# US 11,908,973 B2 · Light-emitting device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,908,973 B2 - Document ID: US11908973B2 - Status: Granted - Kind: B2 - Application number: 17/448,550 - Filed: 2021-09-23 - Published: 2022-03-31 - Granted: 2024-02-20 - Earliest claimed: 2020-09-25 - Assignees: Xiamen San'an Optoelectronics Co., Ltd. - Applicants: Xiamen San'an Optoelectronics Co., Ltd. - Inventors: Renlong Yang; Ping Zhang - Web page: https://patentgrep.com/patent/US11908973B2 ## CPC - H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures - H10H 20/8162: {Current-blocking structures} - H10H 20/831: characterised by their shape - H10H 20/8312: {extending at least partially through the bodies} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A light-emitting devise includes first and second type semiconductor layers, an active layer interposed therebetween, a current blocking layer disposed on the first type semiconductor layer and including a first strip portion, and a first electrode disposed on the current blocking layer and including a first electrode pad, a first electrode end portion distal from the first electrode pad, and a first electrode extension portion extending between the first electrode pad and the first electrode end portion. The first strip portion of the current blocking layer is located beneath the first electrode extension portion, and has a widened section having a width that gradually increases in a direction away from the first electrode pad. ## Claims ### Claim 1 A light-emitting device, comprising: a first type semiconductor layer; a second type semiconductor layer; an active layer disposed between said first type semiconductor layer and said second type semiconductor layer; a current blocking layer that is disposed on said first type semiconductor layer to expose a portion of said first type semiconductor layer, said current blocking layer including a first strip portion; and a first electrode that is disposed on said current blocking layer and that includes a first electrode pad, a first electrode end portion distal from said first electrode pad, and a first electrode extension portion extending between said first electrode pad and said first electrode end portion, wherein said first strip portion of said current blocking layer is located beneath said first electrode extension portion and has a widened section having a width that gradually increases in a direction away from said first electrode pad, wherein said first strip portion of said current blocking layer further includes a pad-proximal section that is connected to said widened section and that is more proximal to said first electrode pad than said widened section, said pad-proximal section having a width W3 larger than a width W1 of a part of said first electrode extension portion positioned there above, said widened section having a width W4 lamer than a width W2 of a part of said first electrode extension portion positioned there above, a first width difference between the width W3 and the width W1 being less than a second width difference between the width W4 and the width W2, and wherein said second type semiconductor layer has a portion exposed from said first type semiconductor layer and said active layer, said light-emitting device further including a transparent conductive layer that is disposed on said exposed portion of said first type semiconductor layer and that is partially disposed between said current blocking layer and said first electrode; and a second electrode disposed on said exposed portion of said second type semiconductor layer. ### Claim 2 (depends on 1) The light-emitting device of claim 1, wherein the first width difference is constant. ### Claim 3 (depends on 1) The light-emitting device of claim 1, wherein the first width difference is not less than 5 μm and is up to 20 μm. ### Claim 4 (depends on 1) The light-emitting device of claim 1, wherein the second width difference is at least 1 μm larger than the first width difference. ### Claim 5 (depends on 1) The light-emitting device of claim 1, wherein the second width difference gradually increases in the direction away from said first electrode pad. ### Claim 6 (depends on 1) The light-emitting device of claim 1, wherein the second width difference gradually increases and then remains fixed in the direction away from said first electrode pad. ### Claim 7 (depends on 1) The light-emitting device of claim 1, wherein said first electrode extension portion includes a straight section that is connected to said first electrode pad and said first electrode end portion, said widened section of said first strip portion of said current blocking layer being located beneath said straight section. ### Claim 8 (depends on 1) The light-emitting device of claim 1, wherein said first electrode extension portion includes a straight section extending from said first electrode pad, and a curved section that extends from said straight section and that is connected to said first electrode end portion, said widened section of said first strip portion of said current blocking layer being located beneath said curved section. ### Claim 9 (depends on 8) The light-emitting device of claim 8, wherein at least one of said straight section and said curved section has a fixed width. ### Claim 10 (depends on 8) The light-emitting device of claim 8, wherein at least one of said straight section and said curved section has a width that gradually decreases in the direction away from said first electrode pad. ### Claim 11 (depends on 8) The light-emitting device of claim 8, wherein said widened section of said first strip portion of said current blocking layer is further located beneath a portion of said straight section of said first electrode extension portion. ### Claim 12 (depends on 11) The light-emitting device of claim 11, wherein said widened section of said first strip portion of said current blocking layer is further located beneath a position ranging from one half to one fourth of said straight section of said first electrode extension portion. ### Claim 13 (depends on 11) The light-emitting device of claim 11, wherein said widened section having a width that gradually increases in the direction away from said first electrode pad at position corresponding to said straight section of said first electrode extension portion and that remains fixed in the direction away from said first electrode pad at position corresponding to said curved section of said first electrode extension portion. ### Claim 14 (depends on 1) The light-emitting device of claim 1, wherein said first electrode extension portion includes a straight section that extends from said first electrode pad and a fold-line section that extends from said straight section and that is connected to said first electrode end portion, said widened section of said first strip portion of said current blocking layer being located beneath said fold-line section. ### Claim 15 (depends on 14) The light-emitting device of claim 14, wherein at least one of said straight section and said fold-line section has a fixed width. ### Claim 16 (depends on 14) The light-emitting device of claim 14, wherein said widened section of said first strip portion of said current blocking layer is located beneath a portion of said straight section of said first electrode extension portion.