# US 11,908,860 B2 · Integrated chip with improved latch-up immunity

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- Number: US 11,908,860 B2
- Document ID: US11908860B2
- Status: Granted
- Kind: B2
- Application number: 17/673,030
- Filed: 2022-02-16
- Published: 2022-06-02
- Granted: 2024-02-20
- Earliest claimed: 2020-03-04
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Hsin-Wen Su; Lien Jung Hung; Ping-Wei Wang; Wen-Chun Keng; Chih-Chuan Yang; Shih-Hao Lin
- Web page: https://patentgrep.com/patent/US11908860B2

## CPC

- H10D 84/854: {comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention}
- H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)}
- H10D 62/371: {Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current}
- H10D 64/519: {characterised by their top-view geometrical layouts}
- H10D 84/017: {Manufacturing their source or drain regions, e.g. silicided source or drain regions}
- H10D 84/0172: {Manufacturing their gate conductors}
- H10D 84/0179: {the gate conductors having different shapes or dimensions}
- H10D 84/0186: {Manufacturing their interconnections or electrodes, e.g. source or drain electrodes}
- H10D 84/0191: {Manufacturing their doped wells}
- H10D 84/0193: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/853: {comprising FinFETs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Various embodiments of the present disclosure are directed towards an integrated chip (IC) having a device section and a pick-up section. The IC includes a semiconductor substrate. A first fin of the semiconductor substrate is disposed in the device section. A second fin of the semiconductor substrate is disposed in the pick-up section and laterally spaced from the first fin in a first direction. A gate structure is disposed in the device section and laterally spaced from the second fin in the first direction. The gate structure extends laterally over the semiconductor substrate and the first fin in a second direction perpendicular to the first direction. A pick-up region is disposed on the second fin. The pick-up region continuously extends from a first sidewall of the second fin to a second sidewall of the second fin. The first sidewall is laterally spaced from the second sidewall in the first direction.

## Claims

### Claim 1

An integrated chip (IC) comprising a device section and a pick-up section disposed on a side of the device section, the IC comprising:
a semiconductor substrate;
a first fin of the semiconductor substrate disposed in the device section;
a second fin of the semiconductor substrate disposed in the pick-up section and laterally spaced from the first fin in a first direction;
a continuous gate structure disposed in the device section, wherein the continuous gate structure extends laterally over both the semiconductor substrate and the first fin in a second direction that is perpendicular to the first direction, wherein a first outermost sidewall of the continuous gate structure is laterally spaced from the second fin in the first direction; and
a first epitaxial pick-up structure disposed on the second fin, wherein the first epitaxial pick-up structure continuously extends from a second outermost sidewall of the second fin to a third outermost sidewall of the second fin, wherein the second outermost sidewall is laterally spaced from the third outermost sidewall in the first direction, and wherein the second outermost sidewall faces the first outermost sidewall.

### Claim 2 (depends on 1)

The IC of claim 1, wherein there are no continuous gate structures disposed in the pick-up section.

### Claim 3 (depends on 1)

The IC of claim 1, wherein a bottom surface of the first epitaxial pick-up structure is convex.

### Claim 4 (depends on 1)

The IC of claim 1, wherein:
the first epitaxial pick-up structure has a center point disposed an equal distance from the second outermost sidewall and the third outermost sidewall; and
a thickness of the first epitaxial pick-up structure continuously decreases from the center point to the second outermost sidewall and continuously decreases from the center point to the third outermost sidewall.

### Claim 5 (depends on 1)

The IC of claim 1, further comprising:
a first doped region having a first doping type disposed in the semiconductor substrate, wherein the first doped region continuously extends from the device section into the pick-up section, and wherein the first epitaxial pick-up structure is electrically coupled to the first doped region.

### Claim 6 (depends on 1)

The IC of claim 1, further comprising:
a third fin of the semiconductor substrate disposed in the pick-up section and laterally spaced from both the second fin and the first fin;
a second epitaxial pick-up structure disposed on the third fin, wherein:
the second epitaxial pick-up structure continuously extends from a fourth outermost sidewall of the third fin to a fifth outermost sidewall of the third fin;
the fourth outermost sidewall is laterally spaced from the fifth outermost sidewall in the first direction;
the first epitaxial pick-up structure comprises a first Group IV chemical element; and
the second epitaxial pick-up structure comprises a second Group IV chemical element that is different than the first Group IV chemical element.

### Claim 7 (depends on 6)

The IC of claim 6, further comprising:
an isolation structure disposed over a lower region of the semiconductor substrate, wherein the first fin, the second fin, and the third fin extend vertically through the isolation structure;
a conductive contact disposed in the pick-up section, wherein the conductive contact extends continuously across an upper surface of the isolation structure, over the second fin, and over the third fin; and
a conductive via disposed in the pick-up section and electrically coupled to the conductive contact, wherein the conductive via extends vertically from the conductive contact at a location disposed between the second fin and the third fin.

### Claim 8 (depends on 6)

The IC of claim 6, further comprising:
a first doped region having a first doping type disposed in the semiconductor substrate, wherein the first doped region continuously extends from the device section into the pick-up section, and wherein the first epitaxial pick-up structure is electrically coupled to the first doped region; and
a second doped region having a second doping type opposite the first doping type disposed in the semiconductor substrate, wherein the second doped region continuously extends from the device section into the pick-up section, and wherein the second epitaxial pick-up structure is electrically coupled to the second doped region.

### Claim 9 (depends on 8)

The IC of claim 8, wherein:
the first doped region at least partially extends into the second fin; and
the second doped region at least partially extends into the third fin.

### Claim 10 (depends on 9)

The IC of claim 9, further comprising:
a fourth fin of the semiconductor substrate disposed in the device section and laterally spaced from the first fin, the second fin, and the third fin, wherein the first doped region at least partially extends into the first fin, and the second doped region at least partially extends into the fourth fin.

### Claim 11 (depends on 10)

The IC of claim 10, wherein the second epitaxial pick-up structure comprises both the second Group IV chemical element and the first Group IV chemical element.

### Claim 12

An integrated chip (IC) comprising:
a first semiconductor fin protruding from a portion of a semiconductor substrate;
a second semiconductor fin protruding from the portion of the semiconductor substrate, wherein the second semiconductor fin is laterally spaced from the first semiconductor fin in a first direction;
a gate structure disposed over the portion of the semiconductor substrate and the first semiconductor fin, wherein the gate structure extends laterally over the semiconductor substrate and the first semiconductor fin in a second direction that is transverse the first direction; and
an epitaxial pick-up structure disposed on the second semiconductor fin, wherein the epitaxial pick-up structure continuously extends from a first outermost sidewall of the second semiconductor fin to a second outermost sidewall of the second semiconductor fin, and wherein the second outermost sidewall is laterally spaced from the first outermost sidewall in the first direction.

### Claim 13 (depends on 12)

The IC of claim 12, wherein the second semiconductor fin neighbors the first semiconductor fin.

### Claim 14 (depends on 12)

The IC of claim 12, further comprising:
a doped region having a first doping type disposed in the semiconductor substrate, wherein the doped region is disposed in the first semiconductor fin and the second semiconductor fin, wherein the doped region extends from the first semiconductor fin continuously through the portion of the semiconductor substrate to the second semiconductor fin, and wherein the epitaxial pick-up structure is electrically coupled to the doped region.

### Claim 15 (depends on 14)

The IC of claim 14, further comprising:
a pair of source/drain regions disposed in the first semiconductor fin, wherein the pair of source/drain regions have a second doping type opposite the first doping type, and wherein a portion of the doped region extends laterally between the pair of source/drain regions.

### Claim 16 (depends on 12)

The IC of claim 12, wherein:
the gate structure has an outer sidewall that faces the first outermost sidewall of the second semiconductor fin;
an outermost sidewall of the first semiconductor fin is disposed laterally between the first outermost sidewall of the second semiconductor fin and the outer sidewall of the gate structure; and
the outermost sidewall of the first semiconductor fin is laterally spaced from the outer sidewall of the gate structure in the first direction.

### Claim 17 (depends on 12)

The IC of claim 12, further comprising:
an interlayer dielectric (ILD) structure disposed over the first semiconductor fin, the second semiconductor fin, the portion of the semiconductor substrate, and the epitaxial pick-up structure, wherein a portion of the ILD structure is disposed directly laterally between the first outermost sidewall of the second semiconductor fin and an outermost sidewall of the first semiconductor fin, wherein the outermost sidewall of the first semiconductor fin faces the first outermost sidewall of the second semiconductor fin.

### Claim 18 (depends on 17)

The IC of claim 17, wherein the portion of the ILD structure extends continuously in the first direction from the outermost sidewall of the first semiconductor fin to the first outermost sidewall of the second semiconductor fin.

### Claim 19

An integrated chip (IC) comprising a device section and a pick-up section disposed on a side of the device section, the IC comprising:
an isolation structure disposed over a lower portion of a semiconductor substrate;
a first semiconductor fin disposed in the device section, wherein the first semiconductor fin extends vertically through the isolation structure from the lower portion of the semiconductor substrate;
a second semiconductor fin disposed in the pick-up section, wherein the second semiconductor fin extends vertically through the isolation structure from the lower portion of the semiconductor substrate, wherein the second semiconductor fin has a first outer sidewall that faces an outer sidewall of the first semiconductor fin, and wherein a portion of the isolation structure extends laterally from the outer sidewall of the first semiconductor fin to the first outer sidewall of the second semiconductor fin;
a doped region disposed in the first semiconductor fin, the second semiconductor fin, and the lower portion of the semiconductor substrate, wherein the doped region extends from the first semiconductor fin to the second semiconductor fin by extending beneath the portion of the isolation structure;
a pair of source/drain regions disposed in the first semiconductor fin;
a gate structure disposed over the first semiconductor fin and the lower portion of the semiconductor substrate, wherein the gate structure extends laterally over the semiconductor substrate and the first semiconductor fin in a first direction, wherein the gate structure extends laterally in the first direction between the source/drain regions of the pair of source/drain regions, and wherein the gate structure is laterally spaced from the second semiconductor fin; and
an epitaxial pick-up structure disposed on the second semiconductor fin, wherein the epitaxial pick-up structure is electrically coupled to the doped region, wherein the epitaxial pick-up structure continuously extends from the first outer sidewall of the second semiconductor fin to a second outer sidewall of the second semiconductor fin, and wherein the second outer sidewall of the second semiconductor fin is opposite the first outer sidewall of the second semiconductor fin.

### Claim 20 (depends on 19)

The IC of claim 19, wherein:
the first semiconductor fin neighbors the second semiconductor fin; and
a plane that extends laterally in a second direction and in a substantially straight line intersects the gate structure, the outer sidewall of the first semiconductor fin, the first outer sidewall of the second semiconductor fin, the second outer sidewall of the second semiconductor fin, the epitaxial pick-up structure, the portion of the isolation structure, and the source/drain regions of the pair of source/drain regions; and
the second direction is perpendicular to the first direction.