an active layer, wherein the active layer has a first surface and a second surface, and the first surface is opposite to the second surface; and a first electrode and a second electrode, wherein the first electrode and the second electrode at least partially overlap the active layer, wherein the second surface contacts the first electrode and the second electrode, wherein a first gallium concentration and a first zinc concentration exist within a first range in the active layer, the first range is adjacent to the second surface of the active layer, a second gallium concentration and a second zinc concentration exist within a second range in the active layer, the second range is adjacent to the first surface of the active layer, the first gallium concentration is higher than the second gallium concentration, and the first zinc concentration is higher than the second zinc concentration.