# US 11,908,894 B2 · Deformable electronic device and method of making a deformable electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,908,894 B2 - Document ID: US11908894B2 - Status: Granted - Kind: B2 - Application number: 17/226,331 - Filed: 2021-04-09 - Published: 2021-10-14 - Granted: 2024-02-20 - Earliest claimed: 2020-04-10 - Assignees: The Board of Trustees of the University of Illinois - Applicants: The Board of Trustees of the University of Illinois - Inventors: Pinshane Huang; Arend van der Zande; Elif Ertekin; Edmund Han; Jaehyung Yu; Mohammad Abir Hossain - Web page: https://patentgrep.com/patent/US11908894B2 ## CPC - H10D 62/124: {Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions} - H10D 48/362: {Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]} - H10D 62/80: characterised by the materials - H10D 62/86: being Group II-VI materials, e.g. ZnO - H10D 62/882: {Graphene} - B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic - H10D 10/00: Bipolar junction transistors [BJT] - H10D 30/47: having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT] - H10D 62/82: Heterojunctions - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ## Abstract A method of making a deformable electronic device comprises forming a multilayer device structure comprising functional layers on a flexible substrate. At least one, some or all of the functional layers comprises a stack of 2D monolayers, and a number or proportion of misaligned interfaces within each stack of 2D monolayers is controlled to obtain a predetermined bending stiffness. Each of the misaligned interfaces comprises a twist angle and/or lattice mismatch between adjacent 2D monolayers. The functional layers may include electronically active layers and other layers having a dielectric, insulating, and/or protective function. ## Claims ### Claim 1 A deformable electronic device comprising: a multilayer device structure comprising: functional layers on a flexible polymeric substrate, each of the functional layers comprising one or more 2D monolayers, the functional layers including electronically active layers and other layers having a dielectric, insulating and/or protective function; and a misaligned interface comprising a twist angle between adjacent functional layers, wherein the other layers include first and second encapsulation layers and a dielectric layer, and wherein at least one of the other layers comprises a stack of 2D monolayers, and wherein each stack of 2D monolayers includes at least one misaligned interface, the at least one misaligned interface comprising a twist angle and/or lattice mismatch between adjacent 2D monolayers. ### Claim 2 (depends on 1) The deformable electronic device of claim 1, wherein the twist angle lies in a range from about 0.1° to about 180°. ### Claim 3 (depends on 1) The deformable electronic device of claim 1, wherein the multilayer device structure includes a plurality of the misaligned interfaces. ### Claim 4 (depends on 1) The deformable electronic device of claim 1, wherein the one or more 2D monolayers of each of the functional layers comprise one or more 2D materials selected from the group consisting of: graphene, silicene, germanene, phosphorene, a transition metal dichalcogenide, MoS2, WS2, MoSe2, WSe2, MoTe2, a semiconducting metal dichalcogenide, SnS2, SnSe2, h-BN, BeO, a transition metal oxide, MnO2, ZnO, a transition metal carbide, a transition metal carbonitride, Bi2Se3, and Sb2Te3. ### Claim 5 (depends on 1) The deformable electronic device of claim 1, wherein each stack of 2D monolayers includes at least five misaligned interfaces within the stack, each of the at least five misaligned interfaces comprising a twist angle and/or lattice mismatch between adjacent 2D monolayers. ### Claim 6 A deformable electronic device comprising: a multilayer device structure comprising functional layers on a flexible polymeric substrate, the functional layers including electronically active layers and other layers having a dielectric, insulating and/or protective function, at least one of the other layers comprising a stack of 2D monolayers, wherein each stack of 2D monolayers includes at least five misaligned interfaces within the stack, each of the at least five misaligned interfaces comprising a twist angle and/or lattice mismatch between adjacent 2D monolayers. ### Claim 7 (depends on 6) The deformable electronic device of claim 6, wherein a proportion or number of misaligned interfaces within each stack is controlled to obtain a predetermined bending stiffness. ### Claim 8 (depends on 7) The deformable electronic device of claim 7, wherein the proportion is at least about 0.3. ### Claim 9 (depends on 8) The deformable electronic device of claim 8, wherein the proportion is between 0.5 and 1.0. ### Claim 10 (depends on 6) The deformable electronic device of claim 6, wherein each of the other layers has a thickness in a range from about 3 nm to about 100 nm. ### Claim 11 (depends on 6) The deformable electronic device of claim 6, wherein at least one of the other layers further comprises a 3D film, the stack of 2D monolayers being positioned adjacent to or within the 3D film. ### Claim 12 (depends on 6) The deformable electronic device of claim 6, wherein the electronically active layers include a gate electrode, a channel, a source electrode, and/or a drain electrode, and wherein the other layers include first and second encapsulation layers and a dielectric layer, the deformable electronic device comprising a field effect transistor. ### Claim 13 (depends on 6) The deformable electronic device of claim 6, wherein the stack of 2D monolayers comprises one or more 2D materials selected from the group consisting of: graphene, silicene, germanene, phosphorene, a transition metal dichalcogenide, MoS2, WS2, MoSe2, WSe2, MoTe2, a semiconducting metal dichalcogenide, SnS2, SnSe2, h-BN, BeO, a transition metal oxide, MnO2, ZnO, a transition metal carbide, a transition metal carbonitride, Bi2Se3, and Sb2Te3. ### Claim 14 (depends on 6) The deformable electronic device of claim 6, wherein each of the functional layers comprises one or more 2D monolayers, and further comprising a misaligned interface comprising a twist angle between adjacent functional layers. ### Claim 15 (depends on 6) The deformable electronic device of claim 6, wherein the multilayer device structure is crumpled.