Wavelength-tunable laser and optical module
AssigneeFurukawa Electric Co., Ltd.
InventorKazuaki Kiyota
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Abstract
A waveguide based wavelength-tunable laser formed on a semiconductor substrate includes a first reflector from which laser light is output, a second reflector configuring a laser resonator together with the first reflector, a gain portion that is provided between the first reflector and the second reflector, at least two wavelength filters that can adjust wavelength characteristics and adjust a wavelength of the laser light, and a phase adjuster that adjusts an optical path length in the laser resonator, and a waveguide is formed to fold back an optical path by an angle of substantially 180 degrees between the first reflector and the second reflector.
Claims17
A waveguide based wavelength-tunable laser formed on a semiconductor substrate, the wavelength-tunable laser comprising:
- a first reflector from which laser light is output;
- a second reflector configuring a laser resonator together with the first reflector;
- a gain portion that is provided between the first reflector and the second reflector;
- at least two wavelength filters that can adjust wavelength characteristics and adjust a wavelength of the laser light;
- a phase adjuster that adjusts an optical path length in the laser resonator, wherein
- a folded portion configured by a waveguide that folds back an optical path by an angle of substantially 180 degrees is provided between the first reflector and the second reflector;
- and
- a semiconductor optical amplifier that is provided on a laser light output side of the first reflector on the semiconductor substrate, wherein at least one of the two wavelength filters and the phase adjuster has a refractive index that is adjusted by a heater and is arranged to be separated from the semiconductor optical amplifier by a distance larger than a thickness of the semiconductor substrate.
A waveguide based wavelength-tunable laser formed on a semiconductor substrate, the wavelength-tunable laser comprising:
- a first reflector from which laser light is output;
- a second reflector configuring a laser resonator together with the first reflector;
- a gain portion that is provided between the first reflector and the second reflector;
- at least two wavelength filters that can adjust wavelength characteristics and adjust a wavelength of the laser light;
- a phase adjuster that adjusts an optical path length in the laser resonator, wherein
- a folded portion configured by a waveguide that folds back an optical path by an angle of substantially 180 degrees is provided between the first reflector and the second reflector;
- a semiconductor optical amplifier that is provided on a laser light output side of the first reflector on the semiconductor substrate;
- and
- an optical branching portion that is provided between the first reflector and the semiconductor optical amplifier and branches a part of the laser light that is output from the first reflector to the semiconductor optical amplifier, a waveguide guiding the part of the laser light branched reaching an end facet other than an end facet from which the laser light is output.
A waveguide based wavelength-tunable laser formed on a semiconductor substrate, comprising:
- a first reflector from which laser light is output;
- a second reflector configuring a laser resonator together with the first reflector;
- a gain portion that is provided between the first reflector and the second reflector;
- at least two wavelength filters that can adjust wavelength characteristics and adjust a wavelength of the laser light;
- a phase adjuster that adjusts an optical path length in the laser resonator;
- and
- a semiconductor optical amplifier that is provided on a laser light output side of the first reflector, wherein:
- a folded portion configured by a waveguide that folds back an optical path by an angle of substantially 180 degrees is provided between the first reflector and the semiconductor optical amplifier, and
- at least one of the two wavelength filters and the phase adjuster has a refractive index that is adjusted by a heater and is arranged to be separated from the semiconductor optical amplifier by a distance larger than a thickness of the semiconductor substrate.
A waveguide based wavelength-tunable laser formed on a semiconductor substrate, comprising:
- a first reflector from which laser light is output;
- a second reflector configuring a laser resonator together with the first reflector;
- a gain portion that is provided between the first reflector and the second reflector;
- at least two wavelength filters that can adjust wavelength characteristics and adjust a wavelength of the laser light;
- a phase adjuster that adjusts an optical path length in the laser resonator;
- a semiconductor optical amplifier that is provided on a laser light output side of the first reflector, wherein a folded portion configured by a waveguide that folds back an optical path by an angle of substantially 180 degrees is provided between the first reflector and the semiconductor optical amplifier, and
- an optical branching portion that is provided between the first reflector and the semiconductor optical amplifier and branches a part of the laser light that is output from the first reflector to the semiconductor optical amplifier, a waveguide guiding the part of the laser light branched reaching an end facet other than an end facet from which the laser light is output.
Dependencies are inferred from the claim text.