# US 11,908,884 B2 · Inductive device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,908,884 B2 - Document ID: US11908884B2 - Status: Granted - Kind: B2 - Application number: 17/658,266 - Filed: 2022-04-07 - Published: 2022-07-21 - Granted: 2024-02-20 - Earliest claimed: 2020-07-29 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company, Ltd. - Inventors: Wei-Yu Chou; Yang-Che Chen; Chen-Hua Lin; Victor Chiang Liang; Huang-Wen Tseng; Chwen-Ming Liu - Web page: https://patentgrep.com/patent/US11908884B2 ## CPC - H01F 17/06: with core substantially closed in itself, e.g. toroid - H10D 1/20: Inductors - H01F 3/14: Constrictions; Gaps, e.g. air-gaps (in magnetic shunt paths H01F3/12) - H01F 17/0006: {Printed inductances (printed coils for dynamo-electric machines H02K3/26; printed circuits H05K)} - H01F 27/2804: {Printed windings} - H01F 41/34: in patterns, e.g. by lithography - H10W 44/501: {Inductive arrangements (H10W44/20 takes precedence)} - H01F 41/045: {Trimming} - H01F 2017/0066: {with a magnetic layer} - H01F 2017/065: {Core mounted around conductor to absorb noise, e.g. EMI filter} - H10D 84/00: Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers - H10W 20/497: {Inductive arrangements or effects of, or between, wiring layers} - H10W 44/20: at high-frequency [HF] or radio frequency [RF] - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An inductive device includes an insulating layer, a lower magnetic layer, and an upper magnetic layer that are formed such that the insulating layer does not separate the lower magnetic layer and the upper magnetic layer at the outer edges or wings of the inductive device. The lower magnetic layer and the upper magnetic layer form a continuous magnetic layer around the insulating layer and the conductors of the inductive device. Magnetic leakage paths are provided by forming openings through the upper magnetic layer. The openings may be formed through the upper magnetic layer by semiconductor processes that have relatively higher precision and accuracy compared to semiconductor processes for forming the insulating layer such as spin coating. This reduces magnetic leakage path variation within the inductive device and from inductive device to inductive device. ## Claims ### Claim 1 An inductive device, comprising: a lower magnetic layer; an upper magnetic layer in contact with the lower magnetic layer, wherein the upper magnetic layer comprises one or more openings to provide one or more magnetic leakage paths for the inductive device; and one or more insulating layers insulating one or more conductors from the lower magnetic layer and the upper magnetic layer. ### Claim 2 (depends on 1) The inductive device of claim 1, wherein a first opening of the one or more openings is above a first conductor of the one or more conductors; and wherein a second opening of the one or more openings is above a second conductor of the one or more conductors. ### Claim 3 (depends on 1) The inductive device of claim 1, wherein the one or more openings are formed through the upper magnetic layer at a top of the inductive device. ### Claim 4 (depends on 1) The inductive device of claim 1, wherein the one or more openings are formed through the lower magnetic layer at a bottom of the inductive device. ### Claim 5 (depends on 1) The inductive device of claim 1, wherein the one or more openings include one or more holes through at least one of the upper magnetic layer or the lower magnetic layer. ### Claim 6 (depends on 1) The inductive device of claim 1, wherein the one or more openings include one or more trenches through at least one of the upper magnetic layer or the lower magnetic layer. ### Claim 7 An inductive device, comprising: one or more conductors; one or more insulating layers surrounding the one or more conductors; one or more magnetic layers surrounding the one or more insulating layers; and one or more openings through the one or more magnetic layers. ### Claim 8 (depends on 7) The inductive device of claim 7, wherein the one or more magnetic layers comprises a first magnetic layer and a second magnetic layer, and wherein each of the one or more openings are in the first magnetic layer. ### Claim 9 (depends on 8) The inductive device of claim 8, wherein the first magnetic layer comprises side walls and a top portion connected to the side walls, and the second magnetic layer is flat. ### Claim 10 (depends on 9) The inductive device of claim 9, wherein the one or more openings are in the top portion of the first magnetic layer. ### Claim 11 (depends on 8) The inductive device of claim 8, wherein the one or more insulating layers comprises a first insulating layer, in contact with the first magnetic layer and not with the second magnetic layer, and a second insulating layer, in contact with the second magnetic layer and not with the first magnetic layer. ### Claim 12 (depends on 11) The inductive device of claim 11, wherein the first insulating layer comprises one or more different materials than the second insulating layer. ### Claim 13 (depends on 7) The inductive device of claim 7, wherein the one or more openings comprises one or more trenches or one or more holes.