# US 11,908,943 B2 · Manganese-doped perovskite layers and semiconductor device incorporating same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,908,943 B2 - Document ID: US11908943B2 - Status: Granted - Kind: B2 - Application number: 18/181,426 - Filed: 2023-03-09 - Published: 2023-07-20 - Granted: 2024-02-20 - Earliest claimed: 2019-04-08 - Assignees: Kepler Computing Inc. - Applicants: Kepler Computing Inc. - Inventors: Ramesh Ramamoorthy; Sasikanth Manipatruni; Gaurav Thareja - Web page: https://patentgrep.com/patent/US11908943B2 ## CPC - H10D 30/6713: {characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes} - H10B 53/30: characterised by the memory core region - H10D 1/684: {the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers} - H10D 1/688: {comprising barrier layers to prevent diffusion of hydrogen or oxygen} - H10D 1/692: {Electrodes} - H10D 1/694: {comprising noble metals or noble metal oxides} - H10D 10/861: {having an emitter region comprising one or more non-monocrystalline elements of Group IV, e.g. amorphous silicon} - H10D 30/0415: {of FETs having ferroelectric gate insulators} - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN} - H10D 84/133: {the built-in components being capacitors or resistors} - H10B 12/312: {with a bit line higher than the capacitor} - H10B 12/36: {the transistor being a FinFET} - H10D 30/62: Fin field-effect transistors [FinFET] - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10B: ELECTRONIC MEMORY DEVICES ## Abstract The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a semiconductor device comprises a capacitor which in turn comprises a polar layer comprising a base polar material doped with a dopant. The base polar material includes one or more metal elements and one or both of oxygen or nitrogen. The dopant comprises a metal element that is different from the one or more metal elements and is present at a concentration such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV. The capacitor stack additionally comprises first and second crystalline conductive oxide electrodes on opposing sides of the polar layer. The capacitor stack further comprises first and second barrier metal layers on respective ones of the first and second crystalline conductive oxide electrodes on opposing sides of the polar layer. ## Claims ### Claim 1 An integrated circuit device, comprising: a capacitor comprising a ferroelectric or paraelectric oxide having a perovskite crystal structure between electrodes; and the perovskite crystal structure comprising: corner sites interchangeably occupied by one or more base corner elements and one or more dopant corner elements, and center sites interchangeably occupied by one or more base center elements and one or more dopant center elements, wherein the ferroelectric or paraelectric oxide has a composition gradient in a stacking direction of the capacitor. ### Claim 2 (depends on 1) The integrated circuit device of claim 1, wherein the base corner elements and the dopant corner elements have the same oxidation state. ### Claim 3 (depends on 2) The integrated circuit device of claim 2, wherein the base corner elements comprise one or both of Ba and Bi. ### Claim 4 (depends on 3) The integrated circuit device of claim 3, wherein the dopant corner elements comprise a metal selected from one of 4d series, 5d series, 4f series and 5f series that is different from the one or more base corner elements. ### Claim 5 (depends on 4) The integrated circuit device of claim 4, wherein the dopant corner elements comprise a lanthanide element. ### Claim 6 (depends on 1) The integrated circuit device of claim 1, wherein the ferroelectric or paraelectric oxide has a chemical formula represented by A(m-x)A′xB(n-y)B′yOz, wherein A represents the base corner elements, A′ represents the dopant corner elements, B represents the base center elements and B′ represents the dopant center elements, wherein m, n and z are integers, and wherein both of x and y are greater than zero. ### Claim 7 (depends on 6) The integrated circuit device of claim 6, wherein A comprises Bi. ### Claim 8 (depends on 6) The integrated circuit device of claim 6, wherein A′ comprises La. ### Claim 9 (depends on 6) The integrated circuit device of claim 6, wherein B comprises Fe. ### Claim 10 (depends on 6) The integrated circuit device of claim 6, wherein B′ comprises at least Mn. ### Claim 11 (depends on 1) The integrated circuit device of claim 1, wherein upon application of a bias between the electrodes, the capacitor exhibits an altered leakage current relative to a reference capacitor that is arranged to be the same as the capacitor except for the presence of the dopant center elements and placed under the same bias. ### Claim 12 (depends on 1) The integrated circuit device of claim 1, wherein the composition gradient includes a gradient in concentration of the one or more dopant corner elements. ### Claim 13 (depends on 1) The integrated circuit device of claim 1, wherein the composition gradient includes a gradient in concentration of the one or more dopant center elements. ### Claim 14 An integrated circuit device, comprising: a capacitor comprising a ferroelectric or paraelectric oxide having a perovskite crystal structure between electrodes; and the perovskite crystal structure comprising: corner sites occupied by at least one or more base corner elements, wherein the base corner elements comprise one or both of Ba and Bi, and center sites interchangeably occupied by one or more base center elements and one or more dopant center elements comprising at least manganese (Mn). ### Claim 15 (depends on 14) The integrated circuit device of claim 14, wherein the corner sites are interchangeably occupied by the one or more base corner elements and one or more dopant corner elements. ### Claim 16 (depends on 14) The integrated circuit device of claim 14, wherein the ferroelectric or paraelectric oxide has a composition gradient in a stacking direction of the capacitor. ### Claim 17 (depends on 16) The integrated circuit device of claim 16, wherein the composition gradient comprises a gradient in concentration of the one or more dopant corner elements. ### Claim 18 (depends on 16) The integrated circuit device of claim 16, wherein the composition gradient comprises a gradient in concentration of the one or more dopant center elements. ### Claim 19 (depends on 15) The integrated circuit device of claim 15, wherein the base corner elements and the dopant corner elements have the same oxidation state. ### Claim 20 (depends on 19) The integrated circuit device of claim 19, wherein the ferroelectric or paraelectric oxide comprises a base oxide doped with the dopant corner elements and the dopant center elements, wherein the base oxide comprises one or both of BiFeO3 and BaTiO3. ### Claim 21 (depends on 20) The integrated circuit device of claim 20, wherein the dopant corner elements comprise a lanthanide element. ### Claim 22 (depends on 14) The integrated circuit device of claim 14, wherein the electrodes are crystalline conductive oxide electrodes. ### Claim 23 An integrated circuit device, comprising: a capacitor comprising a ferroelectric or paraelectric oxide having a perovskite crystal structure between electrodes; and the perovskite crystal structure comprising: corner sites interchangeably occupied by one or more base corner elements and one or more dopant corner elements, and center sites interchangeably occupied by one or more base center elements and one or more dopant center elements, wherein the dopant center elements comprise at least manganese (Mn). ### Claim 24 (depends on 23) The integrated circuit device of claim 23, wherein the one or more base corner elements comprise one or both of Ba and Bi. ### Claim 25 (depends on 24) The integrated circuit device of claim 24, wherein the ferroelectric or paraelectric oxide comprises a base oxide doped with the dopant corner elements and the dopant center elements, wherein the base oxide comprises one or both of BiFeO3 and BaTiO3. ### Claim 26 (depends on 24) The integrated circuit device of claim 24, wherein the dopant corner elements comprise a metal selected from one of 4d series, 5d series, 4f series or 5f series that is different from the one or more base corner elements. ### Claim 27 (depends on 26) The integrated circuit device of claim 26, wherein the dopant corner elements comprise a lanthanide element. ### Claim 28 (depends on 26) The integrated circuit device of claim 26, wherein the ferroelectric or paraelectric oxide has a chemical formula represented by A(m-x)A′xB(n-y)B′yO3, wherein: A is Ba or Bi; A′ is the metal selected from one of 4d series, 5d series, 4f series or 5f series; B is Fe when the A is Bi, and Ti when the A is Ba; and B′ comprises the at least Mn, wherein m and n are integers, and wherein one or both of x and y are greater than zero. ### Claim 29 (depends on 23) The integrated circuit device of claim 23, wherein the ferroelectric or paraelectric oxide has a composition gradient in a stacking direction of the capacitor. ### Claim 30 (depends on 29) The integrated circuit device of claim 29, wherein the composition gradient comprises a gradient in concentration of the one or more dopant corner elements or a gradient in concentration of the one or more dopant center elements.