# US 11,908,684 B2 · Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method

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- Number: US 11,908,684 B2
- Document ID: US11908684B2
- Status: Granted
- Kind: B2
- Application number: 17/944,583
- Filed: 2022-09-14
- Published: 2023-01-05
- Granted: 2024-02-20
- Earliest claimed: 2019-06-11
- Assignees: ASM IP Holding B.V.
- Applicants: ASM IP Holding B.V.
- Inventors: Shinya Yoshimoto; Jun Yoshikawa; Toshihisa Nozawa
- Web page: https://patentgrep.com/patent/US11908684B2

## CPC

- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10D 64/0112: {using conductive layers comprising silicides}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/6532: {by exposure to a plasma}
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 72/7612: {characterised by lifting arrangements, e.g. lift pins}
- H10W 20/076: {in via holes or trenches}
- H10W 20/096: {by contacting with gases, liquids or plasmas}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.

## Claims

### Claim 1

A method of forming an electronic device structure, the method comprising:
providing a substrate on a susceptor within a reaction chamber, the substrate having features thereon and comprising a layer comprising silicon nitride overlying the features;
providing a pole-type antenna above the susceptor, the pole-type antenna extending across two sides of the reaction chamber and positioned parallel to the susceptor;
forming activated species by irradiating a reforming gas with microwave radiation emitted from the pole-type antenna; and
exposing the layer comprising silicon nitride to the activated species.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the reforming gas comprises hydrogen and one or more of helium and argon.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the reforming gas comprises hydrogen and helium.

### Claim 4 (depends on 1)

The method according to claim 1, wherein the reforming gas comprises a nitrogen source gas.

### Claim 5 (depends on 4)

The method according to claim 4, wherein the nitrogen source gas is selected from one or more of the group consisting of N2 and NH3.

### Claim 6 (depends on 1)

The method according to claim 1, wherein the reforming gas consists essentially of hydrogen, a nitrogen source gas, and one or more of helium and argon.

### Claim 7 (depends on 1)

The method according to claim 1, wherein the reforming gas comprises about 5% to about 95% by volume of He.

### Claim 8 (depends on 1)

The method according to claim 1, wherein the reforming gas comprises about 20% to about 70% by volume of He.

### Claim 9 (depends on 1)

The method according to claim 1, wherein the pole-type antenna is enclosed in a tube, the tube comprising quartz or ceramic.

### Claim 10 (depends on 1)

The method according to claim 1, wherein the reforming gas comprises about 40% to about 60% by volume of H.

### Claim 11 (depends on 1)

The method according to claim 1, wherein the reforming gas comprises greater than 0% and less than 10% by volume of nitrogen source gas.

### Claim 12 (depends on 1)

The method according to claim 1, further comprising providing at least one additional pole-type antenna above the susceptor, wherein the pole-type antennas are provided parallel to each other.

### Claim 13 (depends on 1)

The method according to claim 1, wherein the microwave radiation has a frequency of about 800 MHz to about 10 GHz.

### Claim 14 (depends on 1)

The method according to claim 1, wherein a microwave power emitting the microwave radiation is between about 500 W and about 10,000 W.

### Claim 15 (depends on 1)

The method according to claim 1, wherein the pole-type antenna is provided at a distance of about 5 cm to about 10 cm from the susceptor.

### Claim 16 (depends on 1)

The method according to claim 1, wherein no RF power is supplied to the susceptor during the step of forming activated species.

### Claim 17 (depends on 1)

The method according to claim 1, wherein the pressure within the reaction chamber during the step of forming activated species is between about 1 Pa and about 50 Pa.

### Claim 18 (depends on 1)

The method according to claim 1, wherein a temperature of a susceptor within the reaction chamber during the step of forming activated species is between about 20° C. and about 400° C.

### Claim 19 (depends on 1)

The method according to claim 1, further comprising a step of depositing the silicon nitride film on the substrate by plasma-enhanced atomic layer deposition (PE-ALD) in a PE-ALD apparatus, and then transferring the substrate to a reaction space in a microwave plasma apparatus without exposing the substrate to air.

### Claim 20 (depends on 1)

A system for performing the method of claim 1.