# US 11,908,945 B2 · Coating liquid for forming n-type oxide semiconductor film, method for producing n-type oxide semiconductor film, and method for producing field-effect transistor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,908,945 B2 - Document ID: US11908945B2 - Status: Granted - Kind: B2 - Application number: 15/759,698 - Filed: 2016-09-09 - Published: 2019-02-14 - Granted: 2024-02-20 - Earliest claimed: 2015-09-15 - Assignees: Ricoh Company, Ltd. - Applicants: Ricoh Company, Ltd. - Inventors: Naoyuki Ueda; Yuki Nakamura; Yukiko Abe; Shinji Matsumoto; Yuji Sone; Ryoichi Saotome; Sadanori Arae; Minehide Kusayanagi - Web page: https://patentgrep.com/patent/US11908945B2 ## CPC - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 30/6713: {characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes} - H10D 64/691: {comprising metallic compounds, e.g. metal oxides or metal silicates (insulators comprising nitrogen H10D64/693)} - H10D 99/00: Subject matter not provided for in other groups of this subclass - H10P 14/265: {using solutions} - H10P 14/3426: {Oxides} - H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)} - H10P 14/3442: {N-type} - H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) - H10D 62/80: characterised by the materials - H10P 14/3446: {Transition metal elements; Rare earth elements} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A coating liquid for forming an n-type oxide semiconductor film, the coating liquid including: a Group A element, which is at least one selected from the group consisting of Sc, Y, Ln, B, Al, and Ga; a Group B element, which is at least one of In and Tl; a Group C element, which is at least one selected from the group consisting of Group 4 elements, Group 5 elements, Group 6 elements, Group 7 elements, Group 8 elements, Group 9 elements, Group 10 elements, Group 14 elements, Group 15 elements, and Group 16 elements; and a solvent. ## Claims ### Claim 1 A coating liquid for forming a semiconductor oxide film comprising: a Group A element, which is a preventer from generation of oxygen vacancies, and which is at least one selected from the group consisting of Zr, Hf, Ce, Si, and Ge; a Group B element, which is a main constituting element of a bottom of a conduction band of the semiconductor oxide film, and which is at least one selected from the group consisting of Ti and Sn; a Group C element, which is a dopant, and which is at least one selected from the group consisting of Group 5 elements, Group 6 elements, Group 7 elements, Group 8 elements, Group 9 elements, Group 10 elements, Group 15 elements, and Group 16 elements; and a solvent, wherein a valence of the Group A element is the same as that of the Group B element; wherein the Group C element is at least one selected from the group consisting of V, Nb, Ta, Cr, Mo, W, Re, Ru, Os, Ir, Pt, Sb, Bi, Se, and Te, wherein the coating liquid does not include a Group 1 element, a Group 2 element, a Group 3 element, a Group 11 element, a Group 12 element, and a Group 13 element, except that Ce of the Group 3 elements may be present, and wherein a total number of atoms of the Group A element (NA) and a total number of atoms of the Group B element (NB) satisfy the following formula: 0.02≤[NA/NB]≤0.2. ### Claim 2 (depends on 1) The coating liquid according to claim 1, wherein the solvent comprises an organic solvent. ### Claim 3 (depends on 2) The coating liquid according to claim 2, wherein the organic solvent comprises at least one selected from the group consisting of organic acids, organic acid esters, aromatic compounds, dials, glycol ethers, and aprotic polar solvents. ### Claim 4 (depends on 1) A method for producing an n-type oxide semiconductor film, the method comprising: coating the coating liquid according to claim 1 on an object to be coated; and drying the object and baking the object after the drying. ### Claim 5 (depends on 1) A method for producing a field-effect transistor, the method comprising: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming a source electrode and a drain electrode on the gate insulating layer to be spaced from each other; and forming an active layer on the gate insulating layer, and in a channel region between the source electrode and the drain electrode, the active layer being formed of an n-type oxide semiconductor, wherein the forming the active layer is coating the coating liquid according to claim 1 on the gate insulating layer to form the active layer formed of the n-type oxide semiconductor. ### Claim 6 (depends on 5) A method for producing a field-effect transistor, the method comprising: forming a source electrode and a drain electrode on a substrate to be spaced from each other; forming an active layer on the substrate and in a channel region between the source electrode and the drain electrode, the active layer being formed of an n-type oxide semiconductor; forming a gate insulating layer on the active layer; and forming a gate electrode on the gate insulating layer, wherein the forming the active layer is coating the coating liquid according to claim 5 on the substrate to form the active layer formed of the n-type oxide semiconductor. ### Claim 7 (depends on 5) The method for producing a field-effect transistor according to claim 5, wherein; the forming the active layer comprises adjusting, in the coating liquid, a total number of atoms of the Group A (NA), a total number of atoms of the Group B (NB), and a total number of atoms of the Group C (NC) to control at least one selected from the group consisting of volume resistivity, carrier mobility, and carrier density of the n-type oxide semiconductor. ### Claim 8 (depends on 1) An n-type oxide semiconductor film, which is a baked product of the coating liquid according to claim 1. ### Claim 9 (depends on 8) A semiconductor element comprising an active layer including the n-type oxide semiconductor film according to claim 8. ### Claim 10 (depends on 9) The semiconductor element according to claim 9, wherein the semiconductor element is a diode. ### Claim 11 (depends on 8) A field-effect transistor comprising: a gate electrode; a source electrode and a drain electrode; an active layer formed between the source electrode and the drain electrode, and being formed of an n-type oxide semiconductor film; and a gate insulating layer formed between the gate electrode and the active layer, wherein the n-type oxide semiconductor film is the n-type oxide semiconductor film according to claim 8.