# US 11,908,765 B2 · Semiconductor structure with heating element > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,908,765 B2 - Document ID: US11908765B2 - Status: Granted - Kind: B2 - Application number: 17/853,924 - Filed: 2022-06-30 - Published: 2022-10-20 - Granted: 2024-02-20 - Earliest claimed: 2019-12-11 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company, Ltd. - Inventors: Chih-Tsung Shih; Chewn-Pu Jou; Stefan Rusu; Feng-Wei Kuo - Web page: https://patentgrep.com/patent/US11908765B2 ## CPC - H10D 62/117: {Shapes of semiconductor bodies} - H10W 40/10: Arrangements for heating - G02F 1/0147: {based on thermo-optic effects (G02F1/132 takes precedence)} - G02F 1/015: based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction (G02F1/03 takes precedence) - H10D 8/50: PIN diodes - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS ## Abstract A semiconductor structure includes a semiconductor substrate, a semiconductor device and a heating structure. The semiconductor substrate includes a device region and a heating region surrounding the device region. The semiconductor device is located on the device region. The heating structure is located on the heating region and includes an intrinsic semiconductor area, at least one heating element and at least one heating pad. The intrinsic semiconductor area is surrounding the semiconductor device. The at least one heating element is located at a periphery of the intrinsic semiconductor area. The at least one heating pad is joined with the at least one heating element, wherein the at least one heating pad includes a plurality of contact structures, and a voltage is supplied from the plurality of contact structures to control a temperature of the at least one heating element. ## Claims ### Claim 1 A structure, comprising: a substrate; a semiconductor device disposed on the substrate, wherein the semiconductor device comprises a first doped region, an intermediate region located within an area surrounded by the first doped region, and a second doped region located within an area surrounded by the first doped region and the intermediate region, and the first doped region and the second doped region have opposite conductivity types; a heating structure surrounding the semiconductor device, wherein the heating structure comprises: an intrinsic semiconductor area, wherein the semiconductor device is located within an area surrounded by the intrinsic semiconductor area, and the intrinsic semiconductor area is physically separated from the intermediate region by the first doped region; at least one heating element located at a periphery of the intrinsic semiconductor area; and at least one heating pad joined with the at least one heating element, wherein the at least one heating pad comprises a plurality of contact structures, and the contact structures are arranged to receive a voltage to control a temperature of the at least on heating element. ### Claim 2 (depends on 1) The structure according to claim 1, wherein the semiconductor device further comprises a first trench located in between the second doped region and the intermediate region, and a second trench located in between the intermediate region and the first doped region. ### Claim 3 (depends on 1) The structure according to claim 1, wherein the intrinsic semiconductor area is in contact with the first doped region of the semiconductor device located on the device region and separated from the intermediate region and the second doped region. ### Claim 4 (depends on 1) The structure according to claim 1, wherein the at least one heating element is a circular heating element, and the semiconductor device is located within an area surrounded by the circular heating element, and the at least one heating pad is joined with the circular heating element. ### Claim 5 (depends on 1) The structure according to claim 1, wherein the at least on heating pad has a curved surface that is joined with a curved surface of the at least one heating element. ### Claim 6 (depends on 1) The structure according to claim 1, wherein the at least one heating pad comprises a first portion and a second portion joined with the first portion, and a width of the first portion is smaller than a width of the second portion, the first portion is joined with the at least one heating element and the second portion comprises the plurality of contact structures. ### Claim 7 (depends on 1) The structure according to claim 1, further comprising a conductive pad located over and electrically connected to the at least one heating pad. ### Claim 8 (depends on 1) The structure according to claim 1, wherein a thickness of the at least one heating element is greater than a thickness of the semiconductor device. ### Claim 9 A structure, comprising: an insulating layer disposed on a substrate; a semiconductor device located on the insulating layer; an intrinsic semiconductor area surrounding the semiconductor device; at least one heating element surrounding the intrinsic semiconductor area, wherein the at least one heating element is a heavily doped region of a first conductivity type, and the intrinsic semiconductor area is sandwiched between the at least one heating element and the semiconductor device, and a distance between the at least one heating element and a boundary surface of the semiconductor device is smaller than half of a maximum width of the semiconductor device; a plurality of heating pads joined with the at least one heating element; and a voltage supplier connected to the plurality of heating pads, wherein the voltage supplier controls a temperature of the plurality of heating pads. ### Claim 10 (depends on 9) The structure according to claim 9, wherein the semiconductor device comprises a rib structure, a N-doped region and a P-doped region located at two opposite sides of the rib structure, and either one of the N-doped region and the P-doped region is in contact with the intrinsic semiconductor area. ### Claim 11 (depends on 10) The structure according to claim 10, wherein the intrinsic semiconductor area is located in between the heavily doped region of the at least one heating element and a doped region of a second conductivity type of the semiconductor device, and the doped region of the second conductivity type is the N-doped region or the P-doped region. ### Claim 12 (depends on 9) The structure according to claim 9, wherein the semiconductor device is a circular semiconductor device, and the distance between the at least one heating element and a boundary surface of the circular semiconductor device is smaller than a radius of the circular semiconductor device. ### Claim 13 (depends on 9) The structure according to claim 9, wherein the plurality of heating pads is conformally disposed around and in contact with a peripheral surface of the at least one heating element. ### Claim 14 (depends on 13) The structure according to claim 13, wherein the peripheral surface of the at least one heating element is a curved surface. ### Claim 15 (depends on 9) The structure according to claim 9, wherein a top surface of the at least one heating element is non-aligned with a top surface of the semiconductor device. ### Claim 16 A structure, comprising: a semiconductive material layer comprising an intrinsic semiconductor area and a semiconductor device located within an area surrounded by the intrinsic semiconductor area; a heating element surrounding the intrinsic semiconductor area; a first heating pad joined with the heating element, and located on a first side of the semiconductor device; a second heating pad joined with the heating element, and located on a second side of the semiconductor device, wherein the second side is opposite to the first side; and a third heating pad joined with the heating element, and located on a third side of the semiconductor device, wherein the third side is adjacent to the first side. ### Claim 17 (depends on 16) The structure according to claim 16, further comprising a fourth heating pad joined with the heating element, and located on a fourth side of the semiconductor device, wherein the fourth side is opposite to the third side. ### Claim 18 (depends on 16) The structure according to claim 16, wherein the heating element is a circular heating element, and the first heating pad, the second heating pad and the third heating pad are joined with the circular heating element. ### Claim 19 (depends on 16) The structure according to claim 16, wherein the semiconductor device is a micro-ring modulator or a Mach-Zehnder device. ### Claim 20 (depends on 16) The structure according to claim 16, wherein a material of the heating element comprises doped silicon, copper or tantalum nitride.