# US 11,908,917 B2 · Gate structures

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- Number: US 11,908,917 B2
- Document ID: US11908917B2
- Status: Granted
- Kind: B2
- Application number: 17/404,499
- Filed: 2021-08-17
- Published: 2021-12-02
- Granted: 2024-02-20
- Earliest claimed: 2019-10-11
- Assignees: Globalfoundries Inc.
- Applicants: Globalfoundries U.S. Inc.
- Inventors: Jiehui Shu; Sipeng Gu; Haiting Wang
- Web page: https://patentgrep.com/patent/US11908917B2

## CPC

- H10D 64/671: {the conductor having lateral variation in doping or structure}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 64/01: Manufacture or treatment
- H10D 64/017: {using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes}
- H10D 84/834: {comprising FinFETs}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 64/669: {the conductor further comprising additional layers of alloy material, compound material or organic material, e.g. TaN/TiAlN}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The present disclosure generally relates to semiconductor structures and, more particularly, to gate structures and methods of manufacture. The method includes: forming a first gate structure and a second gate structure with gate materials; etching the gate materials within the second gate structure to form a trench; and depositing a conductive material within the trench so that the second gate structure has a metal composition different than the first gate structure.

## Claims

### Claim 1

A structure, comprising:
a first gate structure, a second gate structure, and a third gate structure, the second gate structure being positioned between and abutting the first gate structure and the third gate structure; and
conductive materials in the first, second, and third gate structures, the conductive materials of the second gate structure being different than the first gate structure and the third gate structure,
wherein the conductive materials comprise different materials from the first gate structure, the second gate structure, and the third gate structure, the conductive materials of the first gate structure and the third gate structure are over device regions, and the second gate structure is formed over a non-device region.

### Claim 2 (depends on 1)

The structure of claim 1, wherein the second gate structure comprise gate materials with different thicknesses than the gate materials of the third gate structure.

### Claim 3 (depends on 1)

The structure of claim 1, further comprising device regions, wherein the conductive materials of the first gate structure and the third gate structure surround the device regions.

### Claim 4 (depends on 3)

The structure of claim 3, wherein the conductive materials of the second gate structure is between the device regions.

### Claim 5 (depends on 1)

The structure of claim 1, wherein the device regions are fin structures comprised of a substrate material.

### Claim 6 (depends on 5)

The structure of claim 5, wherein the non-device region is a shallow trench isolation (STI) region.

### Claim 7 (depends on 6)

The structure of claim 6, further comprising a gate contact on an upper surface of the conductive materials of the second gate structure.

### Claim 8 (depends on 7)

The structure of claim 7, wherein the gate contact includes a metal seed and protection layer on the upper surface of the conductive materials of the second gate structure.

### Claim 9 (depends on 8)

The structure of claim 8, further comprising another conductive material on an upper surface of the metal seed and protection layer.

### Claim 10 (depends on 9)

The structure of claim 9, wherein the second gate structure comprise gate materials with different thicknesses than the gate materials of the first and third gate structure.

### Claim 11 (depends on 10)

The structure of claim 10, wherein the gate contact is over the non-device region.

### Claim 12 (depends on 11)

The structure of claim 11, wherein the gate contact has a metal composition different than the second gate structure.

### Claim 13 (depends on 1)

The structure of claim 1, wherein the second gate structure comprise gate materials with different thicknesses than the gate materials of the first gate structure.

### Claim 14 (depends on 13)

The structure of claim 13, wherein the conductive materials are formed within a trench of the second gate structure.

### Claim 15 (depends on 14)

The structure of claim 14, wherein the conductive materials are over metal gate materials of the first gate structure such that the second gate structure has a metal composition different than the first gate structure.

### Claim 16 (depends on 15)

The structure of claim 15, wherein the metal gate materials in the first gate structure occupies at least half a width of the first gate structure.

### Claim 17 (depends on 1)

The structure of claim 1, wherein the device regions include an active region of a planar structure.

### Claim 18

A structure, comprising:
a first gate structure, a second gate structure, and a third gate structure, the second gate structure being positioned between and abutting the first gate structure and the third gate structure; and
conductive materials in the first, second, and third gate structures, the conductive materials of the second gate structure being different than the first gate structure and the third gate structure,
wherein the second gate structure comprise gate materials with different thicknesses than the gate materials of the first and third gate structure and wherein the conductive materials of the first gate structure and the third gate structure are over device regions, and the second gate structure is formed over a non-device region.