# US 11,909,177 B2 · Continuous-wave organic thin-film distributed feedback laser and electrically driven organic semiconductor laser diode

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- Number: US 11,909,177 B2
- Document ID: US11909177B2
- Status: Granted
- Kind: B2
- Application number: 17/674,668
- Filed: 2022-02-17
- Published: 2022-09-29
- Granted: 2024-02-20
- Earliest claimed: 2016-09-02
- Assignees: Kyushu University, National University Corporation; Koala Tech Inc.
- Applicants: Kyushu University, National University Corporation; Koala Tech Inc.
- Inventors: Chihaya Adachi; Sangarange Don Atula Sandanayaka; Toshinori Matsushima; Kou Yoshida; Jean-Charles Ribierre; Fatima Bencheikh; Kenichi Goushi; Takashi Fujihara
- Web page: https://patentgrep.com/patent/US11909177B2

## CPC

- H01S 5/36: comprising organic materials
- H01S 3/1305: {Feedback control systems}
- H01S 5/04253: {having specific optical properties, e.g. transparent electrodes}
- H01S 5/1215: {Multiplicity of periods}
- H01S 5/1231: {Grating growth or overgrowth details}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

Disclosed are a current excitation type organic semiconductor laser containing a pair of electrodes, an organic laser active layer and an optical resonator structure between the pair of electrodes and a laser having an organic layer on a distributed feedback grating structure. The lasers include a continuous-wave laser, a quasi-continuous-wave laser and an electrically driven semiconductor laser diode.

## Claims

### Claim 1

A current-injection organic semiconductor laser diode comprising:
a substrate composed of a first electrode and an optical resonator structure of an insulating material,
one or more organic layers including a light amplification layer composed of an organic semiconductor, and
a second electrode,
wherein the one or more organic layers are laminated on the surface of the substrate so that one of the one or more organic layers contacts with the first electrode, and
at least one of the following conditions is satisfied:
(A) the optical resonator structure has a grating with a gap at least in a part on the side facing the first electrode,
(B) the optical resonator structure has a grating having a completely-removed groove,
(C) the optical resonator structure has a grating having a groove in which the first electrode is exposed,
(D) the optical cavity structure has a grating having a plurality of insulating layers periodically arranged on the surface of the first electrode, and
(E) the optical cavity structure has a grating pattern formed directly on the surface of the first electrode.

### Claim 2 (depends on 1)

The current-injection organic semiconductor laser diode according to claim 1, wherein the optical resonator structure is composed of a distributed feedback (DFB) structure.

### Claim 3 (depends on 1)

The current-injection organic semiconductor laser diode according to claim 1, wherein the optical resonator structure is a one dimensional resonator structure.

### Claim 4 (depends on 1)

The current-injection organic semiconductor laser diode according to claim 1, wherein the optical resonator structure is composed of a second-order Bragg scattering region surrounded by the first-order Bragg scattering region.

### Claim 5 (depends on 1)

The current-injection organic semiconductor laser diode according to claim 1, the one or more organic layers consists of only one organic layer that is the light amplification layer.

### Claim 6 (depends on 1)

The current-injection organic semiconductor laser diode according to claim 1, wherein an exciton is generated by the current excitation and overlaps with the optical resonant mode of the optical resonator structure.

### Claim 7 (depends on 1)

The current-injection organic semiconductor laser diode according to claim 1, showing no substantial exciton annihilation at a lasing wavelength.

### Claim 8 (depends on 7)

The current-injection organic semiconductor laser diode according to claim 7, showing no substantial singlet-singlet and triplet-triplet annihilation.

### Claim 9 (depends on 1)

The current-injection organic semiconductor laser diode according to claim 1, showing no substantial polaron absorption loss at a lasing wavelength.

### Claim 10 (depends on 1)

The current-injection organic semiconductor laser diode according to claim 1, wherein the ratio of an electron mobility to a hole mobility in the light amplification layer is within the range of from 1/10 to 10/1.

### Claim 11 (depends on 1)

The current-injection organic semiconductor laser diode according to claim 1, wherein depth of the optical resonator structure is smaller than thickness of the light amplification layer.

### Claim 12 (depends on 1)

The current-injection organic semiconductor laser diode according to claim 1, wherein the first electrode is transparent.

### Claim 13 (depends on 1)

The current-injection organic semiconductor laser diode according to claim 1, wherein the first electrode is ITO.

### Claim 14 (depends on 1)

The current-injection organic semiconductor laser diode according to claim 1, wherein the light amplification layer contacts with the first electrode.