# US 11,908,715 B2 · Dynamic temperature control of substrate support in substrate processing system

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- Number: US 11,908,715 B2
- Document ID: US11908715B2
- Status: Granted
- Kind: B2
- Application number: 17/256,677
- Filed: 2019-07-02
- Published: 2021-09-02
- Granted: 2024-02-20
- Earliest claimed: 2018-07-05
- Assignees: Lam Research Corporation
- Applicants: Lam Research Corporation
- Inventors: Sairam Sundaram; Aaron Durbin; Ramesh Chandrasekharan
- Web page: https://patentgrep.com/patent/US11908715B2

## CPC

- C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices}
- H10P 72/0602: {Temperature monitoring}
- C23C 14/50: Substrate holders
- C23C 14/541: {Heating or cooling of the substrates}
- C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence)
- C23C 16/463: {Cooling of the substrate}
- C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)}
- H01J 37/32724: {Temperature}
- H05B 1/0233: {for semiconductors manufacturing}
- H10P 72/0432: {mainly by conduction}
- H10P 72/7604: {the wafers being placed on a susceptor, stage or support}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL

## Abstract

A temperature-controlled substrate support for a substrate processing system includes a substrate support located in the processing chamber. The substrate support includes N zones and N resistive heaters, respectively, where N is an integer greater than one. A temperature sensor is located in one of the N zones. A controller is configured to calculate N resistances of the N resistive heaters during operation and to adjust power to N−1 of the N resistive heaters during operation of the substrate processing system in response to the temperature measured in the one of the N zones by the temperature sensor, the N resistances of the N resistive heaters, and N−1 resistance ratios.

## Claims

### Claim 1

A temperature-controlled substrate support for a substrate processing system comprising:
a substrate support including N zones and N resistive heaters, respectively, where N is an integer greater than one, and a temperature sensor located in one of the N zones; and
a controller configured to:
calculate N resistances of the N resistive heaters during operation; and
adjust power to N−1 of the N resistive heaters during operation of the substrate processing system in response to:
the temperature measured in the one of the N zones by the temperature sensor;
the N resistances of the N resistive heaters; and
N−1 resistance ratios.

### Claim 2 (depends on 1)

The temperature-controlled substrate support of claim 1, wherein the N−1 resistance ratios are determined by measuring the N resistances of the N resistive heaters in the N zones, respectively, when the substrate support is at a uniform temperature and dividing N−1 of the N resistances of N−1 of the N zones by one of the N resistances corresponding to the one of the N zones.

### Claim 3 (depends on 2)

The temperature-controlled substrate support of claim 2, wherein the uniform temperature corresponds to ambient temperature.

### Claim 4 (depends on 1)

The temperature-controlled substrate support of claim 1, wherein the N−1 zones do not include temperature sensors.

### Claim 5 (depends on 1)

The temperature-controlled substrate support of claim 1, wherein the controller calculates the N resistances of the N resistive heaters during operation by:
monitoring N voltages supplied to the N resistive heaters, respectively; and
calculating the N resistances based on the N voltages supplied to the N resistive heaters, respectively.

### Claim 6 (depends on 1)

The temperature-controlled substrate support of claim 1, wherein the controller calculates the N resistances of the N resistive heaters during operation by:
monitoring N currents supplied to the N resistive heaters, respectively; and
calculating the N resistances based on the N currents supplied to the N resistive heaters, respectively.

### Claim 7 (depends on 1)

The temperature-controlled substrate support of claim 1, wherein the controller calculates the N resistances of the N resistive heaters during operation by:
monitoring N currents and N voltages supplied to the N resistive heaters, respectively; and
calculating the N resistances based on the N currents and the N voltages supplied to the N resistive heaters, respectively.

### Claim 8 (depends on 1)

The temperature-controlled substrate support of claim 1, wherein the controller is configured to control power to the one of the N zones based on the temperature measured by the temperature sensor.

### Claim 9

A method of manufacturing a temperature-controlled substrate support for a substrate processing system, comprising:
embedding N resistive heaters in N zones of a substrate support;
embedding a temperature sensor in one of the N zones of the substrate support;
measuring N resistances of the N resistive heaters in the N zones of the substrate support;
determining N−1 resistance ratios based on the N resistances;
connecting a controller to the N resistive heaters and the temperature sensor; and
programming the controller to control temperature in N−1 of the N resistive heaters in N−1 of the N zones, respectively, during operation of the substrate processing system in response to:
a measured temperature in the one of the N zones;
the N resistances of the N resistive heaters; and
the N−1 resistance ratios.

### Claim 10 (depends on 9)

The method of claim 9, wherein the N−1 resistance ratios are calculated by:
determining the N resistances of the N resistive heaters, respectively, when the substrate support is at a uniform temperature; and
dividing the N−1 of the N resistances of the N−1 of the N zones by one of the N resistances corresponding to the one of the N zones.

### Claim 11 (depends on 10)

The method of claim 10, wherein the uniform temperature corresponds to ambient temperature.

### Claim 12 (depends on 9)

The method of claim 9, wherein the N−1 of the N zones do not include temperature sensors.

### Claim 13 (depends on 9)

The method of claim 9, wherein measuring the N resistances of the N resistive heaters includes:
monitoring N voltages supplied to the N resistive heaters, respectively; and
calculating the N resistances based on the N voltages supplied to the N resistive heaters, respectively.

### Claim 14 (depends on 9)

The method of claim 9, wherein measuring the N resistances of the N zones includes:
monitoring N currents supplied to the N resistive heaters, respectively; and
calculating the N resistances based on the N currents supplied to the N resistive heaters, respectively.

### Claim 15 (depends on 9)

The method of claim 9, wherein measuring the N resistances of the N zones during operation includes:
monitoring N currents and N voltages supplied to N resistive heaters, respectively; and
calculating the N resistances based on the N currents and the N voltages supplied to the N resistive heaters, respectively.

### Claim 16

A method for controlling temperatures of zones in a substrate support of a substrate processing system, comprising:
measuring temperature in one of N zones of a substrate support during operation of the substrate processing system using a temperature sensor located in the one of the N zones, where N is an integer greater than one;
measuring N resistances of N resistive heaters located in the N zones, respectively, during operation of the substrate processing system; and
adjusting power to N−1 of the N resistive heaters in N−1 of the N zones, respectively, during operation of the substrate processing system to control temperatures in N−1 of the N zones in response to:
the measured temperature in the one of the N zones;
the N resistances of the N resistive heaters; and
N−1 resistance ratios.

### Claim 17 (depends on 16)

The method of claim 16, wherein the N−1 resistance ratios are calculated by:
determining the N resistances of the N resistive heaters, respectively, when the substrate support is at a uniform temperature; and
dividing N−1 of the N resistances of N−1 of the N zones by one of the N resistances corresponding to the one of the N zones.

### Claim 18 (depends on 17)

The method of claim 17, wherein the uniform temperature corresponds to ambient temperature.

### Claim 19 (depends on 16)

The method of claim 16, wherein the N−1 of the N zones do not include temperature sensors.

### Claim 20 (depends on 16)

The method of claim 16, wherein measuring the N resistances of the N resistive heaters includes:
monitoring N voltages supplied to the N resistive heaters, respectively; and
calculating the N resistances based on the N voltages supplied to the N resistive heaters, respectively.

### Claim 21 (depends on 16)

The method of claim 16, wherein measuring the N resistances of the N zones includes:
monitoring N currents supplied to the N resistive heaters, respectively; and
calculating the N resistances based on the N currents supplied to the N resistive heaters, respectively.

### Claim 22 (depends on 16)

The method of claim 16, wherein measuring the N resistances of the N zones during operation includes:
monitoring N currents and N voltages supplied to N resistive heaters, respectively; and
calculating the N resistances based on the N currents and the N voltages supplied to the N resistive heaters, respectively.

### Claim 23 (depends on 16)

The method of claim 16, further comprising controlling power to the one of the N zones based on the temperature measured by the temperature sensor.