# US 11,908,732 B2 · Alternating spacers for pitch structure

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- Number: US 11,908,732 B2
- Document ID: US11908732B2
- Status: Granted
- Kind: B2
- Application number: 17/475,829
- Filed: 2021-09-15
- Published: 2023-03-16
- Granted: 2024-02-20
- Earliest claimed: 2021-09-15
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Hsueh-Chung Chen; Chanro Park; Koichi Motoyama
- Web page: https://patentgrep.com/patent/US11908732B2

## CPC

- H10W 20/089: {using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning}
- G03F 1/38: Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- H10P 50/695: {characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask}
- H10P 50/696: {Process specially adapted to improve the resolution of the mask}
- H10P 50/71: {using masks for conductive or resistive materials}
- H10P 76/4085: {characterised by the processes involved to create the masks}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method of forming a pitch pattern is provided. The method includes forming two adjacent mandrels separated by a first distance, D1, on a substrate, and forming a first set of alternating sidewall spacers between the two adjacent mandrels. The method further includes removing the two adjacent mandrels, and forming a second set of alternating sidewall spacers and a third set of alternating sidewall spacers on opposite sides of the first set of sidewall spacers.

## Claims

### Claim 1

A method of forming a pitch pattern, comprising:
forming two adjacent mandrels separated by a first distance, D1, on a substrate;
forming a first set of alternating sidewall spacers between the two adjacent mandrels;
removing the two adjacent mandrels;
forming a second set of alternating sidewall spacers after removing the two adjacent mandrels; and
forming a third set of alternating sidewall spacers on opposite sides of the first set of sidewall spacers.

### Claim 2 (depends on 1)

The method of claim 1, wherein the second set of sidewall spacers and the third set of sidewall spacers each have the same width as the first set of sidewall spacers.

### Claim 3 (depends on 1)

The method of claim 1, wherein the second set of sidewall spacers and the third set of sidewall spacers are formed together by the same sequence of deposition processes.

### Claim 4 (depends on 1)

The method of claim 1, wherein the two adjacent mandrels each have the same width in a range of about 3 nanometers (nm) to about 120 nm.

### Claim 5 (depends on 1)

The method of claim 1, wherein the first distance, D1, separating the two adjacent mandrels is in a range of about 3 nanometers (nm) to about 120 nm.

### Claim 6 (depends on 1)

The method of claim 1, wherein the first set of alternating sidewall spacers include an odd number of individual sidewall spacers.

### Claim 7 (depends on 6)

The method of claim 6, wherein each of the individual sidewall spacers have a width in a range of about 0.5 nm to about 20 nm.

### Claim 8 (depends on 6)

The method of claim 6, wherein a first subset of the individual sidewall spacers is made of a different material from a second subset of the individual sidewall spacers.

### Claim 9 (depends on 8)

The method of claim 8, wherein the material of the first subset of the individual sidewall spacers and the material of the second subset of the individual sidewall spacers are both different from a material of the two adjacent mandrels.

### Claim 10

A method of forming a pitch pattern, comprising:
forming two adjacent mandrels separated by a first distance, D1, on a substrate;
forming a first sidewall spacer on opposite sides of each of the two adjacent mandrels, wherein the first sidewall spacers are made of a first material;
removing the two adjacent mandrels;
forming a second sidewall spacer adjoining each of the first sidewall spacers after the removing the two adjacent mandrels, where the second sidewall spacers are made of a second material different from the first material;
forming a third sidewall spacer adjoining each of the second sidewall spacers, where the third sidewall spacers are made of the first material; and
forming a fourth sidewall spacer adjoining each of the third sidewall spacers, where the fourth sidewall spacers are made of the second material.

### Claim 11 (depends on 10)

The method of claim 10, further comprising removing the two adjacent mandrels.

### Claim 12 (depends on 11)

The method of claim 11, further comprising forming a fifth sidewall spacer on each of the first sidewall spacers.

### Claim 13 (depends on 10)

The method of claim 10, wherein the first distance, D1, separating the two adjacent mandrels is in a range of about 3 nanometers (nm) to about 120 nm.

### Claim 14 (depends on 13)

The method of claim 13, wherein the two adjacent mandrels each have the same width in a range of about 3 nanometers (nm) to about 120 nm.

### Claim 15 (depends on 14)

The method of claim 14, wherein each of the first, second, third and fourth sidewall spacers have a width in a range of about 0.5 nm to about 20 nm.