# US 11,908,885 B2 · Semiconductor device structure with magnetic element > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,908,885 B2 - Document ID: US11908885B2 - Status: Granted - Kind: B2 - Application number: 17/739,487 - Filed: 2022-05-09 - Published: 2022-08-18 - Granted: 2024-02-20 - Earliest claimed: 2018-06-28 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company, Ltd. - Inventors: Chin-Yu Ku; Chi-Cheng Chen; Hon-Lin Huang; Wei-Li Huang; Chun-Yi Wu; Chen-Shien Chen - Web page: https://patentgrep.com/patent/US11908885B2 ## CPC - H10D 1/20: Inductors - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation element over the magnetic element. The i magnetic element is wider than the isolation element. The semiconductor device structure further includes a conductive line over the isolation element. ## Claims ### Claim 1 A semiconductor device structure, comprising: a substrate; a magnetic element over the substrate; an isolation element over the magnetic element, wherein the magnetic element is wider than the isolation element; a conductive line over the isolation element; a second isolation element extending across the magnetic element, wherein the second isolation element partially covers the top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element; and a second conductive line over the second isolation element. ### Claim 2 (depends on 1) The semiconductor device structure as claimed in claim 1, wherein opposite edges of the conductive line are laterally between opposite edges of the isolation element. ### Claim 3 (depends on 1) The semiconductor device structure as claimed in claim 1, wherein the isolation element extends along sidewalls of the magnetic element. ### Claim 4 (depends on 1) The semiconductor device structure as claimed in claim 1, wherein the magnetic element comprises multiple sub-layers, and each sub-layer is wider than another sub-layer above it. ### Claim 5 (depends on 4) The semiconductor device structure as claimed in claim 4, wherein a topmost sub-layer of the sub-layers has a first portion and a second portion, the second portion surrounds the first portion, and the first portion is thicker than the second portion. ### Claim 6 (depends on 5) The semiconductor device structure as claimed in claim 5, wherein the conductive line extends across the first portion and the second portion. ### Claim 7 (depends on 1) The semiconductor device structure as claimed in claim 1, further comprising a dielectric layer over the magnetic element and the conductive line. ### Claim 8 (depends on 7) The semiconductor device structure as claimed in claim 7, wherein the dielectric layer is in direct contact with the isolation element, the conductive line, and the magnetic element. ### Claim 9 (depends on 1) The semiconductor device structure as claimed in claim 1, wherein the isolation element is in direct contact with the conductive line. ### Claim 10 (depends on 1) The semiconductor device structure as claimed in claim 1, wherein the conductive line is wider than the magnetic element. ### Claim 11 A semiconductor device structure, comprising: a substrate; a magnetic element over the substrate, wherein the magnetic element comprises multiple sub-layers, and each sub-layer is wider than another sub-layer above it; a conductive feature extending across the magnetic element and partially covering the magnetic element; and an isolation element between the conductive feature and the magnetic element, wherein opposite edges of the isolation elements are laterally between opposite edges of the magnetic element. ### Claim 12 (depends on 11) The semiconductor device structure as claimed in claim 11, wherein opposite edges of the conductive features are laterally between the opposite edges of the isolation element. ### Claim 13 (depends on 11) The semiconductor device structure as claimed in claim 11, wherein a topmost sub-layer of the sub-layers has a first portion and a second portion, the second portion surrounds the first portion, and the first portion is thicker than the second portion. ### Claim 14 (depends on 13) The semiconductor device structure as claimed in claim 13, wherein the conductive feature extends across the first portion and the second portion. ### Claim 15 (depends on 13) The semiconductor device structure as claimed in claim 13, wherein the second portion has a width in a range from about 5 μm to about 10 μm. ### Claim 16 A semiconductor device structure, comprising: a substrate; a magnetic element over the substrate; an isolation element over the magnetic element; a conductive line over the isolation element, wherein the conductive line extends across opposite edges of the magnetic element; and a dielectric layer over the conductive line, the isolation element, and the magnetic element, wherein the dielectric layer is closer to the magnetic element than the conductive line. ### Claim 17 (depends on 16) The semiconductor device structure as claimed in claim 16, wherein the dielectric layer is in direct contact with the isolation element and the magnetic element. ### Claim 18 (depends on 16) The semiconductor device structure as claimed in claim 16, further comprising an etch stop layer between the substrate and the magnetic element, wherein the etch stop layer comprises tantalum oxide, zirconium oxide, tantalum nitride, or a combination thereof. ### Claim 19 (depends on 16) The semiconductor device structure as claimed in claim 16, wherein the isolation element is wider than the conductive line and narrower than the magnetic element. ### Claim 20 (depends on 16) The semiconductor device structure as claimed in claim 16, wherein the dielectric layer covers sidewalls of the magnetic element, the isolation element, and the conductive line.