# US 11,908,755 B2 · Semiconductor devices and methods of manufacturing semiconductor devices

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- Number: US 11,908,755 B2
- Document ID: US11908755B2
- Status: Granted
- Kind: B2
- Application number: 16/797,307
- Filed: 2020-02-21
- Published: 2021-08-26
- Granted: 2024-02-20
- Earliest claimed: 2020-02-21
- Assignees: Amkor Technology Singapore Holding Pte. Ltd.
- Applicants: Amkor Technology Singapore Holding Pte. Ltd.
- Inventors: Sang Jae Jang; Weilung Lu; Burt Barber; Adrian Arcedera; Shingo Nakamura
- Web page: https://patentgrep.com/patent/US11908755B2

## CPC

- H10W 76/13: Containers comprising a conductive base serving as an interconnection
- H10W 70/65: Shapes or dispositions of interconnections
- H10W 72/071: {Connecting or disconnecting}
- H10W 74/117: {the substrate having spherical bumps for external connection}
- H10W 74/121: {by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation}
- H10W 74/131: {the semiconductor body being only partially enclosed}
- H10W 76/12: characterised by their shape
- H10W 76/153: having interconnections in passages through the insulating or insulated base
- H10W 76/17: characterised by their materials
- H10W 76/40: Fillings or auxiliary members in containers, e.g. centering rings (fillings or auxiliary members for thermal protection or control in containers or encapsulations H10W40/70)
- H10W 76/60: Seals
- H10W 95/00: Packaging processes not covered by the other groups of this subclass
- H10W 72/01515: {Forming coatings}
- H10W 72/075: {of bond wires}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

In one example, a semiconductor device comprises a substrate comprising a top side, a bottom side, and a conductive structure, a body over the top side of the substrate, an electronic component over the top side of the substrate and adjacent to the body, wherein the electronic component comprises an interface element on a top side of the electronic component, a lid over the interface element and a seal between the top side of the electronic component and the lid, and a buffer on the top side of the substrate between the electronic component and the body. Other examples and related methods are also disclosed herein.

## Claims

### Claim 1

A semiconductor device, comprising:
a substrate comprising a top side, a bottom side, and a conductive structure, wherein the conductive structure comprises a horizontal trace between the top side and the bottom side of the substrate;
a body over the top side of the substrate;
an electronic component over the top side of the substrate and adjacent to the body, wherein the electronic component comprises an interface element on a top side of the electronic component;
a lid over the interface element and a seal between the top side of the electronic component and the lid;
a buffer on the top side of the substrate between the electronic component and the body; and
a protection film over the lid, the buffer, and the body, wherein the protection film contacts the buffer;
wherein:
an internal interconnect is in the buffer;
the internal interconnect is external to the body and the seal; and
the seal does not contact the interface element.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the electronic component comprises a component terminal, and wherein the internal interconnect is electrically coupled with the component terminal and the conductive structure of the substrate.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the buffer contacts the seal and the body.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the buffer and the seal each comprise a different material.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the buffer and the seal each comprise a same, continuous material.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, wherein the seal comprises a translucent material that covers the interface element.

### Claim 7 (depends on 1)

The semiconductor device of claim 1, wherein the buffer contacts the protection film.

### Claim 8 (depends on 1)

The semiconductor device of claim 1, wherein the body is between the buffer and the protection film.

### Claim 9 (depends on 1)

The semiconductor device of claim 1, wherein the buffer contacts a corner of the lid.

### Claim 10 (depends on 1)

The semiconductor device of claim 1, wherein the buffer contacts a lateral side of the lid.

### Claim 11

A method, comprising:
providing a substrate comprising a top side, a bottom side, and a conductive structure;
providing an electronic component over the top side of the substrate, wherein the electronic component comprises an interface element and a component terminal on the top side of the electronic component;
providing an internal interconnect electrically coupling the interface element and the conductive structure;
providing a lid over the interface element and seal between the top side of the electronic component and the lid; and
providing a body over the top side of the substrate;
wherein a buffer is provided before the lid is provided and before the body is provided, the seal is between the interface element and the buffer, and the interface element is free of the buffer.

### Claim 12 (depends on 11)

The method of claim 11, wherein the buffer is provided over a top side of the electronic component and contacting a lateral side of the lid.

### Claim 13 (depends on 11)

The method of claim 11, further comprising providing a protection film over the lid and over the body, wherein the protection film is over the body and contacts the buffer.

### Claim 14

A semiconductor device, comprising:
a substrate comprising a top side, a bottom side, and a conductive structure;
an electronic component over the top side of the substrate, wherein the electronic component comprises an interface element and a component terminal on a top side of the electronic component;
an internal interconnect electrically coupled to the component terminal and the conductive structure;
a lid over the interface element;
a seal between the top side of the electronic component and the lid; and
a body over the top side of the substrate;
wherein the body contacts a lateral side of the lid, the component terminal is in the seal, and the internal interconnect is in the body; and
wherein the seal does not contact the interface element.

### Claim 15 (depends on 14)

The semiconductor device of claim 14, wherein the seal comprises a buffer material contacting a lateral side of the lid and the component terminal is in the buffer material.

### Claim 16

A semiconductor device, comprising:
a substrate comprising a top side, a bottom side, and a conductive structure;
a body over the top side of the substrate;
an electronic component over the top side of the substrate and adjacent to the body, wherein the electronic component comprises an interface element on a top side of the electronic component;
a lid over the interface element and a seal between the top side of the electronic component and the lid;
a buffer on the top side of the substrate between the electronic component and the body; and
a protection film over the lid, the buffer, and the body;
wherein the protection film is discrete from the body.

### Claim 17 (depends on 16)

The semiconductor device of claim 16, wherein the buffer contacts the protection film.

### Claim 18 (depends on 16)

The semiconductor device of claim 16, wherein the body is between the buffer and the protection film.