# US 11,908,832 B2 · Process for collectively bending microelectronic components using shaping carrier

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- Number: US 11,908,832 B2
- Document ID: US11908832B2
- Status: Granted
- Kind: B2
- Application number: 17/645,360
- Filed: 2021-12-21
- Published: 2022-06-23
- Granted: 2024-02-20
- Earliest claimed: 2020-12-22
- Assignees: Commissariat A L'energie Atomique Et Aux Energies Alternatives
- Applicants: Commissariat à L'energie Atomique Et Aux Energies Alternatives
- Inventors: Alexis Rochas; David Henry; Stéphane Caplet
- Web page: https://patentgrep.com/patent/US11908832B2

## CPC

- H10F 71/139: {using temporary substrates}
- H10W 72/0198: {batch processes}
- H10F 39/026: {Wafer-level processing}
- H10F 39/80: {Constructional details of image sensors}
- H10F 39/804: {Containers or encapsulations}
- H10F 39/811: {Interconnections}
- H10F 77/147: {Shapes of bodies}
- H10F 77/407: {indirectly associated with the devices}
- H10F 77/50: Encapsulations or containers (for photovoltaic modules H10F19/80)
- H10F 77/933: {for devices having potential barriers}
- H10P 72/74: {using temporarily an auxiliary support}
- H10W 72/071: {Connecting or disconnecting}
- H10P 72/7432: {used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate}
- H10W 90/794: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The invention relates to a process for collectively bending microelectronic components comprising transferring microelectronic components (10) to and bending them on curved surfaces (21) of a shaping carrier (20), an adhesive layer (6) ensuring adhesion of the microelectronic components (10), and comprising producing conductive vias (22) that extend through the shaping carrier (20) and the adhesive lower layer (6), from the lower face (20i) of the shaping carrier (20), in order to emerge onto the lower conductive pads (12) of the microelectronic components (10).

## Claims

### Claim 1

A process for collectively bending microelectronic components comprising the following steps:
producing a microelectronic structure, comprising a microelectronic substrate, having an upper face and an opposite lower face, comprising a plurality of microelectronic components, each of the plurality of microelectronic components comprises lower conductive pads located on the opposite lower face and intended to allow the plurality of microelectronic components to be connected electrically;
providing a shaping carrier having an upper face and an opposite lower face, wherein the upper face comprising a plurality of curved surfaces;
depositing an adhesive lower layer having a thickness larger than the thickness of the lower conductive pads, so as: either to entirely cover the opposite lower face of the microelectronic substrate and the lower conductive pads such that the adhesive lower layer has a free lower face that is continuous and therefore not passed right through by the lower conductive pads which would otherwise protrude from the adhesive lower layer; or to cover the plurality of curved surfaces;
dicing at least the microelectronic substrate to singulate the plurality of microelectronic components; then
transferring the plurality of microelectronic components to the shaping carrier; then
bending the plurality of microelectronic components, the adhesive lower layer then making contact with the lower face of the plurality of microelectronic components and with a corresponding curved surface, thus preventing the lower conductive pads from making contact with the plurality of curved surfaces; then
producing conductive vias that extend through the shaping carrier and the adhesive lower layer from the opposite lower face of the shaping carrier, in order to emerge onto the lower conductive pads.

### Claim 2 (depends on 1)

The process according to claim 1, wherein the lower conductive pads are placed on an isoline of a lower face of the plurality of microelectronic components, the isoline being predetermined as being a line of equidistance to the opposite lower face of the shaping carrier, when the plurality of microelectronic component has components have been joined to the shaping carrier and are bent with the curvature of the plurality of curved surfaces, the conductive vias having a uniform vertical dimension.

### Claim 3 (depends on 2)

The process according to claim 2, comprising, after bending, a step of joining a handle substrate to the shaping carrier on a side of the plurality of curved surfaces, so as to allow a stack thus obtained to be handled in the step of producing the conductive vias.

### Claim 4 (depends on 3)

The process according to claim 3, wherein the handle substrate joined to the shaping carrier is joined to a free end of sidewalls, which are located between and encircle the plurality of curved surfaces.

### Claim 5 (depends on 2)

The process according to claim 2, wherein each microelectronic component comprises upper conductive pads located on the upper face of the microelectronic substrate, and the conductive vias passing through the latter in order to emerge onto the opposite lower face of the microelectronic substrate, so as to encircle the isoline.

### Claim 6 (depends on 2)

The process according to claim 2, wherein the lower conductive pads are placed in contact with the conductive vias of the plurality of microelectronic components, or are offset with respect to the conductive vias and are connected thereto by conductive lines.

### Claim 7 (depends on 1)

The process according to claim 1, comprising, in a step of producing the microelectronic structure, an operation of joining a temporary handle substrate to the microelectronic substrate on a side of the upper face.

### Claim 8 (depends on 7)

The process according to claim 7, comprising a step of thinning the microelectronic substrate, from the opposite lower face opposite the temporary handle substrate joined to the microelectronic substrate.

### Claim 9 (depends on 7)

The process according to claim 7, wherein, after transferring and before bending, the temporary handle substrate joined to the microelectronic substrate is removed from each microelectronic component.

### Claim 10 (depends on 1)

The process according to claim 1, wherein the shaping carrier is a single piece of one given material.

### Claim 11 (depends on 10)

The process according to claim 10, wherein the shaping carrier is made of a thermally conductive material.

### Claim 12 (depends on 1)

The process according to claim 1, wherein the plurality of microelectronic components are optical components for emitting or detecting light radiation.

### Claim 13 (depends on 1)

The process according to claim 1, wherein:
in the step of transferring the plurality of microelectronic components to the shaping carrier, the plurality of microelectronic components are all joined to the temporary handle substrate;
the step of transferring the plurality of microelectronic components to the shaping carrier is carried out so that the plurality of microelectronic components rest on and adhere to, via a bearing region of the opposite lower face, an upper surface of sidewalls of the shaping carrier that encircle the plurality of curved surfaces;
a step of removing the temporary handle substrate is then carried out;
a step of bending the plurality of microelectronic components is then carried out, so that the plurality of microelectronic components are bent, and adhere to the plurality of curved surfaces via an intermediate adhesive layer, the latter then making contact with a lower face of each microelectronic component and with a corresponding curved surface.

### Claim 14 (depends on 13)

The process according to claim 13, comprising, before the step of removing the temporary handle substrate joined to the plurality of microelectronic components, increasing temperature to a first temperature comprised in a temperature range of cross-linkage of the intermediate adhesive layer, then, during or after bending, increasing temperature to a second temperature comprised in the cross-linkage temperature range and above the first temperature.