# US 11,908,902 B2 · Group III nitride laminate, semiconductor element, and method for producing group III nitride laminate

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- Number: US 11,908,902 B2
- Document ID: US11908902B2
- Status: Granted
- Kind: B2
- Application number: 17/369,807
- Filed: 2021-07-07
- Published: 2022-01-27
- Granted: 2024-02-20
- Earliest claimed: 2020-07-08
- Assignees: Sumitomo Chemical Company, Limited
- Applicants: Sumitomo Chemical Company, Limited
- Inventors: Hajime Fujikura; Taichiro Konno; Takeshi Kimura; Osamu Goto
- Web page: https://patentgrep.com/patent/US11908902B2

## CPC

- H10D 62/824: comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
- H10D 62/854: further characterised by the dopants
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/2926: {Crystal orientations}
- H10P 14/3216: {Nitrides}
- H10P 14/3251: {consisting of three or more layers}
- H10P 14/3258: {Crystal orientation}
- H10P 14/3416: {Nitrides}
- H10P 14/38: {characterised by treatments done after the formation of the materials}
- H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10P 14/2904: {Silicon carbide}
- H10P 14/2921: {being crystalline insulating materials}
- H10P 14/3458: {Monocrystalline}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Provided is a group III nitride laminate for improving device characteristics, including: an underlying substrate; a first layer that is formed on the underlying substrate and is made of aluminum nitride; and a second layer that is formed on the first layer and is made of gallium nitride, wherein the first layer has a thickness of more than 100 nm and 1 μm or less, a full width at half maximum of (0002) diffraction determined through X-ray rocking curve analysis is 250 seconds or less, and a full width at half maximum of (10-12) diffraction determined through X-ray rocking curve analysis is 500 seconds or less.

## Claims

### Claim 1

A group III nitride laminate, comprising:
an underlying substrate, which is a silicon carbide substrate or a sapphire substrate,
a first layer including aluminum nitride provided on the underlying substrate, and
a second layer including gallium nitride provided on the first layer;
wherein, in the first layer, a thickness is more than 100 nm and 1 μm or less, a full width at half maximum of (0002) diffraction determined through X-ray rocking curve analysis is 250 arcseconds or less, and a full width at half maximum of (10-12) diffraction determined through X-ray rocking curve analysis is 500 arcseconds or less.

### Claim 2 (depends on 1)

The group III nitride laminate according to claim 1,
wherein a thickness of the second layer is less than 1 μm, and a dislocation density on a main surface of the second layer is 5×108 cm−2 or less.

### Claim 3 (depends on 1)

The group III nitride laminate according to claim 1,
wherein, in the second layer, the thickness is less than 1 μm, the full width at half maximum of (0002) diffraction determined through X-ray rocking curve analysis is 200 arcseconds or less, and the full width at half maximum of (10-12) diffraction determined through X-ray rocking curve analysis is 400 arcseconds or less.

### Claim 4 (depends on 1)

The group III nitride laminate according to claim 1,
wherein an oxygen concentration in the second layer is 1×1016 cm−3 or less throughout the second layer.

### Claim 5 (depends on 1)

The group III nitride laminate according to claim 1,
wherein a silicon concentration in the second layer is 1×1016 cm−3 or less throughout the second layer.

### Claim 6 (depends on 1)

The group III nitride laminate according to claim 1,
wherein each of an iron concentration and a carbon concentration in the second layer is 1×1016 cm−3 or less.

### Claim 7 (depends on 1)

The group III nitride laminate according to claim 1,
wherein, in the first layer, the thickness is 200 nm or more and 700 nm or less, the full width at half maximum of (0002) diffraction determined through X-ray rocking curve analysis is 200 arcseconds or less, and the full width at half maximum of (10-12) diffraction determined through X-ray rocking curve analysis is 400 arcseconds or less.

### Claim 8 (depends on 1)

The group III nitride laminate according to claim 1,
further comprising a third layer which is provided on the second layer and includes group III nitride having a band gap wider than that of gallium nitride.

### Claim 9 (depends on 1)

A semiconductor element, comprising:
the second layer included in the group III nitride laminate according to claim 1 as at least a part of semiconductor layer.

### Claim 10

A group III nitride laminate, comprising:
an underlying substrate, which is a silicon carbide substrate or a sapphire substrate, and
a first layer including aluminum nitride provided on the underlying substrate,
wherein, in the first layer, a thickness is more than 100 nm and 1 μm or less, a full width at half maximum of (0002) diffraction determined through X-ray rocking curve analysis is 250 arcseconds or less, and a full width at half maximum of (10-12) diffraction determined through X-ray rocking curve analysis is 500 arcseconds or less.

### Claim 11 (depends on 1)

The group III nitride laminate according to claim 1, wherein the first layer and the second layer have a crystal strain.

### Claim 12 (depends on 1)

The group III nitride laminate according to claim 1, wherein the underlying substrate is a silicon carbide substrate, and the first layer and the second layer have a tensile strain in a <11-20> axis direction.

### Claim 13 (depends on 1)

The group III nitride laminate according to claim 1, wherein the underlying substrate is a sapphire substrate, and the first layer and the second layer have a compressive strain in a <11-20> axis direction.