# US 11,908,955 B2 · Schottky barrier diode

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- Number: US 11,908,955 B2
- Document ID: US11908955B2
- Status: Granted
- Kind: B2
- Application number: 17/802,438
- Filed: 2021-02-04
- Published: 2023-04-13
- Granted: 2024-02-20
- Earliest claimed: 2020-03-19
- Assignees: TDK Corporation
- Applicants: TDK Corporation
- Inventors: Jun Arima; Minoru Fujita; Jun Hirabayashi
- Web page: https://patentgrep.com/patent/US11908955B2

## CPC

- H10D 8/60: Schottky-barrier diodes
- H10D 8/605: {of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]}
- H10D 62/103: {for increasing or controlling the breakdown voltage of reverse-biased devices}
- H10D 62/104: {having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats}
- H10D 62/834: further characterised by the dopants
- H10D 64/00: Electrodes of devices having potential barriers
- H10D 62/80: characterised by the materials
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A Schottky barrier diode 1 includes: a semiconductor substrate made of gallium oxide; a drift layer made of gallium oxide; an anode electrode brought into Schottky contact with an upper surface of the drift layer; and a cathode electrode brought into ohmic contact with a lower surface of the semiconductor substrate. A ring-shaped outer peripheral trench is formed in the upper surface of the drift layer, and the anode electrode is partly filled in the outer peripheral trench. A ring-shaped back surface trench is formed in the lower surface of the semiconductor substrate such that the bottom thereof reaches the drift layer. This limits a current path to the area surrounded by the back surface trench, thereby mitigating electric field concentration in the vicinity of the bottom of the outer peripheral trench.

## Claims

### Claim 1

A Schottky barrier diode comprising:
a semiconductor substrate made of gallium oxide;
a drift layer made of gallium oxide, the drift layer having a lower surface contacting an upper surface of the semiconductor substrate and an upper surface positioned on a side opposite the lower surface, and the drift layer having a ring-shaped outer peripheral trench in the upper surface;
an anode electrode brought into Schottky contact with the upper surface of the drift layer surrounded by the outer peripheral trench and filled inside the outer peripheral trench through an insulating film; and
a cathode electrode brought into ohmic contact with a lower surface of the semiconductor substrate on a side opposite the upper surface thereof,
wherein a ring-shaped back surface trench is formed in the lower surface of the semiconductor substrate such that a bottom thereof reaches the drift layer,
wherein the cathode electrode is not present at a part of the lower surface of the semiconductor substrate that is outside an area surrounded by the back surface trench but is provided within the area surrounded by the back surface trench, and
wherein a part of the drift layer that is surrounded by the outer peripheral trench overlaps the area surrounded by the back surface trench in a plan view.

### Claim 2 (depends on 1)

The Schottky barrier diode as claimed in claim 1, wherein an inner peripheral wall of the back surface trench is positioned inside an outer peripheral wall of the outer peripheral trench in a plan view.

### Claim 3 (depends on 2)

The Schottky barrier diode as claimed in claim 2, wherein the inner peripheral wall of the back surface trench is positioned between inner and outer peripheral walls of the outer peripheral trench in a plan view.

### Claim 4 (depends on 1)

The Schottky barrier diode as claimed in claim 1, further comprising a field insulating film that covers the upper surface of the drift layer in a ring shape so as to surround the outer peripheral trench,
wherein an outer peripheral end of the anode electrode is positioned on the field insulating film.

### Claim 5 (depends on 1)

The Schottky barrier diode as claimed in claim 1, wherein the back surface trench is filled with an insulating material.

### Claim 6 (depends on 1)

The Schottky barrier diode as claimed in claim 1,
wherein a plurality of center trenches are formed on the upper surface of the drift layer so as to be surrounded by the outer peripheral trench, and
wherein the anode electrode is filled in the center trenches through an insulating film.