# US 11,909,176 B2 · Nanocrystal surface-emitting lasers

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- Number: US 11,909,176 B2
- Document ID: US11909176B2
- Status: Granted
- Kind: B2
- Application number: 17/071,832
- Filed: 2020-10-15
- Published: 2021-04-22
- Granted: 2024-02-20
- Earliest claimed: 2019-10-15
- Assignees: The Regents of the University of Michigan
- Applicants: The Regents of the University of Michigan
- Inventors: Yong-Ho Ra; Roksana Tonny Rashid; Xianhe Liu; Zetian Mi
- Web page: https://patentgrep.com/patent/US11909176B2

## CPC

- H01S 5/341: {Structures having reduced dimensionality, e.g. quantum wires}
- H01S 5/11: Comprising a photonic bandgap structure
- H01S 5/183: having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S 5/185: having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] (comprising a photonic bandgap structure H01S5/11)
- H01S 5/30: Structure or shape of the active region; Materials used for the active region
- H01S 5/320275: {semi-polar orientation}
- H01S 5/32308: {emitting light at a wavelength less than 900 nm}
- H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
- H01S 5/04253: {having specific optical properties, e.g. transparent electrodes}
- H01S 5/1042: {Optical microcavities, e.g. cavity dimensions comparable to the wavelength}
- H01S 2301/176: Specific passivation layers on surfaces other than the emission facet
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

An all-epitaxial, electrically injected surface-emitting green laser operates in a range of about 520-560 nanometers (nm). At 523 nm, for example, the device exhibits a threshold current density of approximately 0.4 kilo-amperes per square centimeter (kA/cm2), which is over one order of magnitude lower than that of previously reported blue laser diodes.

## Claims

### Claim 1

A nanowire, comprising:
a first semiconductor region;
a second semiconductor region; and
a heterostructure disposed between and coupled to the first semiconductor region and the second semiconductor region, the heterostructure including;
a quantum disk disposed in a first semipolar plane of the nanowire; and
a shell layer disposed in a second semipolar plane of the nanowire;
wherein the nanowire is operable for emitting stimulated emission light having a wavelength in a range of 520-560 nanometers at a current density that is at least an order of magnitude less than ten kiloamperes per square centimeter (10 kA/cm2).

### Claim 2 (depends on 1)

The nanowire of claim 1, wherein the current density is on the order of 0.4 kA/cm2 and less.

### Claim 3 (depends on 1)

The nanowire of claim 1, wherein the first semiconductor region comprises n-doped gallium nitride, and wherein the second semiconductor region comprises p-doped gallium nitride.

### Claim 4 (depends on 1)

The nanowire of claim 1, wherein the heterostructure comprises shell layers and quantum disks, and wherein the shell layers comprise aluminum gallium nitride, and the quantum disks comprise indium gallium nitride.

### Claim 5 (depends on 1)

The nanowire of claim 1, wherein the heterostructure comprises shell layers and quantum disks, and wherein the quantum disks are interleaved with the shell layers.

### Claim 6 (depends on 1)

The nanowire of claim 1, wherein the heterostructure is cone-shaped and is narrower as distance from the substrate increases.

### Claim 7 (depends on 1)

The nanowire of claim 1, wherein the nanowire has a transverse cross-section that is hexagonal.

### Claim 8

A device, comprising:
a substrate; and
a surface-emitting laser coupled to the substrate and comprising a nanocrystal array comprising a plurality of nanowires, wherein the plurality of nanowires include;
an n-type semiconductor region;
a p-type semiconductor region; and
a heterostructure between the n-type semiconductor region and the p-type semiconductor region, the heterostructure includes;
a quantum disk disposed in a first semipolar plane of the nanowire; and
a shell layer disposed in a second semipolar plane of the nanowire.

### Claim 9 (depends on 8)

The device of claim 8, wherein the nanocrystal array comprises an optical cavity.

### Claim 10 (depends on 8)

The device of claim 8, wherein the nanowires have a photonic crystalline structure comprising an optical cavity; and wherein, in operation, the photonic crystalline structure is configured to form a standing wave in the photonic crystalline structure without a dynamic Bragg reflector.

### Claim 11 (depends on 10)

The device of claim 10, wherein a reciprocal lattice of the photonic crystalline structure comprises six equivalent and coupled Brillouin zone gamma points.

### Claim 12 (depends on 10)

The device of claim 10, wherein the nanocrystal array exhibits a uniform photonic band-edge resonant effect in operation.

### Claim 13 (depends on 8)

The device of claim 8, wherein the nanowires are operable for emitting stimulated emission light having a wavelength in a range of 520-560 nanometers at a current density that is at least an order of magnitude less than ten kiloamperes per square centimeter.

### Claim 14 (depends on 8)

The device of claim 8, wherein the nanowires are operable for emitting stimulated emission light having a wavelength in a range selected from the group consisting of: 10-400 nanometers; and 635-700 nanometers.

### Claim 15 (depends on 8)

The device of claim 8, wherein the nanocrystal array includes multiple rows of the nanowires, wherein each row includes multiple nanowires, wherein each nanowire of the plurality of nanowires has a transverse cross-section that is hexagonal, and wherein the nanowires are arranged in a triangular lattice in the array.

### Claim 16

A monolithic device, comprising:
a substrate layer; and
a plurality of nanowires coupled to the substrate layer, wherein the plurality of nanowires include;
a heterostructure including a quantum disk disposed in a first semipolar plane of the nanowire, and a shell layer disposed in a second semipolar plane of the nanowire.

### Claim 17 (depends on 16)

The device of claim 16, further comprising an n-type semiconductor layer disposed on the substrate layer and comprising a uniform array of holes, wherein each nanowire of the plurality of nanowires extends from a respective hole of the array of holes.

### Claim 18 (depends on 16)

The device of claim 16, wherein the nanowires have uniform diameters, lengths, and shapes and are uniformly spaced within the nanostructure array.

### Claim 19 (depends on 16)

The device of claim 16, further comprising a light-transmissive layer coupled to the nanostructure array.

### Claim 20 (depends on 16)

The device of claim 16, wherein the substrate layer is light-transmissive.

### Claim 21 (depends on 16)

The device of claim 16, wherein the nanowires are operable for emitting stimulated emission light having a wavelength in a range of 520-560 nanometers.

### Claim 22 (depends on 16)

The device of claim 16, wherein the plurality of nanowires coupled to the substrate comprise a nanocrystal surface-emitting laser (NCSEL) diode.

### Claim 23 (depends on 16)

The device of claim 16, wherein:
the plurality of nanowires are arranged in an array including multiple rows of the nanowires, and each row includes multiple nanowires;
each nanowire of the plurality of nanowires has a transverse cross-section dimension of 230 nanometers (nm), and a spacing of 30 nm between the plurality of nanowires;
the quantum disk comprises an Indium Gallium Nitride (InGaN) quantum disk; and
the shell layer comprises an Aluminum Gallium Nitride (AlGaN) shell layer.