# US 11,908,708 B2 · Laser de-bonding carriers and composite carriers thereof

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 11,908,708 B2
- Document ID: US11908708B2
- Status: Granted
- Kind: B2
- Application number: 17/479,467
- Filed: 2021-09-20
- Published: 2022-12-22
- Granted: 2024-02-20
- Earliest claimed: 2021-06-17
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Huicheng Chang; Jyh-Cherng Sheu; Chen-Fong Tsai; Yun Chen Teng; Han-De Chen; Yee-Chia Yeo
- Web page: https://patentgrep.com/patent/US11908708B2

## CPC

- H10P 72/74: {using temporarily an auxiliary support}
- H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)}
- H10W 74/014: {using batch processing}
- H10W 74/117: {the substrate having spherical bumps for external connection}
- H10W 80/00: Direct bonding of chips, wafers or substrates
- H10W 90/00: Package configurations
- H10P 72/744: {Details of chemical or physical process used for separating the auxiliary support from a device or a wafer}
- H10W 72/00: Interconnections or connectors in packages
- H10W 72/01204: {using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates}
- H10W 72/242: {relative to the surface, e.g. recessed, protruding}
- H10W 72/244: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W 90/20: Configurations of stacked chips
- H10W 90/291: {characterised by containers, encapsulations, or other housings for the stacked chips}
- H10W 90/297: {characterised by the through-semiconductor vias [TSVs] in the stacked chips}
- H10W 90/792: {between multiple chips}
- H10W 99/00: Subject matter not provided for in other groups of this subclass
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method includes bonding a package component to a composite carrier. The composite carrier includes a base carrier and an absorption layer, and the absorption layer is between the base carrier and the package component. A laser beam is projected onto the composite carrier. The laser beam penetrates through the base carrier to ablate the absorption layer. The base carrier may then be separated from the package component.

## Claims

### Claim 1

A method comprising:
bonding a package component to a composite carrier, wherein the composite carrier comprises:
a base carrier; and
an absorption layer, wherein the absorption layer is between the base carrier and the package component, and wherein the absorption layer comprises a titanium nitride layer;
projecting a laser beam onto the composite carrier, wherein the laser beam penetrates through the base carrier to ablate the absorption layer; and
separating the base carrier from the package component.

### Claim 2 (depends on 1)

The method of claim 1, wherein the composite carrier further comprises a reflection layer between the absorption layer and the package component, and wherein the reflection layer reflects the laser beam back to the absorption layer.

### Claim 3 (depends on 1)

The method of claim 1, wherein the absorption layer further comprises a metal layer contacting the titanium nitride layer.

### Claim 4 (depends on 3)

The method of claim 3, wherein the absorption layer comprises a TiN/Ti/TiN composite layer.

### Claim 5 (depends on 1)

The method of claim 1, wherein the laser beam has a wavelength in a range between about 1,800 nm and about 2,200 nm.

### Claim 6 (depends on 1)

The method of claim 1, wherein the base carrier comprises a first silicon substrate, and the package component comprise a second silicon substrate.

### Claim 7 (depends on 1)

The method of claim 1 further comprising:
encapsulating the package component in a gap-filling material, wherein the package component comprises a first device die;
bonding a second device die to the first device die, wherein the laser beam is projected after the second device die is bonded; and
after the base carrier is separated from the package component, performing a singulation process to form a package, wherein the first device die and the second device die are in the package.

### Claim 8 (depends on 1)

The method of claim 1, wherein the bonding the package component to the composite carrier comprises fusion bonding.

### Claim 9

A structure comprising:
a composite carrier comprising:
a silicon substrate;
a transparent layer;
an absorption layer over the transparent layer, wherein the absorption layer comprises titanium; and
a bond layer over the absorption layer, wherein an entirety of each of the transparent layer, the absorption layer, and the bond layer is a planar layer.

### Claim 10 (depends on 9)

The structure of claim 9, wherein the transparent layer comprises silicon oxide, and the absorption layer comprises a metal.

### Claim 11 (depends on 10)

The structure of claim 10, wherein the absorption layer comprises titanium.

### Claim 12 (depends on 10)

The structure of claim 10, wherein the absorption layer comprises titanium nitride.

### Claim 13 (depends on 10)

The structure of claim 10, wherein the absorption layer comprises a composite layer comprising:
a first titanium nitride layer;
a titanium layer over the first titanium nitride layer; and
a second titanium nitride layer over the titanium layer.

### Claim 14 (depends on 9)

The structure of claim 9 further comprising:
a pad layer over the absorption layer; and
a reflection layer over the pad layer, wherein the pad layer and the reflection layer are between the bond layer and the absorption layer.

### Claim 15 (depends on 9)

The structure of claim 9 further comprising:
a device die bonding to the composite carrier, wherein the device die comprises an additional bond layer bonding to the bond layer through fusion bonding.

### Claim 16

A structure configured to be de-bonded by a laser beam, the structure comprising:
a base carrier, wherein an entirety of the base carrier is formed of a homogeneous material, and wherein the base carrier is transparent to the laser beam;
a metal-containing absorption layer over the base carrier, wherein the metal-containing absorption layer is configured to absorb the laser beam;
a metal-containing reflection layer over the metal-containing absorption layer, wherein the metal-containing reflection layer is configured to reflect the laser beam; and
a bond layer over the metal-containing reflection layer.

### Claim 17 (depends on 16)

The structure of claim 16, wherein the metal-containing absorption layer comprises a first titanium nitride layer.

### Claim 18 (depends on 17)

The structure of claim 17, wherein the metal-containing absorption layer comprises a titanium layer and a second titanium nitride layer, wherein the titanium layer is between and physically contacting the first titanium nitride layer and the second titanium nitride layer.

### Claim 19 (depends on 17)

The structure of claim 17, wherein the metal-containing reflection layer comprises aluminum, silver, or gold.

### Claim 20 (depends on 2)

The method of claim 2, wherein the reflection layer comprises aluminum or copper.