# US 11,908,926 B2 · Assembling of molecules on a 2D material and an electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,908,926 B2 - Document ID: US11908926B2 - Status: Granted - Kind: B2 - Application number: 18/105,497 - Filed: 2023-02-03 - Published: 2023-06-15 - Granted: 2024-02-20 - Earliest claimed: 2017-12-22 - Assignees: Graphensic AB - Applicants: Graphensic AB - Inventors: Samuel Lara-Avila; Hans He; Sergey Kubatkin - Web page: https://patentgrep.com/patent/US11908926B2 ## CPC - C01B 32/182: Graphene - H10D 48/362: {Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]} - C01B 32/188: by epitaxial growth - C01B 32/194: After-treatment - H10D 30/014: {of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors} - H10D 62/882: {Graphene} - H10N 52/101: {Semiconductor Hall-effect devices} - H10P 32/1408: {from or through or into an external applied layer, e.g. photoresist or nitride layers} - H10P 32/171: {being group IV material} - H10P 95/92: {Formation of n- or p-type semiconductors, e.g. doping of graphene} - B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic - B82Y 40/00: Manufacture or treatment of nanostructures - H10P 14/2904: {Silicon carbide} - H10P 14/3406: {Carbon, e.g. diamond-like carbon} - H10P 14/38: {characterised by treatments done after the formation of the materials} - C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ## Abstract The present invention relates to a method for assembling molecules on the surface of a two-dimensional material formed on a substrate, the method comprises: forming a spacer layer comprising at least one of an electrically insulating compound or a semiconductor compound on the surface of the two-dimensional material, depositing molecules on the spacer layer, annealing the substrate with spacer layer and the molecules at an elevated temperature for an annealing time duration, wherein the temperature and annealing time are such that at least a portion of the molecules are allowed to diffuse through the spacer layer towards the surface of the two-dimensional material to assemble on the surface of the two-dimensional material. The invention also relates to an electronic device. ## Claims ### Claim 1 An electronic device comprising: a substrate; a two-dimensional material formed on the substrate; a spacer layer comprising at least one of an electrically insulating compound or a semiconductor compound on the surface of the two-dimensional material; a first layer of electrically insulating compound and dopant molecules formed on the spacer layer; an encapsulation layer comprising at least one of an electrically insulating compound or a semiconductor compound formed on the first layer comprising the dopant molecules; a metal layer formed on the encapsulation layer, wherein a layer of dopant molecules of a same species as the dopant molecules in the first layer is assembled on the two-dimensional material to cause doping of the two-dimensional material, where a concentration of dopant molecules varies from inside the first layer of electrically insulating compound and dopant molecules through the spacer layer to the two-dimensional material. ### Claim 2 (depends on 1) The electronic device according to claim 1, wherein the two-dimensional material is epitaxial graphene. ### Claim 3 (depends on 1) The electronic device according to claim 1, wherein the substrate is silicon-carbide. ### Claim 4 (depends on 1) The electronic device according to claim 1, comprising four connection pads connected to the two-dimensional material, wherein two of the connection pads are arranged as input ports for providing an electric current to the two-dimensional material, and wherein the other two connection pads are arranged as output ports for sensing a voltage across the two-dimensional material in response to an input signal acting on the two-dimensional material. ### Claim 5 (depends on 4) The electronic device according to claim 4, wherein the metal layer is configured as a gate for providing electrostatic gating of the doped two-dimensional material. ### Claim 6 (depends on 1) The electronic device according to claim 1, wherein the electronic device is a quantum resistance standard device. ### Claim 7 (depends on 1) The electronic device according to claim 1, wherein the thickness of the spacer layer is at least 5 nm. ### Claim 8 (depends on 1) The electronic device according to claim 1, wherein the molecular dopant is at least one of Tetrafluoro-tetracyanoquinodimethane (F4TCNQ) and/or tetracyanoquinodimethane (TCNQ). ### Claim 9 (depends on 1) The electronic device according to claim 1, wherein the molecules are molecular dopants that have diffused through the spacer layer towards the surface of the two-dimensional material to assemble on the surface of the two-dimensional material to thereby dope the two-dimensional material. ### Claim 10 (depends on 1) The electronic device according to claim 1, wherein the electrically insulating compound is a polymer comprising poly(methyl methacrylate) (PMMA), MMA, or a combination thereof. ### Claim 11 (depends on 1) The electronic device according to claim 1, wherein the spacer layer encapsulates the two-dimensional material on the substrate. ### Claim 12 (depends on 4) The electronic device according to claim 4, wherein the electronic device is a Hall bar.