# US 11,908,690 B2 · Multi-layered semiconductive device and methodology with polymer and transition metal dichalcogenide material

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- Number: US 11,908,690 B2
- Document ID: US11908690B2
- Status: Granted
- Kind: B2
- Application number: 17/619,514
- Filed: 2020-06-19
- Published: 2022-08-04
- Granted: 2024-02-20
- Earliest claimed: 2019-06-20
- Assignees: The Board of Trustees of the Leland Stanford Junior University
- Applicants: The Board of Trustees of the Leland Stanford Junior University
- Inventors: Alwin S. Daus; Sam Vaziri; Eric Pop
- Web page: https://patentgrep.com/patent/US11908690B2

## CPC

- H10P 14/3436: {being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds}
- H10P 95/11: {Separation of active layers from substrates}
- H10D 30/481: {FETs having two-dimensional material channels, e.g. transition metal dichalcogenide [TMD] FETs}
- H10D 30/675: {Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium}
- H10D 62/883: {Transition metal dichalcogenides, e.g. MoSe2}
- H10D 64/01: Manufacture or treatment
- H10D 64/258: {characterised by the relative positions of the source or drain electrodes with respect to the gate electrode}
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers}
- H10D 62/121: {oriented parallel to substrates}
- H10D 64/251: {Source or drain electrodes for field-effect devices}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

In certain examples, methods and semiconductor structures are directed to multilayered structures including TMD (transition metal dichalcogenide material or TMD-like material and a polymer-based layer which is characterized as exhibiting flexibility. A first layer including a TMD-based material (e.g., an atomic-thick layer including TMD) or TMD-like material is provided or grown on a surface which in certain instances may be a rigid platform or substrate. A plurality of electrodes are provided on or as part of the first layer, and another layer or film including polymer is applied to cover the first layer and the electrodes. The other layer is integrated with the TMD material or TMD-like material and the first layer, and the other layer provides a flexible substrate such as when released from the exemplary rigid platform or substrate.

## Claims

### Claim 1

A method for manufacturing a semiconductor device, the method comprising:
on a surface, forming a first layer having TMD (transition metal dichalcogenide) material and being characterized at least in part by a transparency metric that is limited by a transparency characteristic that is associated with at least one of the TMD material and a second layer that is integrated with the TMD material and the first layer;
forming a plurality of electrodes on or as part of the first layer; and
applying the second layer, including a polymer, to cover the first layer and the plurality of electrodes, and wherein the second layer provides a flexible substrate.

### Claim 2 (depends on 1)

The method of claim 1, wherein the semiconductor device includes a field effect transistor (FET) and the electrodes are source/drain electrodes of the FET, the method further including forming a channel associated with the FET.

### Claim 3 (depends on 2)

The method of claim 2, wherein forming the channel includes patterning the channel using reactive ion etching.

### Claim 4 (depends on 1)

The method of claim 1, wherein forming the electrodes includes patterning using lithography.

### Claim 5 (depends on 1)

The method of claim 1, wherein forming the electrodes includes deposition by e-beam evaporation and/or sputtering.

### Claim 6 (depends on 1)

The method of claim 1, wherein forming the electrodes includes atomic-layer deposition.

### Claim 7 (depends on 1)

The method of claim 1, wherein the TMD material of the first layer is at least predominantly composed of at least one type of TMD.

### Claim 8 (depends on 1)

The method of claim 1, wherein the surface is part of a rigid substrate from which the second layer is released.

### Claim 9 (depends on 1)

The method of claim 1, wherein the TMD material of the first layer is characterized by having or exhibiting a high carrier mobility within a range from 10 cm2V−1s−1 to 200 cm2 V−1s−1.

### Claim 10 (depends on 1)

The method of claim 1, wherein a structure, representing the second layer integrated with the first layer, the polymer, the TMD material and the electrodes, is characterized by a flexibility bending radius metric in a range from 10 mm to 100 micrometers.

### Claim 11 (depends on 1)

The method of claim 1, wherein the semiconductor device includes a field effect transistor (FET), the method further including forming a channel being associated with the FET and having a channel length dimension within a range of 10 micrometer to 1 nanometer.

### Claim 12 (depends on 1)

The method of claim 1, wherein the semiconductor device includes a field effect transistor (FET), the method further including forming a channel being associated with the FET and having a channel length dimension within a 20 micrometer to 1 nanometer.

### Claim 13 (depends on 1)

The method of claim 1, wherein the TMD material includes one of among, or a combination from among, the following: WSe2, MoSe2, MoS2, WS2, InSe and MoTe, silicon, black phosphorus, carbon nanotubes, and graphene, wherein each of WSe2, MoSe2, MoS2, WS2, InSe and MoTe is a TMD.

### Claim 14 (depends on 1)

The method of claim 1, further including releasing or separating the second layer integrated with the TMD material and the first layer, from the surface, through application of one of, or a combination from among the following: deionized water, an acid that does not abrade or destroy a portion of the first layer when applied, and a base that does not abrade or destroy a portion of the first layer when applied.

### Claim 15 (depends on 1)

The method of claim 1, further including providing a dielectric layer between the first layer and the second layer.

### Claim 16 (depends on 1)

The method of claim 1, wherein the first and second layers provide a degree of transparency which is set relative to a conductivity attribute of the semiconductor device.

### Claim 17

A method for manufacturing a semiconductor device, the method comprising:
forming a first layer having TMD (transition metal dichalcogenide) material and being characterized at least in part by a transparency metric;
integrating a plurality of electrodes with the first layer; and
applying a second layer to cover the first layer and the plurality of electrodes, wherein the second layer includes a polymer, is integrated with the TMD material and the first layer and provides a flexible substrate, and the semiconductor device is an optical electronic device adapted to pass or manipulate light, and the transparency metric is limited by a transparency characteristic that is associated with at least one of the TMD material and the second layer.

### Claim 18

An apparatus including a semiconductor device, the apparatus comprising:
a surface having thereon a first layer including TMD (transition metal dichalcogenide) material and being characterized at least in part by a transparency metric that is limited by a transparency characteristic associated with at least one of the TMD material and a second layer which includes polymer;
a plurality of electrodes formed on or as part of the first layer; and
the second layer being over the first layer and the plurality of electrodes, and being integrated with the TMD material and the first layer and providing a flexible substrate.

### Claim 19 (depends on 18)

The apparatus of claim 18, wherein the surface is part of a rigid foundation and any bonds between the surface and the flexible substrate are releasable or separable from the flexible substrate by application of a substance that does not abrade or destroy a portion of the first layer when applied, and wherein the apparatus characterizes formation of the semiconductor device before being completely manufactured.

### Claim 20 (depends on 18)

The apparatus of claim 18, wherein the surface is part of a rigid foundation and any bonds between the surface and the flexible substrate are releasable or separable from the flexible substrate by application of a substance that does not abrade or destroy a portion of the first layer when applied.

### Claim 21 (depends on 18)

The apparatus of claim 18, wherein the semiconductor device includes or is part of a device including the flexible substrate, and wherein the device includes at least one of a combination of: a solar cell; an opto-electronic device other than a solar cell; a memory device; a photo detector; a temperature sensor; and a bio sensor configured to sense changes in a biological substance.

### Claim 22 (depends on 18)

The apparatus of claim 18, wherein the semiconductor device includes a field-effect transistor having the electrodes corresponding to source/drain contacts adjacent to the TMD material and having a transistor gate, and the TMD material includes a two-atom-thick or three-atom-thick layer of MoS2.

### Claim 23 (depends on 18)

The apparatus of claim 18, wherein the semiconductor device is adapted to pass light or manipulate light.