# US 11,908,769 B2 · Superlattice structures for thermoelectric devices

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 11,908,769 B2
- Document ID: US11908769B2
- Status: Granted
- Kind: B2
- Application number: 17/132,640
- Filed: 2020-12-23
- Published: 2021-05-20
- Granted: 2024-02-20
- Earliest claimed: 2016-11-11
- Assignees: The Johns Hopkins University
- Applicants: The Johns Hopkins University
- Inventors: Rama Venkatasubramanian; Jonathan M. Pierce; Geza Dezsi
- Web page: https://patentgrep.com/patent/US11908769B2

## CPC

- H10W 40/28: comprising Peltier coolers
- H10N 10/01: Manufacture or treatment
- H10N 10/13: characterised by the heat-exchanging means at the junction
- H10N 10/17: characterised by the structure or configuration of the cell or thermocouple forming the device
- H10N 10/81: Structural details of the junction
- H10N 10/852: comprising tellurium, selenium or sulfur
- H10H 20/8584: {electrically controlled, e.g. Peltier elements}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

Example superlattice structures and methods for thermoelectric devices are provided. An example structure may include a plurality of superlattice periods. Each superlattice period may include a first material layer disposed adjacent to a second material layer. For each superlattice period, the first material layer may be formed of a first material and the second material layer may be formed of a second material. The plurality of superlattice periods may include a first superlattice period and a second superlattice period. A thickness of a first material layer of the first superlattice period may be different than a thickness of a first material layer of the second superlattice period.

## Claims

### Claim 1

A thin-film structure comprising:
a plurality of superlattice periods, each superlattice period comprising a first material layer disposed adjacent to a second material layer;
wherein the plurality of superlattice periods comprises:
a first superlattice period wherein a thickness of a first material layer of the first superlattice period is x and a thickness of a second material layer of the first superlattice period is 3x;
a second superlattice period disposed adjacent the first superlattice period, wherein a thickness of a first material layer of the second superlattice period is x and a thickness of a second material layer of the second superlattice period is 4x;
a third superlattice period disposed adjacent the second superlattice period, wherein a thickness of a first material layer of the third superlattice period is x and a thickness of a second material layer of the third superlattice period is 5x;
a fourth superlattice period disposed adjacent the third superlattice period, wherein a thickness of a first material layer of the fourth superlattice period is x and a thickness of a second material layer of the fourth superlattice period is 6x; and
a fifth superlattice period disposed adjacent the fourth superlattice period, wherein a thickness of a first material layer of the fifth superlattice period is x and a thickness of a second material layer of the fifth superlattice period is 7x.

### Claim 2 (depends on 1)

The thin-film structure of claim 1, wherein, for each superlattice period, the first material layer is Bi2Te3.

### Claim 3 (depends on 1)

The thin-film structure of claim 1, wherein, for each superlattice period, the second material layer is Sb2Te3 or Bi2Te3-xSex.

### Claim 4 (depends on 1)

The thin-film structure of claim 1, wherein, for each superlattice period, the first material layer and the second material layer are periodic table Group IV-VI compounds.

### Claim 5 (depends on 1)

The thin-film structure of claim 1, wherein, for each superlattice period, the first material layer and the second material layer are doped to be n-type semiconductor materials.

### Claim 6 (depends on 1)

The thin-film structure of claim 1, wherein, for each superlattice period, the first material layer and the second material layer are doped to be p-type semiconductor materials.

### Claim 7 (depends on 1)

The thin-film structure of claim 1, wherein the plurality of superlattice periods is a first plurality of superlattice periods;
wherein the thin-film structure comprises a first band comprising the first plurality of superlattice periods and a second band comprising a second plurality of superlattice periods;
wherein the first band is adjacent to the second band; and
wherein the first plurality of superlattice periods of the first band and second plurality of superlattice periods of the second band have a same arrangement and thicknesses of material layers.

### Claim 8 (depends on 1)

The thin-film structure of claim 1, wherein the thin-film structure is part of a thermoelectric leg further comprising a bandgap gradient along the thermoelectric leg.

### Claim 9 (depends on 1)

The thin-film structure of claim 1, wherein the thin-film structure is part of a thermoelectric leg further comprising a doping gradient along the thermoelectric leg.

### Claim 10 (depends on 1)

The thin-film structure of claim 1, wherein the thin-film structure is a component of a cooler device configured to perform thermal control, thermal sensing, or energy harvesting in an electronic device, an optoelectronic device, a photonic device, a computing device, a radio frequency device, ef-a biological platform, a micro-electro-mechanical system (MEMS), a battery system, or a sensor device.