# US 11,908,823 B2 · Devices incorporating stacked bonds and methods of forming the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,908,823 B2 - Document ID: US11908823B2 - Status: Granted - Kind: B2 - Application number: 17/145,794 - Filed: 2021-01-11 - Published: 2022-07-14 - Granted: 2024-02-20 - Earliest claimed: 2021-01-11 - Assignees: Wolfspeed, Inc. - Applicants: Wolfspeed, Inc. - Inventors: Erwin Orejola; Brian Condie; Ulf Andre - Web page: https://patentgrep.com/patent/US11908823B2 ## CPC - H10W 44/20: at high-frequency [HF] or radio frequency [RF] - H10W 72/50: Bond wires - H10W 72/90: Bond pads, in general - H10W 44/206: {Wires} - H10W 44/234: {Arrangements for impedance matching} - H10W 44/251: {for monolithic microwave integrated circuits [MMIC]} - H10W 72/01551: {Changing the shapes of bond wires} - H10W 72/07511: {Treating the bonding area before connecting, e.g. by applying flux or cleaning} - H10W 72/07532: {Compression bonding, e.g. thermocompression bonding} - H10W 72/07533: {Ultrasonic bonding, e.g. thermosonic bonding} - H10W 72/07553: {changes in shapes} - H10W 72/07554: {changes in dispositions} - H10W 72/534: {being rectangular} - H10W 72/536: {the connected ends being ball-shaped} - H10W 72/5363: {the connected ends being wedge-shaped} - H10W 72/537: {Multiple bond wires having different shapes} - H10W 72/5434: {the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires} - H10W 72/547: {Dispositions of multiple bond wires} - H10W 72/5475: {multiple bond wires connected to common bond pads at both ends of the wires} - H10W 72/552: {comprising metals or metalloids, e.g. silver} - H10W 72/5522: {comprising gold [Au]} - H10W 72/5524: {comprising aluminium [Al]} - H10W 72/5525: {comprising copper [Cu]} - H10W 74/00: Encapsulations, e.g. protective coatings - H10W 90/759: {between a chip and a laterally-adjacent discrete passive device} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A packaged semiconductor device includes a first bond pad, a second bond pad, a first bond wire that includes a first end bonded to the first bond pad and a second end bonded to the second bond pad, and a second bond wire that includes a first end that is electrically connected to the first bond pad and a second end that is electrically connected to the second bond pad. The first end of the second bond wire is bonded to the first end of the first bond wire. A method of bonding a bond wire includes bonding a first end of a first bond wire to a contact surface of a first bond pad and bonding a first end of a second bond wire to a surface of the first end of the first bond wire. ## Claims ### Claim 1 A packaged semiconductor device comprising: a first bond wire comprising a first end and a second end; and a second bond wire comprising a first end and a second end, wherein the first end of the second bond wire is bonded to a surface of the first end of the first bond wire, wherein the first end of the second bond wire and the first end of the first bond wire comprise respective widths in a horizontal direction or respective thicknesses in a vertical direction that differ from one another, and wherein an operating frequency of the packaged semiconductor device is between 500 MHz and 75 GHz. ### Claim 2 (depends on 1) The packaged semiconductor device of claim 1, wherein the second end of the second bond wire is bonded to a surface of the second end of the first bond wire. ### Claim 3 (depends on 1) The packaged semiconductor device of claim 1, wherein the second end of the second bond wire is bonded to a contact surface of a pad. ### Claim 4 (depends on 3) The packaged semiconductor device of claim 3, wherein the second end of the first bond wire is bonded to the contact surface of the pad, and wherein the second end of the first bond wire is separated from the second end of the second bond wire. ### Claim 5 (depends on 1) The packaged semiconductor device of claim 1, further comprising a monolithic microwave integrated circuit (MMIC). ### Claim 6 A packaged semiconductor device comprising: a first bond wire comprising a first end and a second end; and a second bond wire comprising a first end and a second end, wherein the first end of the second bond wire comprises a second bonding portion that is bonded to a surface of a first bonding portion of the first end of the first bond wire, wherein a thickness of the first bonding portion of the first bond wire in a vertical direction is smaller than a thickness of the second bonding portion of the second bond wire in the vertical direction. ### Claim 7 (depends on 6) The packaged semiconductor device of claim 6, wherein the first bonding portion is bonded to a contact surface of a pad. ### Claim 8 (depends on 6) The packaged semiconductor device of claim 6, wherein an operating frequency of the packaged semiconductor device is between 500 MHz and 75 GHz. ### Claim 9 (depends on 6) The packaged semiconductor device of claim 6, wherein the second bond wire comprises a round wire comprising a predominantly round cross-section. ### Claim 10 (depends on 9) The packaged semiconductor device of claim 9, wherein the first bond wire comprises a wire ribbon comprising a predominantly rectangular cross-section. ### Claim 11 (depends on 7) The packaged semiconductor device of claim 7, wherein a width of the first bonding portion of the first bond wire in a horizontal direction is greater than a width of the second bonding portion of the second bond wire in the horizontal direction. ### Claim 12 (depends on 6) The packaged semiconductor device of claim 6, wherein greater than twenty-five percent of a circumference of the second bond wire contacts the surface of the first end of the first bond wire or greater than twenty-five percent of a circumference of the first bond wire contacts a surface of the second bond wire. ### Claim 13 (depends on 6) The packaged semiconductor device of claim 6, further comprising a third bond wire comprising a first end and a second end, wherein the second end of the third bond wire is bonded to the second end of the second bond wire. ### Claim 14 A packaged semiconductor device comprising: a first bond pad; a second bond pad; a first bond wire comprising a first end bonded to the first bond pad and a second end bonded to the second bond pad; and a second bond wire comprising a first end that is electrically connected to the first bond pad and a second end that is electrically connected to the second bond pad, wherein the first end of the second bond wire is bonded to the first end of the first bond wire, wherein the first end of the second bond wire and the first end of the first bond wire comprise respective widths in a horizontal direction or respective thicknesses in a vertical direction that differ from one another, and wherein an operating frequency of the packaged semiconductor device is between 500 MHz and 75 GHz. ### Claim 15 (depends on 14) The packaged semiconductor device of claim 14, wherein the second end of the second bond wire is bonded to a surface of the second end of the first bond wire. ### Claim 16 (depends on 14) The packaged semiconductor device of claim 14, wherein the second end of the second bond wire is bonded to the second bond pad. ### Claim 17 (depends on 16) The packaged semiconductor device of claim 16, wherein the second end of the first bond wire is separated from the second end of the second bond wire. ### Claim 18 (depends on 14) The packaged semiconductor device of claim 14, further comprising a monolithic microwave integrated circuit (MMIC). ### Claim 19 A packaged semiconductor device comprising: a first bond pad; a second bond pad; a first bond wire comprising a first end bonded to the first bond pad and a second end bonded to the second bond pad; and a second bond wire comprising a first end that is electrically connected to the first bond pad and a second end that is electrically connected to the second bond pad, wherein the first end of the second bond wire comprises a second bonding portion that is bonded to a first bonding portion of the first end of the first bond wire, wherein a width of the first bonding portion of the first bond wire in a horizontal direction is greater than a width of the second bonding portion of the second bond wire in the horizontal direction. ### Claim 20 (depends on 19) The packaged semiconductor device of claim 19, wherein the first bonding portion is bonded to the first bond pad. ### Claim 21 (depends on 19) The packaged semiconductor device of claim 19, wherein an operating frequency of the packaged semiconductor device is between 500 MHz and 75 GHz. ### Claim 22 (depends on 19) The packaged semiconductor device of claim 19, wherein the second bond wire comprises a round wire comprising a predominantly round cross-section. ### Claim 23 (depends on 22) The packaged semiconductor device of claim 22, wherein the first bond wire comprises a wire ribbon comprising a predominantly rectangular cross-section. ### Claim 24 (depends on 20) The packaged semiconductor device of claim 20, wherein a thickness of the first bonding portion of the first bond wire in a vertical direction is smaller than a thickness of the second bonding portion of the second bond wire in the vertical direction. ### Claim 25 (depends on 19) The packaged semiconductor device of claim 19, wherein greater than fifty percent of a lower surface of the second bond wire contacts an upper surface of the first bond wire or greater than fifty percent of the upper surface of the first bond wire contacts the lower surface of the second bond wire. ### Claim 26 (depends on 19) The packaged semiconductor device of claim 19, further comprising a third bond wire comprising a first end that is electrically connected to the first bond pad and a second end that is electrically connected to the second bond pad, wherein the second end of the third bond wire is bonded to the second end of the second bond wire. ### Claim 27 (depends on 19) The packaged semiconductor device of claim 19, further comprising an input lead, wherein one of the first bond pad or the second bond pad is electrically coupled between the first bond wire and the input lead. ### Claim 28 (depends on 19) The packaged semiconductor device of claim 19, further comprising an output lead, wherein one of the first bond pad or the second bond pad is electrically coupled between the first bond wire and the output lead. ### Claim 29 A method of bonding a bond wire comprising: bonding a first end of a first bond wire to a contact surface of a first bond pad; and bonding a first end of a second bond wire to a surface of the first end of the first bond wire by placing the first end of the second bond wire on the surface of the first end of the first bond wire and applying a second pressure to the first end of the second bond wire. ### Claim 30 (depends on 29) The method of claim 29, wherein bonding the first end of the first bond wire to the contact surface of the first bond pad comprises placing the first end of the first bond wire on the contact surface and applying a first pressure to the first end of the first bond wire. ### Claim 31 (depends on 30) The method of claim 30, wherein the second pressure is less than the first pressure. ### Claim 32 (depends on 29) The method of claim 29, further comprising bonding a second end of the second bond wire to a surface of a second end of the first bond wire. ### Claim 33 (depends on 29) The method of claim 29, further comprising bonding a second end of the second bond wire to a contact surface of a second bond pad. ### Claim 34 (depends on 33) The method of claim 33, wherein the second end of the second bond wire is bonded at a point that is separated from the second end of the first bond wire. ### Claim 35 (depends on 29) The method of claim 29, further comprising bonding a third bond wire to a surface of a second end of the second bond wire. ### Claim 36 (depends on 29) The method of claim 29, wherein at least one of the first bond wire and the second bond wire comprises a round wire comprising a predominantly round cross-section. ### Claim 37 (depends on 29) The method of claim 29, wherein at least one of the first bond wire and the second bond wire comprises a wire ribbon comprising a predominantly rectangular cross-section.