# US 11,908,683 B2 · Manufacturing method for silicon nitride thin film, thin film transistor and display panel

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- Number: US 11,908,683 B2
- Document ID: US11908683B2
- Status: Granted
- Kind: B2
- Application number: 17/344,995
- Filed: 2021-06-11
- Published: 2022-03-17
- Granted: 2024-02-20
- Earliest claimed: 2020-09-14
- Assignees: Beihai Hkc Optoelectronics Technology Co., Ltd.; Hkc Corporation Limited
- Applicants: Beihai HKC Optoelectronics Technology Co., Ltd.; HKC Corporation Limited
- Inventors: En-Tsung Cho; Wanfei Yong; Je-Hao Hsu; Yuming Xia; Haijiang Yuan
- Web page: https://patentgrep.com/patent/US11908683B2

## CPC

- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)}
- H10D 30/67: Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/60: wherein the TFTs are in active matrices
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- G02F 2201/50: Protective arrangements
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The present application discloses a manufacturing method of a silicon nitride thin film, a thin film transistor and a display panel, the method includes following steps: providing a silane precursor into an atomic layer deposition apparatus for a preset time period, and remaining the silane precursor for a preset time period after the provision; providing an inert gas into the atomic layer deposition apparatus for a preset time period for the first time, and purging the silane precursor; providing a nitrogen supplying precursor into the atomic layer deposition apparatus for a preset time period, and remaining the nitrogen supplying precursor for a preset time period after the provision; providing the inert gas into the atomic layer deposition apparatus for a preset time period for the second time, and purging the nitrogen supplying precursor; repeating for a preset number of times the steps of providing the silane precursor, providing the inert gas for the first time, providing the nitrogen supplying precursor and providing the inert gas for the second time to form the silicon nitride thin film.

## Claims

### Claim 1

A manufacturing method for forming a passivation layer of a thin film transistor, the passivation layer comprising a first silicon nitride layer, a second silicon nitride layer formed on the first silicon nitride layer, and a third silicon nitride layer formed on the second silicon nitride layer, wherein an etching rate of the first silicon nitride layer is less than etching rates of the second silicon nitride layer and the third silicon nitride layer, the manufacturing method comprising:
providing a silane precursor into an atomic layer deposition apparatus for a preset time period, and allowing the silane precursor to remain in the atomic deposition apparatus for a preset time period after the providing;
providing an inert gas into the atomic layer deposition apparatus for a preset time period for the first time, and purging the silane precursor;
providing a nitrogen supplying precursor into the atomic layer deposition apparatus for a preset time period, and allowing the nitrogen supplying precursor to remain in the atomic deposition apparatus for a preset time period after the providing;
providing the inert gas into the atomic layer deposition apparatus for a preset time period for the second time, and purging the nitrogen supplying precursor; and
repeating for a preset number of times the steps of providing the silane precursor, providing the inert gas for the first time, providing the nitrogen supplying precursor and providing the inert gas for the second time to form the first silicon nitride layer, the second silicon nitride layer, and the third silicon nitride layer successively, wherein the first silicon nitride layer, the second silicon nitride layer, and the third silicon nitride layer collectively constitute a silicon nitride thin film.

### Claim 2 (depends on 1)

The manufacturing method for the silicon nitride thin film according to claim 1, wherein the preset time period for which the silane precursor is continuously provided is 0.01 to 0.03 seconds, and the preset time period for which the silane precursor remains after the providing is 0.02 to 0.04 seconds.

### Claim 3 (depends on 1)

The manufacturing method for the silicon nitride thin film according to claim 1, wherein the preset time period for which the inert gas is continuously purged in the step of providing the inert gas for the first time is 2 to 10 seconds; and the preset time period for which the inert gas is continuously purged in the step of providing the inert gas for the second time is 15 to 25 seconds.

### Claim 4 (depends on 1)

The manufacturing method for the silicon nitride thin film according to claim 1, wherein the preset time period for which the nitrogen supplying precursor is continuously provided is 3 to 8 seconds, and the preset time period for which the nitrogen supplying precursor remains after the providing is 15 to 25 seconds.

### Claim 5 (depends on 1)

The manufacturing method for the silicon nitride thin film according to claim 1, wherein the preset number of times of repeating the steps of providing the silane precursor, providing the inert gas for the first time, providing the nitrogen supplying precursor and providing the inert gas for the second time is 400 to 600.

### Claim 6 (depends on 1)

The manufacturing method for the silicon nitride thin film according to claim 1, wherein comprising steps of:
providing the silane precursor into the atomic layer deposition apparatus for 0.02 seconds, and allowing the silane precursor to remain in the atomic deposition apparatus for 0.03 seconds;
providing the inert gas into the atomic layer deposition apparatus for 5 seconds for the first time;
providing the nitrogen supplying precursor into the atomic layer deposition apparatus for 5 seconds, and allowing the nitrogen supplying precursor to remain in the atomic deposition apparatus for 20 seconds;
providing the inert gas into the atomic layer deposition apparatus for 20 seconds for the second time; and
repeating for 500 times the steps of providing the silane precursor, providing the inert gas for the first time, providing the nitrogen supplying precursor and providing the inert gas for the second time to form the each of the first silicon nitride layer, the second silicon nitride layer, and the third silicon nitride layer.

### Claim 7 (depends on 1)

The manufacturing method for the silicon nitride thin film according to claim 1, wherein the silane precursor comprises [NH(C4H9)]2SiH2.

### Claim 8 (depends on 1)

The manufacturing method for the silicon nitride thin film according to claim 1, wherein the inert gas comprises argon.

### Claim 9 (depends on 1)

The manufacturing method for the silicon nitride thin film according to claim 1, wherein the silicon nitride thin film is formed by an atomic layer deposition method.

### Claim 10 (depends on 1)

The manufacturing method according to claim 1, wherein the first silicon nitride layer is formed of SiNx1, the second silicon nitride layer is formed of SiNx2, and the third silicon nitride layer is formed of SiNx3, wherein the value of the shown x1 is greater than that of x2 and x3.

### Claim 11 (depends on 10)

The manufacturing method according to claim 10, wherein a value of x1 ranges from 1.21 to 1.31, a value of x2 ranges from 1.1 to 1.2, and a value of x3 ranges from 1.0 to 1.2.

### Claim 12 (depends on 1)

The manufacturing method according to claim 1, wherein in forming the first silicon nitride layer thin film, N2 is used as a nitrogen supplying precursor; in forming the second silicon nitride layer thin film, NH3 is used as a nitrogen supplying precursor; and in forming the third silicon nitride layer thin film, N2+NH3 is used as a nitrogen supplying precursor.