Method for manufacturing semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsNai-Han Cheng, Chi-Ming Yang
Life of this patent
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Abstract
In some embodiments of the present disclosure, a method of manufacturing a semiconductor structure includes the following operations. A substrate including a first atom and a second atom is provided. An etchant is dispatched from an ionizer. A compound is formed over the substrate by bonding the first atom with the etchant. A particle is released from an implanter. The compound is removed by bombarding the compound with the particle having an energy smaller than a bonding energy between the first atom and the second atom, wherein the particle is different from the etchant.
Claims20
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate comprising a first atom and a second atom;
- dispatching an etchant from an ionizer;
- forming a compound over the substrate by bonding the first atom with the etchant;
- releasing a particle from an implanter;
- and
- removing the compound by bombarding the compound with the particle having an energy smaller than a bonding energy between the first atom and the second atom, wherein the etchant and the particle comprise different ions.
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate comprising a plurality of first atoms in a first layer and a plurality of second atoms in a second layer;
- dispatching a plurality of first particles from an ionizer;
- forming a plurality of compounds by bonding the plurality of first atoms with the plurality of first particles;
- releasing a plurality of second particles from an implanter;
- and
- removing the plurality of compounds by bombarding the plurality of compounds with the plurality of second particles having an energy smaller than a bonding energy between each of the plurality of second atoms,
- wherein the first particles and the second particles comprise different ions.
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate;
- disposing a patterned layer over the substrate, wherein a plurality of first atoms of the substrate is exposed through the patterned layer, and a plurality of second atoms of the substrate is covered by the patterned layer;
- bonding the plurality of first atoms with a plurality of reactive ions to form a plurality of compounds;
- and
- removing the plurality of compounds by bombarding the plurality of compounds with a plurality of particles having an energy smaller than a bonding energy between each of the plurality of second atoms, wherein the reactive ions and the particles comprise different ions.
Dependencies are inferred from the claim text.