# US 11,908,822 B2 · Power semiconductor module and power conversion apparatus

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- Number: US 11,908,822 B2
- Document ID: US11908822B2
- Status: Granted
- Kind: B2
- Application number: 17/429,633
- Filed: 2019-04-09
- Published: 2022-04-07
- Granted: 2024-02-20
- Earliest claimed: 2019-04-09
- Assignees: Mitsubishi Electric Corporation
- Applicants: Mitsubishi Electric Corporation
- Inventors: Jun Fujita
- Web page: https://patentgrep.com/patent/US11908822B2

## CPC

- H10W 70/65: Shapes or dispositions of interconnections
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H02M 7/48: using discharge tubes with control electrode or semiconductor devices with control electrode
- H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections
- H10W 70/658: {for devices provided for in groups H10D8/00 - H10D48/00}
- H10W 72/071: {Connecting or disconnecting}
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10W 76/15: Containers comprising an insulating or insulated base
- H10W 76/47: Solid or gel fillings
- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07331: {Connecting techniques}
- H10W 72/07341: {Controlling the bonding environment, e.g. atmosphere composition or temperature}
- H10W 72/075: {of bond wires}
- H10W 72/07554: {changes in dispositions}
- H10W 72/07555: {changes in materials}
- H10W 72/325: {Die-attach connectors having a filler embedded in a matrix}
- H10W 72/351: {Materials of die-attach connectors}
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10W 72/5434: {the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires}
- H10W 72/547: {Dispositions of multiple bond wires}
- H10W 72/5475: {multiple bond wires connected to common bond pads at both ends of the wires}
- H10W 72/5524: {comprising aluminium [Al]}
- H10W 72/5525: {comprising copper [Cu]}
- H10W 72/557: {Multiple bond wires having different materials}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/926: {Multiple bond pads having different sizes}
- H10W 72/944: {Dispositions of multiple bond pads}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/981: {Auxiliary members, e.g. spacers}
- H10W 72/983: {Reinforcing structures, e.g. collars}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P)

## Abstract

A power semiconductor module includes a circuit substrate, a power semiconductor device including a semiconductor substrate, and at least one bonding portion. The at least one bonding portion includes a first metal member distal to the semiconductor substrate, a second metal member proximal to the semiconductor substrate, and a bonding layer that bonds the first metal member and the second metal member to each other. At an identical temperature, 0.2% offset yield strength of the first metal member is smaller than the 0.2% offset yield strength of the second metal member and is smaller than shear strength of the bonding layer.

## Claims

### Claim 1

A power semiconductor module comprising:
a circuit substrate;
a power semiconductor device including a semiconductor substrate; and
at least one bonding portion,
wherein
the at least one bonding portion includes a first metal member distal to the semiconductor substrate, a second metal member proximal to the semiconductor substrate, and a bonding layer that bonds the first metal member and the second metal member to each other, and
at an identical temperature, 0.2% offset yield strength of the first metal member is smaller than the 0.2% offset yield strength of the second metal member and is smaller than shear strength of the bonding layer.

### Claim 2 (depends on 1)

The power semiconductor module according to claim 1, wherein the 0.2% offset yield strength of the second metal member is larger than the shear strength of the bonding layer at the identical temperature.

### Claim 3 (depends on 1)

The power semiconductor module according to claim 1, wherein
the circuit substrate includes a circuit pattern,
the power semiconductor device further includes a first electrode opposite to the circuit pattern,
the at least one bonding portion includes a first bonding portion, and
the first bonding portion includes the circuit pattern as the first metal member, the first electrode as the second metal member, and a first bonding layer as the bonding layer.

### Claim 4 (depends on 1)

The power semiconductor module according to claim 1, further comprising a heat dissipation member,
wherein
the circuit substrate includes an insulating substrate, a circuit pattern, and a back conductor layer,
the insulating substrate includes a first principal surface opposite to the power semiconductor device and a second principal surface on an opposite side of the first principal surface,
the circuit pattern is provided on the first principal surface,
the back conductor layer is provided on the second principal surface,
the at least one bonding portion includes a second bonding portion, and
the second bonding portion includes the heat dissipation member as the first metal member, the back conductor layer as the second metal member, and a second bonding layer as the bonding layer.

### Claim 5 (depends on 4)

The power semiconductor module according to claim 4, wherein
the power semiconductor device further includes a first electrode opposite to the circuit pattern,
the at least one bonding portion further includes a first bonding portion, and
the first bonding portion includes the circuit pattern as the first metal member, the first electrode as the second metal member, and a first bonding layer as the bonding layer.

### Claim 6 (depends on 1)

The power semiconductor module according to claim 1, further comprising a conductive pad including a conductive pad part opposite to the power semiconductor device,
wherein
the power semiconductor device further includes a second electrode provided on a distal side from the circuit substrate,
in a plan view of the second electrode, the conductive pad has an area larger than an area of the second electrode,
the at least one bonding portion includes a third bonding portion, and
the third bonding portion includes the conductive pad part as the first metal member, the second electrode as the second metal member, and a third bonding layer as the bonding layer.

### Claim 7 (depends on 1)

The power semiconductor module according to claim 1, wherein the bonding layer is formed of a metal nanoparticle sintered body.

### Claim 8 (depends on 1)

The power semiconductor module according to claim 1, wherein
the first metal member is made of Al, and
the second metal member is made of AlSi, AlCu, AlSiCu, or Cu.

### Claim 9 (depends on 1)

A power conversion apparatus comprising:
a main conversion circuit including the power semiconductor module according to claim 1, wherein the main conversion circuit converts input power and outputs the converted power; and
a control circuit to output, to the main conversion circuit, a control signal for controlling the main conversion circuit.