# US 11,908,716 B2 · Image-based in-situ process monitoring

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 11,908,716 B2
- Document ID: US11908716B2
- Status: Granted
- Kind: B2
- Application number: 17/321,366
- Filed: 2021-05-14
- Published: 2022-11-17
- Granted: 2024-02-20
- Earliest claimed: 2021-05-14
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Guoheng Zhao; Venkatakaushik Voleti; Todd Egan; Kyle R. Tantiwong; Andreas Schulze; Niranjan Ramchandra Khasgiwale; Mehdi Vaez-Iravani
- Web page: https://patentgrep.com/patent/US11908716B2

## CPC

- H10P 72/0432: {mainly by conduction}
- H10P 72/0604: {Process monitoring, e.g. flow or thickness monitoring}
- C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)}
- G01N 21/55: Specular reflectivity
- H01J 37/32577: {Electrical connecting means}
- H01J 37/32917: {Plasma diagnostics}
- H01J 37/32935: {Monitoring and controlling tubes by information coming from the object and/or discharge}
- H01J 37/32972: {Spectral analysis}
- H10P 72/0421: {for drying etching}
- H10P 72/72: using electrostatic chucks
- H10P 72/7626: {characterised by the construction of the shaft}
- H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects}
- H10P 74/23: {characterised by multiple measurements, corrections, marking or sorting processes}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

Methods and systems for monitoring etch or deposition processes using image-based in-situ process monitoring techniques include illuminating a measurement area on a sample disposed in a process chamber. The measurement area is illuminated using an input beam generated remote from the process chamber and transmitted to a first viewing window of the process chamber by a first optical fiber. Portions of the first input beam reflected from the measurement area are transmitted from the first viewing window to an imaging sensor by a second optical fiber. A sequence of images is obtained at the imaging sensor, and a change in reflectance of pixels within each of the images is determined. The etch or deposition process is monitored based on the change in reflectance.

## Claims

### Claim 1

A method for monitoring an etch or deposition process using image-based in-situ process monitoring, the method comprising:
illuminating a measurement area on a sample disposed in a process chamber using a first input beam of electromagnetic radiation having a first peak wavelength, the first input beam generated remote from the process chamber and transmitted to at least part of an objective lens system by a first optical fiber, the objective lens system being telecentric, broadband, diffraction limited, and spectrally parfocalized, and the objective lens system disposed adjacent to a first viewing window of the process chamber, the first viewing window disposed on a lid or side of the process chamber and being transparent to allow viewing of the sample during processing;
receiving portions of the first input beam reflected from the measurement area at an imaging sensor, the imaging sensor configured to capture images of the measurement area on the sample, the portions of the first input beam reflected from the measurement area received as a first reflected beam, the first reflected beam transmitted from the objective lens system to the imaging sensor by a second optical fiber;
obtaining a sequence of first images of the measurement area using the first reflected beam received at the imaging sensor, each of the first images obtained at a different time within a monitoring period, and each of the first images comprising first pixels corresponding to different parts of the measurement area;
determining a first reflectance of one or more of the first pixels within each of the first images, the one or more of the first pixels corresponding to areas of interest within the measurement area;
determining a first change in the reflectance of the one or more of the first pixels between adjacent first images in the sequence; and
monitoring the etch or deposition process based on the first change in the reflectance.

### Claim 2 (depends on 1)

The method of claim 1 further comprising:
illuminating the measurement area on the sample disposed in the process chamber using a second input beam having a second peak wavelength different from the first peak wavelength, the second input beam generated remote from the process chamber and transmitted to the objective lens system by the first optical fiber;
receiving portions of the second input beam reflected from the measurement area at the imaging sensor as a second reflected beam, the second reflected beam transmitted from the objective lens system to the imaging sensor by the second optical fiber;
obtaining a sequence of second images of the measurement area using the second reflected beam received at the imaging sensor, each of the second images obtained at a different time within the monitoring period, and each of the images comprising second pixels corresponding to different parts of the measurement area;
determining a second reflectance of one or more of the second pixels within each of the second images, the one or more of the second pixels corresponding to the areas of interest within the measurement area;
determining a second change in the reflectance of the one or more of the second pixels between adjacent second images in the sequence; and
monitoring the etch or deposition process based on the first change in the reflectance and the second change in reflectance.

### Claim 3 (depends on 1)

The method of claim 1 wherein the first optical fiber and the second optical fiber are separate optical fibers.

### Claim 4 (depends on 1)

The method of claim 1 wherein the first optical fiber and the second optical fiber use a same fiber-optic image conduit.

### Claim 5 (depends on 1)

The method of claim 1 wherein the second optical fiber is a coherent or imaging fiber bundle configured to preserve a relative position of individual fibers between input and output faces of the second optical fiber.

### Claim 6 (depends on 1)

The method of claim 1 wherein the one or more of the first pixels form the areas of interest within the measurement area, and the etch or deposition process is monitored based on the change in the reflectance across the areas of interest.

### Claim 7 (depends on 1)

The method of claim 1 wherein the process chamber includes one or more additional viewing windows, and for each viewing window, the method further comprises illuminating another measurement area on the sample disposed in the process chamber using another input beam generated remote from the process chamber and transmitted to another viewing window of the process chamber by another optical fiber.

### Claim 8 (depends on 1)

The method of claim 1 wherein the first optical fiber is a first optical fiber bundle, and the second optical fiber is a second coherent or imaging optical fiber bundle.

### Claim 9

A processing system comprising:
a processing chamber having a viewing window disposed in a lid or side thereof, the viewing window being transparent to allow viewing of a sample during processing;
an imaging system comprising:
an illuminator source configured to generate electromagnetic radiation to illuminate a measurement area on the sample;
an imaging sensor configured to capture images of the measurement area on the sample;
an objective lens system disposed adjacent to the viewing window, wherein the objective lens system is telecentric, broadband, diffraction limited, and spectrally parfocalized;
a first optical fiber configured to transmit the electromagnetic radiation from the illumination source to at least part of the objective lens system for illumination of the measurement area on the sample;
a second optical fiber configured to transmit the images from the objective lens system to the imaging sensor; and
a controller configured to monitor an etch or deposition by performing steps comprising:
illuminating the measurement area on a sample using an input beam generated by the illumination source and transmitted to the objective lens system by the first optical fiber;
receiving portions of the input beam reflected from the measurement area at the imaging sensor as a reflected beam, the reflected beam transmitted from the objective lens system to the imaging sensor by the second optical fiber;
obtaining the images of the measurement area using the reflected beam received at the imaging sensor, each of the images obtained at a different time within a monitoring period, and each of the images comprising pixels corresponding to different parts of the measurement area;
determining a reflectance of one or more of the pixels within each of the images, the one or more of the pixels corresponding to areas of interest within the measurement area;
determining a change in the reflectance of the one or more of the pixels between adjacent ones of the images; and
monitoring the etch or deposition process based on the change in the reflectance.

### Claim 10 (depends on 9)

The processing system of claim 9 wherein the first optical fiber and the second optical fiber are separate optical fibers.

### Claim 11 (depends on 9)

The processing system of claim 9 wherein the first optical fiber and the second optical fiber use a same fiber-optic image conduit.

### Claim 12 (depends on 9)

The processing system of claim 9 wherein the second optical fiber is a coherent or imaging fiber bundle configured to preserve a relative position of individual fibers between input and output faces of the second optical fiber.

### Claim 13 (depends on 9)

The processing system of claim 9 wherein the first optical fiber is a first optical fiber bundle, and the second optical fiber is a second coherent or imaging optical fiber bundle.

### Claim 14 (depends on 9)

The processing system of claim 9 wherein the process chamber includes one or more additional viewing windows, and for each viewing window, the controller is further configured to monitor the etch or deposition process by performing steps comprising illuminating another measurement area on the sample disposed in the process chamber using another input beam generated remote from the process chamber and transmitted to another viewing window of the process chamber by another optical fiber.