# US 11,908,853 B2 · Integrated circuit and method of generating integrated circuit layout > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,908,853 B2 - Document ID: US11908853B2 - Status: Granted - Kind: B2 - Application number: 18/069,887 - Filed: 2022-12-21 - Published: 2023-04-20 - Granted: 2024-02-20 - Earliest claimed: 2017-11-14 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Co., Ltd. - Inventors: Fong-Yuan Chang; Kuo-Nan Yang; Chung-Hsing Wang; Lee-Chung Lu; Sheng-Fong Chen; Po-Hsiang Huang; Hiranmay Biswas; Sheng-Hsiung Chen; Aftab Alam Khan - Web page: https://patentgrep.com/patent/US11908853B2 ## CPC - H10D 89/10: Integrated device layouts - G06F 30/39: Circuit design at the physical level (physical level design for reconfigurable circuits G06F30/347) - G06F 30/394: Routing (G06F30/396 takes precedence) - H10D 84/907: {CMOS gate arrays} - H10W 20/42: Vias, e.g. via plugs - H10W 20/435: {Cross-sectional shapes or dispositions of interconnections} - H10D 84/981: {Power supply lines} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An integrated circuit includes a cell layer including a first cell and a second cell, a first metal layer over the cell layer and having a first conductive feature, a second metal layer over the first metal layer and having a second conductive feature, and a first via between the first metal layer and the second metal layer and connecting the first conductive feature to the second conductive feature. The first conductive feature spans over a boundary between the first and second cells, and has a lengthwise direction along a first direction. The second conductive feature spans over the boundary between the first and second cells, and has a lengthwise direction along a second direction that is perpendicular to the first direction. ## Claims ### Claim 1 An integrated circuit, comprising: a cell layer including a first cell and a second cell; a first metal layer over the cell layer and having a first conductive feature, wherein the first conductive feature spans over a boundary between the first and second cells, and has a lengthwise direction along a first direction, and wherein the first metal layer further comprises a third conductive feature, the third conductive feature being misaligned with the first conductive feature along the first direction; a second metal layer over the first metal layer and having a second conductive feature, wherein the second conductive feature spans over the boundary between the first and second cells, and has a lengthwise direction along a second direction that is perpendicular to the first direction, and wherein a shortest distance between a center line of the first conductive feature and a center line of the third conductive feature along the second direction is less than a width of the first conductive feature; and a first via between the first metal layer and the second metal layer and connecting the first conductive feature to the second conductive feature. ### Claim 2 (depends on 1) The integrated circuit of claim 1, further comprises a third metal layer over the second metal layer and having a fourth conductive feature, wherein the fourth conductive feature spans over the boundary between the first and second cells, and has a lengthwise direction along the first direction, and wherein the fourth conductive feature is longer than the first conductive feature along the first direction. ### Claim 3 (depends on 2) The integrated circuit of claim 2, wherein the fourth conductive feature extends to a region outside the first and second cells. ### Claim 4 (depends on 1) The integrated circuit of claim 1, wherein the cell layer further comprises a third cell separated from the first and second cells, and the first and second conductive features do not overlap the third cell. ### Claim 5 (depends on 4) The integrated circuit of claim 4, wherein the first metal layer further comprises a fourth conductive feature overlapping the third cell, wherein the third conductive feature is aligned with the first conductive feature along the first direction. ### Claim 6 (depends on 1) The integrated circuit of claim 1, wherein the third conductive feature has an L-shape top profile. ### Claim 7 (depends on 1) The integrated circuit of claim 1, wherein the cell layer further comprises a third cell separated from the first and second cells, and a portion of the third conductive feature overlaps the third cell. ### Claim 8 An integrated circuit, comprising: a cell layer including a first cell and a second cell; a first metal layer over the cell layer, comprising: a first conductive feature vertically over the first cell and having a linear top profile; a second conductive feature vertically over the second cell and having a linear top profile; and a third conductive feature having a portion non-overlapping the first and second cells, and having an L-shape top profile; a first via connecting the first conductive feature and the first cell; and a second via connecting the second conductive feature and the second cell. ### Claim 9 (depends on 8) The integrated circuit of claim 8, wherein the first conductive feature is aligned with the second conductive feature along a first direction. ### Claim 10 (depends on 8) The integrated circuit of claim 8, wherein the third conductive feature has a portion extending to an end-to-end region between the first conductive feature and the second conductive feature. ### Claim 11 (depends on 8) The integrated circuit of claim 8, wherein the third conductive feature overlaps the second cell and does not overlaps the first cell. ### Claim 12 (depends on 8) The integrated circuit of claim 8, wherein a shortest distance between a center line of the first conductive feature and a center line of the third conductive feature is less than a width of the first conductive feature. ### Claim 13 (depends on 8) The integrated circuit of claim 8, wherein the first conductive feature overlaps a boundary of the first cell. ### Claim 14 (depends on 8) The integrated circuit of claim 8, wherein the first and second conductive features have substantially a same width. ### Claim 15 An integrated circuit, comprising: a cell layer including a first cell and a second cell separated by a non-zero distance; a first metal layer over the cell layer, comprising: a first conductive feature overlapping the first cell and having a lengthwise direction along a first direction; and a second conductive feature overlapping the second cell and having a lengthwise direction along the first direction; a second metal layer over the first metal layer, comprising a third conductive feature overlapping both the first and second cells and having a lengthwise direction along the first direction; and a third metal layer between the first and second metal layers, wherein the third metal layer comprises a fourth conductive feature electrically connecting the first and third conductive features, and a fifth conductive feature electrically connecting the second and third conductive features. ### Claim 16 (depends on 15) The integrated circuit of claim 15, wherein the first metal layer further comprises a sixth conductive feature, and wherein a shortest distance between the first conductive feature and the sixth conductive feature is less than a width of the first conductive feature. ### Claim 17 (depends on 16) The integrated circuit of claim 16, wherein the sixth conductive feature has a portion between the first and second conductive features along the first direction. ### Claim 18 (depends on 15) The integrated circuit of claim 15, wherein the fourth conductive feature overlaps the first and third conductive features and the fifth conductive feature overlaps the second and third conductive features. ### Claim 19 (depends on 15) The integrated circuit of claim 15, wherein the cell layer further comprises a third cell adjacent to the first cell, and the first conductive feature overlaps a boundary of the first cell and the third cell. ### Claim 20 (depends on 15) The integrated circuit of claim 15, wherein the fourth conductive feature and the fifth conductive feature have a lengthwise direction along a second direction perpendicular to the first direction.