# US 11,909,329 B2 · Semiconductor unit, semiconductor device, battery unit, and vehicle > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,909,329 B2 - Document ID: US11909329B2 - Status: Granted - Kind: B2 - Application number: 17/288,827 - Filed: 2019-10-30 - Published: 2021-11-18 - Granted: 2024-02-20 - Earliest claimed: 2018-11-02 - Assignees: Rohm Co., Ltd. - Applicants: Rohm Co., Ltd. - Inventors: Mineo Miura; Masashi Hayashiguchi; Jun Terada - Web page: https://patentgrep.com/patent/US11909329B2 ## CPC - H02M 1/08: Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters - H02M 7/537: using semiconductor devices only, e.g. single switched pulse inverters - H02H 3/08: responsive to excess current (responsive to abnormal temperature caused by excess current H02H5/04) - H02H 3/085: {making use of a thermal sensor, e.g. thermistor, heated by the excess current (also responsive to the temperature of the protected device H02H5/041, thermal images H02H6/00)} - H02H 5/04: responsive to abnormal temperature {(specially adapted for electric machines H02H7/0852)} - H02H 7/008: {for protective arrangements according to this subclass (H02H9/042, H02H9/043 take precedence; protection of spark-gaps H02H7/24)} - H02H 7/12: for static converters or rectifiers {(for discharge lamp power supplies using static converters H05B41/2851, H05B41/2921, H05B41/2981)} - H02H 7/18: for batteries; for accumulators - H02M 1/32: Means for protecting converters other than automatic disconnection - H02M 7/003: {Constructional details, e.g. physical layout, assembly, wiring or busbar connections} - H03K 17/08: Modifications for protecting switching circuit against overcurrent or overvoltage - H03K 17/107: {in composite switches} - H03K 2017/0806: {against excessive temperature} - Y02T 10/70: Energy storage systems for electromobility, e.g. batteries - H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P) - H02H: EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS (indicating or signalling undesired working conditions G01R, e.g. G01R31/00, G08B; locating faults along lines G01R31/08; emergency protective devices H01H) - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) - Y02T: CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION ## Abstract A semiconductor unit includes a semiconductor device, a controller, and a resistor. The semiconductor device includes a transistor arranged between a positive electrode of a battery and an inverter circuit electrically connected to the battery. The controller is connected to a control terminal of the transistor and configured to control the transistor. The resistor arranged between the control terminal and the controller. The controller controls the transistor so that when a current flowing to the transistor is greater than or equal to a threshold value, the transistor is deactivated. The resistor has a resistance value that is greater than or equal to 100 Ω. ## Claims ### Claim 1 A semiconductor unit, comprising: a semiconductor device including a transistor, the transistor including a first terminal for a battery, a second terminal for an inverter circuit, and a control terminal; a controller connected to the control terminal and configured to control on-off operations between the first terminal and the second terminal; and a resistor arranged between the control terminal and the controller, wherein the controller controls the transistor so that when a current flowing to the transistor is greater than or equal to a threshold value, the transistor is deactivated, the resistor has a resistance value that is greater than or equal to 100 Ω, the transistor further includes a temperature-sensing diode, the transistor is provided as a semiconductor chip, and the temperature-sensing diode is arranged in a central portion of a front surface of the semiconductor chip of the transistor. ### Claim 2 (depends on 1) The semiconductor unit according to claim 1, wherein the transistor includes a current sense element that is electrically connected to a current sense pad, the current sense element being formed of a pattern that is separated from the first terminal. ### Claim 3 (depends on 1) The semiconductor unit according to claim 1, wherein the controller further includes a temperature detection circuit that detects a temperature of the transistor in accordance with a signal from the temperature-sensing diode, and when the signal detected by the temperature detection circuit is greater than or equal to a temperature threshold value, the controller provides a current decrease signal to the control terminal of the transistor. ### Claim 4 (depends on 1) The semiconductor unit according to claim 1 wherein the transistor is an insulated MOSFET formed from a silicon carbide (SiC) substrate, the MOSFET includes the semiconductor chip having the front surface and a rear surface, the front surface of the semiconductor chip includes a source electrode pad, the rear surface of the semiconductor chip includes a drain electrode, the source electrode pad is separated into two source electrode pads at a center of the front surface of the semiconductor chip, and the temperature-sensing diode is arranged between the two source electrode pads. ### Claim 5 (depends on 4) The semiconductor unit according to claim 4, wherein the transistor includes a current sense element, the front surface of the semiconductor chip includes a gate electrode pad, a current sense pad electrically connected to the current sense element, an anode electrode pad electrically connected to an anode of the temperature-sensing diode, and a cathode electrode pad electrically connected to a cathode of the temperature-sensing diode, the two source electrode pads include a cutaway portion that is cut away in a direction orthogonal to an arrangement direction of the two source electrode pads in a plan view of the transistor, the cutaway portion defines a region recessed in the direction orthogonal to the arrangement direction, and in the region, the gate electrode pad, the current sense pad, the anode electrode pad, and the cathode electrode pad are arranged in a direction parallel to the arrangement direction. ### Claim 6 (depends on 1) The semiconductor unit according to claim 1, wherein the transistor is an insulated-gate bipolar transistor (IGBT), the IGBT includes the semiconductor chip having the front surface and a rear surface, the front surface of the semiconductor chip includes an emitter electrode pad, the rear surface of the semiconductor chip includes a collector electrode, the emitter electrode pad is separated into two emitter electrode pads at a center of the front surface of the semiconductor chip, and the temperature-sensing diode is arranged between the two emitter electrode pads. ### Claim 7 (depends on 6) The semiconductor unit according to claim 6, wherein the transistor includes a current sense element, the front surface of the semiconductor chip includes a gate electrode pad, a current sense pad electrically connected to the current sense element, an anode electrode pad electrically connected to an anode of the temperature-sensing diode, and a cathode electrode pad electrically connected to a cathode of the temperature-sensing diode, two emitter electrode pads include a cutaway portion that is cut away in a direction orthogonal to an arrangement direction of the two emitter electrode pads in a plan view of the transistor, the cutaway portion defines a region recessed in the direction orthogonal to the arrangement direction, and in the region, the gate electrode pad, the current sense pad, the anode electrode pad, and the cathode electrode pad are arranged in a direction parallel to the arrangement direction. ### Claim 8 (depends on 1) The semiconductor unit according to claim 1, wherein the semiconductor unit comprises multiple of the semiconductor device, and the transistors of the multiple semiconductor devices are connected in parallel to each other. ### Claim 9 (depends on 8) The semiconductor unit according to claim 8, wherein each of the transistors of the multiple semiconductor devices includes a temperature-sensing diode. ### Claim 10 (depends on 9) The semiconductor unit according to claim 9, wherein the controller includes temperature detection circuits, the temperature detection circuits respectively detect temperatures of the transistors of the multiple semiconductor devices from the temperature-sensing diodes of the multiple semiconductor devices, and when at least one of the temperatures detected by the temperature detection circuits is greater than or equal to a temperature threshold value, the controller provides a current decrease signal to each of the control terminals of the transistors of the multiple semiconductor devices. ### Claim 11 (depends on 1) A battery unit, comprising: a battery; and the semiconductor unit according to claim 1. ### Claim 12 (depends on 11) A vehicle, comprising: the battery unit according to claim 11; the inverter circuit; and a motor driven by the inverter circuit. ### Claim 13 A semiconductor unit, comprising: a semiconductor device including a transistor, the transistor including a first terminal for a battery, a second terminal for an inverter circuit, and a control terminal; and a controller connected to the control terminal and configured to control on-off operations between the first terminal and the second terminal, wherein the controller controls a voltage between the first terminal or the second terminal of the transistor and the control terminal the of the transistor to be less than or equal to a voltage at which a current flowing to the transistor is saturated at a predetermined current, the transistor further includes a temperature-sensing diode, the transistor is provided as a semiconductor chip, and the temperature-sensing diode is arranged in a central portion of a front surface of the semiconductor chip of the transistor. ### Claim 14 (depends on 13) The semiconductor unit according to claim 13, wherein the semiconductor unit comprises multiple of the semiconductor device, and the transistors of the multiple semiconductor devices are connected in parallel to each other. ### Claim 15 (depends on 13) The semiconductor unit according to claim 13, wherein the controller controls a voltage between the first terminal or the second terminal and the control terminal of each of the transistors of the multiple semiconductor devices so that a current flowing to each of the transistors is less than or equal to a saturation current. ### Claim 16 A semiconductor device, comprising: a transistor including a first terminal for a battery, a second terminal for an inverter circuit, and a control terminal; and at least one bonding wire connected between an electrode of the transistor and the first terminal, wherein the number of bonding wires and a diameter of the bonding wire are set so that the bonding wire breaks when a current flowing to the transistor is greater than or equal to a rated current of the transistor. ### Claim 17 (depends on 16) The semiconductor device according to claim 16, wherein a threshold value is set so that the threshold value is greater than or equal to two times the rated current of the transistor and less than or equal to four times the rated current of the transistor. ### Claim 18 (depends on 16) A semiconductor unit, comprising: the semiconductor device according to claim 16; and a controller that controls the semiconductor device. ### Claim 19 (depends on 18) The semiconductor unit according to claim 18, wherein the semiconductor unit comprises multiple of the semiconductor device, and the transistors of the multiple semiconductor devices are connected in parallel to each other. ### Claim 20 (depends on 18) A battery unit, comprising: a battery; and the semiconductor unit according to claim 18.