# US 11,908,886 B2 · Power converter embodied in a semiconductor substrate member > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,908,886 B2 - Document ID: US11908886B2 - Status: Granted - Kind: B2 - Application number: 18/169,730 - Filed: 2023-02-15 - Published: 2023-08-31 - Granted: 2024-02-20 - Earliest claimed: 2018-02-11 - Assignees: Danmarks Tekniske Universitet - Applicants: Danmarks Tekniske Universitet - Inventors: A. A. Nour Yasser; Hoa Le Thanh - Web page: https://patentgrep.com/patent/US11908886B2 ## CPC - H01F 27/28: Coils; Windings; Conductive connections - H10D 1/20: Inductors - H01F 17/02: without magnetic core - H01F 17/04: with magnetic core - H01F 17/062: {Toroidal core with turns of coil around it} - H01F 27/255: made from particles (H01F27/26 takes precedence) - H01F 27/348: {Preventing eddy currents} - H02M 3/156: with automatic control of output voltage or current, e.g. switching regulators - H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] - H10W 20/497: {Inductive arrangements or effects of, or between, wiring layers} - H01F 2017/002: {Details of via holes for interconnecting the layers} - H01F 2017/0086: {on semiconductor substrate} - H10D 1/692: {Electrodes} - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A power converter is embodied on a semiconductor substrate member and has a first region with a passive electrical component with a first electrically conductive layer pattern of an electrically conductive material and a second electrically conductive layer pattern of an electrically conductive material deposited on respective sides of the semiconductor substrate member. A trench or through-hole is formed (by etching) in the substrate within the first region, and the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern and the second conductive layer pattern. A second region has an active semiconductor component integrated with the semiconductor substrate by being fabricated by a semiconductor fabrication process. There is also provided a power supply, such as a DC-DC converter, embedded the semiconductor substrate member. ## Claims ### Claim 1 A power converter comprising a semiconductor substrate member comprising: a first region with at least one passive electrical component with a first electrically conductive layer pattern of a first electrically conductive material and a second electrically conductive layer pattern of a second electrically conductive material, wherein the second electrically conductive material is the same material as the first electrically conductive material or a different electrically conductive material, wherein a trench or through-hole is formed in the semiconductor substrate member within the first region, and wherein the first electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern and the second conductive layer pattern; a second region with at least one active semiconductor component, said at least one active semiconductor component comprising a control part of a DC-DC power converter, embedded and fully integrated in the semiconductor substrate member by a semiconductor fabrication process, wherein the semiconductor fabrication process is a silicon fabrication process; wherein the at least one passive electrical component is adapted and electrically connected to the active semiconductor component to provide power converter functionality; wherein the power converter is embedded in a single semiconductor substrate piece by a semiconductor manufacturing process; and wherein the first electrically conductive layer pattern of the first electrically conductive material and the second electrically conductive layer pattern of the second electrically conductive material are deposited on respective sides of the semiconductor substrate member, which are at a respective top side and bottom side of the semiconductor substrate member, wherein the first electrically conductive layer pattern and the second electrically conductive layer pattern extend in parallel horizontal planes at the top side and bottom side of the semiconductor substrate member, respectively, between the first region and the second region to connect the at least one passive electrical component with the at least one active semiconductor component. ### Claim 2 (depends on 1) The power converter according to claim 1, wherein one or both of the first electrically conductive layer pattern and the second electrically conductive layer pattern comprises at least one pad portion which is exposed for electrical connection by soldering, wire bonding or flip-chip bonding. ### Claim 3 (depends on 2) The power converter according to claim 2, wherein one or both of the first electrically conductive layer pattern and the second electrically conductive layer pattern comprises a portion, extending from or to the at least one pad portion, which is covered by an isolation layer. ### Claim 4 (depends on 1) The power converter according to claim 1, further comprising one or more discrete components, the discrete components comprising being surface mounted additional passive components and/or active components. ### Claim 5 (depends on 4) The power converter according to claim 4, wherein: one or both of the first electrically conductive layer pattern and the second electrically conductive layer pattern comprises at least one pad portion which is exposed for electrical connection by soldering, wire bonding or flip-chip bonding; and the one or more discrete components are connected to the at least one pad portion. ### Claim 6 (depends on 5) The power converter according to claim 5, wherein the one or more discrete components are connected to the at least one pad portion by surface-mount soldering. ### Claim 7 (depends on 1) The power converter according to claim 1, wherein the at least one active semiconductor component comprises a capacitor embedded in the semiconductor substrate member by a semiconductor fabrication process. ### Claim 8 (depends on 1) The power converter according to claim 1, wherein the at least one active semiconductor component comprises one or more field effect transistors and/or one or more gate drives and/or one or more diodes. ### Claim 9 (depends on 1) The power converter according to claim 1, wherein the at least one active semiconductor component comprises an array of semiconductor components. ### Claim 10 (depends on 1) The power converter according to claim 1, wherein the power converter comprises a DC-DC converter. ### Claim 11 (depends on 1) The power converter according to claim 1, wherein the power converter comprises a power amplifier. ### Claim 12 A stack of semiconductor substrate members comprising at least a first semiconductor substrate member and a second semiconductor substrate member, each comprising; a first region with at least one passive electrical component with a first electrically conductive layer pattern of a first electrically conductive material and a second electrically conductive layer pattern of a second electrically conductive material, wherein a trench or through-hole is formed in the semiconductor substrate member within the first region, and wherein the first electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern and the second conductive layer pattern; a second region with at least one active semiconductor component, said at least one active semiconductor component being a control part of a DC-DC power converter, embedded and fully integrated in the semiconductor substrate member by a semiconductor fabrication process, wherein the semiconductor fabrication process is a silicon fabrication process, wherein the at least one passive electrical component is adapted and electrically connected to the active semiconductor component to provide power converter functionality, wherein the power converter is embedded in a single semiconductor substrate piece by a semiconductor manufacturing process, wherein the first electrically conductive layer pattern of the first electrically conductive material and the second electrically conductive layer pattern of the second electrically conductive material are deposited on respective sides of the semiconductor substrate member, which are at a respective top side and bottom side of the semiconductor substrate member, and wherein the first electrically conductive layer pattern and the second electrically conductive layer pattern extend in parallel horizontal planes at the top side and bottom side of the semiconductor substrate member, respectively, between the first region and the second region to connect the at least one passive electrical component with the at least one active semiconductor component. ### Claim 13 (depends on 12) The stack of semiconductor substrate members according to claim 12, wherein the semiconductor substrate members comprise pad portions on top side and bottom side for connecting the semiconductor substrate members to each other.