# US 11,910,117 B2 · Solid-state imaging element and electronic apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,910,117 B2 - Document ID: US11910117B2 - Status: Granted - Kind: B2 - Application number: 17/763,783 - Filed: 2020-09-18 - Published: 2022-10-27 - Granted: 2024-02-20 - Earliest claimed: 2019-10-04 - Assignees: Sony Semiconductor Solutions Corporation - Applicants: Sony Semiconductor Solutions Corporation - Inventors: Yusaku Sugimori - Web page: https://patentgrep.com/patent/US11910117B2 ## CPC - H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components - H10F 39/8037: {the integrated elements comprising a transistor} - H04N 25/531: by controlling rolling shutters in CMOS SSIS - H04N 25/671: for non-uniformity detection or correction - H04N 25/779: Circuitry for scanning or addressing the pixel array - H04N 25/7795: {Circuitry for generating timing or clock signals} - H04N 25/79: Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors - H10F 39/809: {of hybrid image sensors} - H10F 39/811: {Interconnections} - H04N 25/771: comprising storage means other than floating diffusion - H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract The present disclosure relates to a solid-state imaging element and an electronic apparatus that can achieve a higher image quality. The imaging element includes a pixel having a global drive portion in which all rows are driven at a same timing and a rolling drive portion in which each row is driven at a corresponding timing, a pixel array region in which a plurality of the pixels is placed in an array, a global drive circuit configured to supply a drive signal to the global drive portion, and a rolling drive circuit configured to supply a drive signal to the rolling drive portion. Further, the global drive circuit is placed on each of at least three or more sides of four sides surrounding the pixel array region. The present technology is applicable to a stacked CMOS image sensor, for example. ## Claims ### Claim 1 A solid-state imaging element comprising: a pixel having a global drive portion in which all rows are driven at a same timing and a rolling drive portion in which each row is driven at a corresponding timing; a pixel array region in which a plurality of the pixels is placed in an array; a global drive circuit configured to supply a drive signal to the global drive portion; and a rolling drive circuit configured to supply a drive signal to the rolling drive portion, wherein the global drive circuit is placed on each of at least three or more sides of four sides surrounding the pixel array region. ### Claim 2 (depends on 1) The solid-state imaging element according to claim 1, wherein the global drive circuit includes four global drive circuits placed along a left side, a right side, an upper side, and a lower side of the pixel array region. ### Claim 3 (depends on 1) The solid-state imaging element according to claim 1, wherein the solid-state imaging element has a stack structure in which at least two chips are stacked. ### Claim 4 (depends on 3) The solid-state imaging element according to claim 3, wherein the pixel is formed across an upper chip on which the global drive portion and the rolling drive circuit are provided and a lower chip on which the rolling drive circuit is provided. ### Claim 5 (depends on 4) The solid-state imaging element according to claim 4, wherein the global drive circuit is placed in a peripheral region of the pixel array region on the upper chip, and the rolling drive circuit is placed in a peripheral region of the pixel array region on the lower chip. ### Claim 6 (depends on 4) The solid-state imaging element according to claim 4, wherein the rolling drive circuit is placed in a peripheral region of the pixel array region on the upper chip, and the global drive circuit is placed in a peripheral region of the pixel array region on the lower chip. ### Claim 7 (depends on 4) The solid-state imaging element according to claim 4, wherein the global drive circuit is formed across the upper chip and the lower chip. ### Claim 8 (depends on 7) The solid-state imaging element according to claim 7, wherein an N-type transistor forming the global drive circuit is placed on the upper chip, and a P-type transistor forming the global drive circuit is placed on the lower chip. ### Claim 9 (depends on 1) The solid-state imaging element according to claim 1, wherein the global drive portion includes a photodiode, a drain transistor, and a transfer transistor that form the pixel, and the rolling drive portion includes a read-out transistor and a selection transistor that form the pixel. ### Claim 10 (depends on 1) The solid-state imaging element according to claim 1, wherein the pixel includes a comparator and a counter for performing AD conversion on an analog pixel signal inside the pixel and outputting a digital pixel signal, the global drive portion includes a photodiode, a drain transistor, and a transfer transistor that form the pixel, and the rolling drive portion includes a latch forming the pixel. ### Claim 11 An electronic apparatus comprising: a solid-state imaging element including a pixel having a global drive portion in which all rows are driven at a same timing and a rolling drive portion in which each row is driven at a corresponding timing, a pixel array region in which a plurality of the pixels is placed in an array, a global drive circuit configured to supply a drive signal to the global drive portion, and a rolling drive circuit configured to supply a drive signal to the rolling drive portion, the global drive circuit being placed on each of at least three or more sides of four sides surrounding the pixel array region.