# US 11,908,887 B2 · Capacitor and semiconductor device including the same

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- Number: US 11,908,887 B2
- Document ID: US11908887B2
- Status: Granted
- Kind: B2
- Application number: 17/307,592
- Filed: 2021-05-04
- Published: 2022-05-05
- Granted: 2024-02-20
- Earliest claimed: 2020-10-29
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Jaeho Lee; Boeun Park; Younggeun Park; Jooho Lee
- Web page: https://patentgrep.com/patent/US11908887B2

## CPC

- H10D 1/684: {the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers}
- H10B 53/00: Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10D 1/696: {comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

Provided are a capacitor and a semiconductor device including the capacitor. The capacitor includes a first electrode; a plurality of dielectric films on the first electrode in a sequential series, the plurality of dielectric layers having different conductances from each other; and a second electrode on the plurality of dielectric films, wherein the capacitor has a capacitance which converges to a capacitance of one of the plurality of dielectric films.

## Claims

### Claim 1

A capacitor comprising:
a first electrode;
a plurality of dielectric films on the first electrode in a sequential series, the plurality of dielectric films having different conductances from each other; and
a second electrode on the plurality of dielectric films,
wherein the plurality of dielectric films are configured such that
the capacitor has a first capacitance,
a capacitance across a dielectric film having the smallest conductance, among the plurality of dielectric films, is a second capacitance,
the smallest conductance is less than or equal to a tenth ( 1/10) a conductance of each of a remainder of the plurality of dielectric films, and
a difference in capacitance between the first capacitance and the second capacitance is less than a difference in capacitance between the first capacitance and a capacitance of each of the remainder of the plurality of dielectric films.

### Claim 2 (depends on 1)

The capacitor of claim 1, wherein a dielectric constant of the dielectric film having the smallest conductance is greater than a dielectric constant of at least one of the remainder of the plurality of dielectric films.

### Claim 3 (depends on 1)

The capacitor of claim 1, wherein a dielectric constant of the dielectric film having the smallest conductance among the plurality of dielectric films is 30 or more.

### Claim 4 (depends on 1)

The capacitor of claim 1, wherein the dielectric film having the smallest conductance includes at least one of a perovskite structure, a ferroelectric material, a paraelectric material, or an antiferroelectric material.

### Claim 5 (depends on 1)

The capacitor of claim 1, wherein the capacitance of the capacitor is 10% or greater than the second capacitance across the dielectric film having the smallest conductance among the plurality of dielectric films.

### Claim 6 (depends on 1)

The capacitor of claim 1, wherein a thickness of the dielectric film having the smallest conductance has a greater effect on the capacitance of the capacitor than a thickness of a dielectric film having the largest conductance among the plurality of dielectric films.

### Claim 7 (depends on 1)

The capacitor of claim 1, wherein a thickness of the dielectric film having the smallest conductance is 4 nm or less.

### Claim 8 (depends on 1)

The capacitor of claim 1, wherein a thickness of a dielectric film having the largest conductance among the plurality of dielectric films is 2 nm or less.

### Claim 9 (depends on 1)

The capacitor of claim 1, wherein a thickness of the capacitor is 5 nm or less.

### Claim 10 (depends on 1)

The capacitor of claim 1, wherein a difference in conductance between a dielectric film having a largest conductance and the dielectric film having the smallest conductance is 100 times or more.

### Claim 11 (depends on 1)

The capacitor of claim 1, further comprising:
a first insertion film,
wherein the plurality of dielectric films include a first, second, and third dielectric film, and
the first insertion film is between the second and the third dielectric film.

### Claim 12 (depends on 11)

The capacitor of claim 11, wherein the second and the third dielectric films directly contact the first insertion film.

### Claim 13 (depends on 11)

The capacitor of claim 11, wherein a thickness of the first insertion film is less than twice a thickness of an atomic layer included in the first insertion film.

### Claim 14 (depends on 11)

The capacitor of claim 11, wherein the second and the third dielectric films comprise the same material.

### Claim 15 (depends on 11)

The capacitor of claim 11, wherein the first and the second dielectric films are in direct contact and include different materials from each other.

### Claim 16 (depends on 11)

The capacitor of claim 11, further comprising:
a second insertion film between the first and the second dielectric films.

### Claim 17 (depends on 1)

A semiconductor device comprising:
a transistor; and
the capacitor according to claim 1 electrically connected to the transistor.