# US 11,908,850 B2 · Display device, display module, electronic device, and method for manufacturing display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,908,850 B2 - Document ID: US11908850B2 - Status: Granted - Kind: B2 - Application number: 17/270,081 - Filed: 2019-08-22 - Published: 2021-10-21 - Granted: 2024-02-20 - Earliest claimed: 2018-09-05 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Shunpei Yamazaki; Koji Kusunoki; Shingo Eguchi; Takayuki Ikeda - Web page: https://patentgrep.com/patent/US11908850B2 ## CPC - H10W 90/00: Package configurations - G06F 3/044: by capacitive means - G09F 9/00: Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements (in which the variable information is permanently attached to a movable support G09F11/00; abacus G06C1/00; slide-rules G06G1/00) - G09F 9/30: in which the desired character or characters are formed by combining individual elements (panels comprising a number of electrodes in a single cell controlling light arriving from an independent light source, e.g. electro-optical or magneto-optical cell, G02F1/00) - G09F 9/33: being semiconductor devices, e.g. diodes - H10D 86/441: {Interconnections, e.g. scanning lines} - H10H 20/018: {Bonding of wafers} - H10W 72/0198: {batch processes} - G06F 3/0412: {Digitisers structurally integrated in a display} - G06F 2203/04103: Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/60: wherein the TFTs are in active matrices - H10H 20/034: {of coatings} - H10H 20/0364: {of interconnections} - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/851: Wavelength conversion means - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10W 90/722: {between stacked chips} - H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - G09F: DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A display device with high resolution is provided. A display device with high display quality is provided. The display device includes a substrate, an insulating layer, a plurality of transistors, and a plurality of light-emitting diodes. The plurality of light-emitting diodes are provided in a matrix over the substrate. Each of the plurality of transistors is electrically connected to at least one of the plurality of light-emitting diodes. The plurality of light-emitting diodes are positioned closer to the substrate than the plurality of transistors are. The plurality of light-emitting diodes emit light toward the substrate. Each of the plurality of transistors includes a metal oxide layer and a gate electrode. The metal oxide layer includes a channel formation region. The top surface of the gate electrode is substantially level with the top surface of the insulating layer. ## Claims ### Claim 1 A display device comprising: a substrate; a plurality of light-emitting diodes over the substrate, the plurality of light-emitting diodes arranged in a matrix; a plurality of transistors each electrically connected to at least one of the plurality of light-emitting diodes; an insulating layer between the plurality of light-emitting diodes and the plurality of transistors; and a plurality of conductive pastes between the plurality of light-emitting diodes and the plurality of transistors, wherein one of the plurality of transistors is electrically connected to the one of the plurality of light-emitting diodes via one of the plurality of conductive pastes, wherein the plurality of light-emitting diodes is closer to the substrate than the plurality of transistors is, wherein each of the plurality of light-emitting diodes is a micro light-emitting diode, wherein an area of a light-emitting region of each of the plurality of light-emitting diodes is less than or equal to 10000 μm2, wherein each of the plurality of transistors comprises a metal oxide layer and a gate electrode, and wherein a top surface of the gate electrode is substantially level with a top surface of the insulating layer. ### Claim 2 (depends on 1) The display device according to claim 1, wherein the plurality of light-emitting diodes comprises a first light-emitting diode and a second light-emitting diode, and wherein emission of the first light-emitting diode has a different color from emission of the second light-emitting diode. ### Claim 3 (depends on 2) The display device according to claim 2, wherein a first transistor is electrically connected to the first light-emitting diode, wherein a second transistor is electrically connected to the second light-emitting diode, and wherein the first transistor and the second transistor are different in one or both of channel length and channel width. ### Claim 4 (depends on 1) The display device according to claim 1, wherein all the plurality of light-emitting diodes is configured to emit light with an identical color. ### Claim 5 (depends on 1) The display device according to claim 1, further comprising a driver circuit, wherein the driver circuit comprises a plurality of circuit transistors, wherein each of the plurality of circuit transistors comprises a channel formation region in a semiconductor substrate, wherein the insulating layer, the plurality of transistors, and the plurality of light-emitting diodes are between the substrate and the semiconductor substrate, and wherein the plurality of transistors is closer to the substrate than the plurality of circuit transistors is. ### Claim 6 (depends on 1) The display device according to claim 1, further comprising a functional layer, wherein the functional layer is between the substrate and the one of the plurality of light-emitting diodes, wherein the one of the plurality of light-emitting diodes emits light toward the substrate through the functional layer, and wherein the functional layer comprises one or both of a coloring layer and a color conversion layer. ### Claim 7 (depends on 1) The display device according to claim 1, further comprising a touch sensor, wherein each of the plurality of light-emitting diodes is configured to emit light toward the touch sensor through the substrate. ### Claim 8 (depends on 1) A display module comprising: the display device according to claim 1; and one of a connector and an integrated circuit electrically connected to the display device. ### Claim 9 (depends on 1) The display device according to claim 1, further comprising a color conversion layer overlapping with the one of the plurality of light-emitting diodes, wherein the color conversion layer includes a quantum dot. ### Claim 10 A display device comprising: a substrate; an insulating layer; a plurality of light-emitting diodes over the substrate, the plurality of light-emitting diodes arranged in a matrix; a plurality of transistors each electrically connected to at least one of the plurality of light-emitting diodes; and a plurality of conductive pastes between the plurality of light-emitting diodes and the plurality of transistors, wherein one of the plurality of transistors is electrically connected to the one of the plurality of light-emitting diodes via one of the plurality of conductive pastes, wherein the plurality of light-emitting diodes is closer to the substrate than the plurality of transistors is, wherein each of the plurality of light-emitting diodes is a micro light-emitting diode, wherein an area of a light-emitting region of each of the plurality of light-emitting diodes is less than or equal to 10000 μm2, wherein the plurality of light-emitting diodes is configured to emit light toward the substrate, wherein each of the plurality of transistors comprises a metal oxide layer, a gate insulating layer, a gate electrode, a first conductive layer, and a second conductive layer, wherein the metal oxide layer comprises a first region, a second region, and a third region comprising a channel formation region between the first region and the second region, wherein the first conductive layer overlaps with the first region and the second conductive layer overlaps with the second region, wherein the first conductive layer and the second conductive layer are apart from each other over the metal oxide layer, wherein the insulating layer is over the first conductive layer and the second conductive layer, wherein the insulating layer comprises an opening overlapping with the third region, wherein the gate insulating layer and the gate electrode are inside the opening, and wherein the gate electrode faces the insulating layer with the gate insulating layer therebetween and faces the third region with the gate insulating layer therebetween. ### Claim 11 (depends on 10) The display device according to claim 10, wherein the plurality of light-emitting diodes comprises a first light-emitting diode and a second light-emitting diode, and wherein emission of the first light-emitting diode has a different color from emission of the second light-emitting diode. ### Claim 12 (depends on 11) The display device according to claim 11, wherein a first transistor is electrically connected to the first light-emitting diode, wherein a second transistor is electrically connected to the second light-emitting diode, and wherein the first transistor and the second transistor are different in one or both of channel length and channel width. ### Claim 13 (depends on 10) The display device according to claim 10, wherein all the plurality of light-emitting diodes is configured to emit light with an identical color. ### Claim 14 (depends on 10) The display device according to claim 10, further comprising a driver circuit, wherein the driver circuit comprises a plurality of circuit transistors, wherein each of the plurality of circuit transistors comprises a channel formation region in a semiconductor substrate, wherein the insulating layer, the plurality of transistors, and the plurality of light-emitting diodes are between the substrate and the semiconductor substrate, and wherein the plurality of transistors is closer to the substrate than the plurality of circuit transistors is. ### Claim 15 (depends on 10) The display device according to claim 10, further comprising a functional layer, wherein the functional layer is between the substrate and the one of the plurality of light-emitting diodes, wherein the one of the plurality of light-emitting diodes emits light toward the substrate through the functional layer, and wherein the functional layer comprises one or both of a coloring layer and a color conversion layer. ### Claim 16 (depends on 10) The display device according to claim 10, further comprising a touch sensor, wherein each of the plurality of light-emitting diodes is configured to emit light toward the touch sensor through the substrate. ### Claim 17 (depends on 10) A display module comprising: the display device according to claim 10; and one of a connector and an integrated circuit electrically connected to the display device. ### Claim 18 (depends on 10) The display device according to claim 10, further comprising a color conversion layer overlapping with the one of the plurality of light-emitting diodes, wherein the color conversion layer includes a quantum dot.