# US 11,908,974 B2 · Light emitting diodes containing deactivated regions and methods of making the same

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- Number: US 11,908,974 B2
- Document ID: US11908974B2
- Status: Granted
- Kind: B2
- Application number: 17/583,867
- Filed: 2022-01-25
- Published: 2022-05-12
- Granted: 2024-02-20
- Earliest claimed: 2018-12-03
- Assignees: Glo Technologies LLC
- Applicants: Nanosys, Inc.
- Inventors: Max Batres; Fariba Danesh; Michael J. Cich; Zhen Chen
- Web page: https://patentgrep.com/patent/US11908974B2

## CPC

- H10H 20/8252: {characterised by the dopants}
- H10H 20/835: {Reflective materials}
- H10H 20/0137: {the light-emitting regions comprising nitride materials}
- H10H 20/8162: {Current-blocking structures}
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10W 90/00: Package configurations
- H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
- H10H 20/8215: {characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping}
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A light emitting device (LED) includes an n-doped semiconductor material layer, an active region including an optically active compound semiconductor layer stack configured to emit light located on the n-doped semiconductor material layer, a p-doped semiconductor material layer located on the active region, an anode contact contacting the p-doped semiconductor material layer, a reflector overlying and electrically connected to the anode contact, and a device-side bonding pad layer located on the reflector. The p-doped semiconductor material layer includes an electrically active region that is at least partially covered by the anode contact and an inactive region that an electrical conductivity less than 30% of the electrically active region.

## Claims

### Claim 1

A method of forming a light emitting diode (LED), comprising:
forming n-doped semiconductor material layer;
forming an active region including an optically active compound semiconductor layer stack configured to emit light on the n-doped semiconductor material layer;
forming a p-doped semiconductor material layer on the active region;
deactivating a physically exposed portion of the p-doped semiconductor material layer with a plasma treatment to form an inactive region while an electrically active region remains in the p-doped semiconductor material that is not subjected to the plasma during the plasma treatment;
forming an anode contact on the p-doped semiconductor material layer;
forming a reflector overlying and electrically connected to the anode contact; and
forming a device-side bonding pad layer on the reflector,
wherein an area of an interface between the electrically active region and the anode contact is equal to an area which during LED operation produces a current density in a range from 0.90 times a peak external quantum efficiency of the LED to the peak external quantum efficiency of the LED.

### Claim 2

A method of forming a light emitting diode (LED), comprising:
forming n-doped semiconductor material layer;
forming an active region including an optically active compound semiconductor layer stack configured to emit light on the n-doped semiconductor material layer;
forming a p-doped semiconductor material layer on the active region;
deactivating a physically exposed portion of the p-doped semiconductor material layer with a plasma treatment to form an inactive region while an electrically active region remains in the p-doped semiconductor material that is not subjected to the plasma during the plasma treatment;
forming an anode contact on the p-doped semiconductor material layer;
forming a reflector overlying and electrically connected to the anode contact; and
forming a device-side bonding pad layer on the reflector,
wherein an electrical conductivity of the inactive region is less than 30% of the electrical conductivity of the electrically active region.

### Claim 3

A method of forming a light emitting diode (LED), comprising:
forming n-doped semiconductor material layer;
forming an active region including an optically active compound semiconductor layer stack configured to emit light on the n-doped semiconductor material layer;
forming a p-doped semiconductor material layer on the active region;
deactivating a physically exposed portion of the p-doped semiconductor material layer with a plasma treatment to form an inactive region while an electrically active region remains in the p-doped semiconductor material that is not subjected to the plasma during the plasma treatment;
forming an anode contact on the p-doped semiconductor material layer;
forming a reflector overlying and electrically connected to the anode contact; and
forming a device-side bonding pad layer on the reflector,
wherein the inactive region has a crystalline defect density that is at least ten times a crystalline defect density of the electrically active region.

### Claim 4

A method of forming a light emitting diode (LED), comprising:
forming n-doped semiconductor material layer;
forming an active region including an optically active compound semiconductor layer stack configured to emit light on the n-doped semiconductor material layer;
forming a p-doped semiconductor material layer on the active region;
deactivating a physically exposed portion of the p-doped semiconductor material layer with a plasma treatment to form an inactive region while an electrically active region remains in the p-doped semiconductor material that is not subjected to the plasma during the plasma treatment;
forming an anode contact on the p-doped semiconductor material layer;
forming a reflector overlying and electrically connected to the anode contact; and
forming a device-side bonding pad layer on the reflector,
wherein deactivating the physically exposed portion of the p-doped semiconductor material layer with the plasma treatment occurs after forming the anode contact, such that the inactive region is exposed by the anode contact while the electrically active region is covered by the anode contact and is not subjected to the plasma during the plasma treatment.